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In this article, we reported near-field research on azobenzene polymer liquid crystal films using scanning near-field optical microscopy (SNOM). Optical writing and subsequently topographic reading of the patterns with subwavelength resolution were carried out in our experiments. Nanometer scale dots and lines were successfully fabricated on the films and the smallest dot diameter is about 120 nm. The width of the line fabricated is about 250 nm. This method is also a choice for nanolithography. The mechanism of the surface deformation on the polymer films was briefly analyzed from the viewpoint of gradient force in the optical near field. The intensity distribution of the electric field near the tip aperture was numerically simulated using finite-difference time-domain (FDTD) method and the numerical simulation results were consistent with the experimental results. 相似文献
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Optical-quality films of a few μm thickness are a basic re- quirement for integrated optics[1-3]. Since such films are thick by normal coating standards, a number of special- ized methods have been developed to form them. The sol-gel processing is one approach because of the high optical quality of materials produced and freedom to im- pregnate them with a variety of additives to modify their optical characteristics. It is a popular and widespread technique for preparing coating films in labo… 相似文献
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A photonic crystal fibre (PCF) surface enhanced Raman scattering (SERS) sensor is developed based on silver nanoparticle colloid. Analyte solution and silver nanoparticles are injected into the air holes of PCF by a simple modified syringe to overcome mass-transport constraints, allowing more silver nanoparticles involved in SERS activity. This sensor offers significant benefit over the conventional SERS sensor with high flexibility, easy manufacture. We demonstrate the detection of 4-mercaptobenzoic acid (4-MBA ) molecules with the injecting way and the common dipping measurement. The injecting way shows obviously better results than the dipping one. Theoretical analysis indicates that this PCF SERS substrate offers enhancement of about 7 orders of magnitude in SERS active area. 相似文献
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A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes. 相似文献
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