Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films |
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| Authors: | Liu Yao-Ping Ying Min-Ju Mei Zeng-Xi Li Jun-Qiang Du Xiao-Long and A Yu Kuznetsov |
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| Institution: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway |
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| Abstract: | In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb + implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead. |
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| Keywords: | ZnO ion implantation Raman spectra molecular beam epitaxy |
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