MgB_2超导电性的发现及新一轮高临界温度超导研究热潮

20 0 1年 1月 10日 ,在日本召开的学术会议上 ,AoyamaGakuin大学的J.Akimitsu教授宣布MgB2 显现超导电性 (Tc=39K) .紧接着的一系列研究工作表明 ,MgB2 属于BCS超导体 .这些发现引起了新一轮高临界温度超导研究热潮     

超巨磁电阻材料Pr2/3Sr1/3MnO3薄膜输运性质的研究

对1/f噪声缺口的超巨磁电阻Pr_2/3Sr_1/3MnO₃薄膜样品从10K到室温的热电势值进行了测量，热电势为负值，低温下随温度线性变化，表现为金属扩散热电势，在150K开始急剧减小，过渡到与温度T成反比的变化关系，与小极化子模型相符.结合在电阻极大温度附近对电阻和1/f噪声行为的讨论，对于发生在电阻极大温度附近的相变过程，结果支持源于相分离的渝渗模型. 关键词： 稀土锰氧化物 热电势 渝渗模型     

激光淀积YBa2Cu3O7外延超导薄膜

利用准分子脉冲激光成功地在(100)SrTiO_3与(100)Y-ZrO_2衬底上淀积了 YBa_2Cu_3O_7超导薄膜,T_c(R=0)>90K,J_c(T<82K)>1×10~6A/cm~2.研究了衬底温度对外延YBa_2Cu_3O_7薄膜超导性能及结构的影响.     

一种反常的小样品超导转变曲线

本文介绍了我们在用电阻法测量小样品T_c时获得的一种反常超导转变曲线,并对造成这种超导转变曲线畸变的原因做了分析.     

La0.5Sr0.5CoO3薄膜的外延生长及其电性能的研究

系统研究了在LaAlO3,SrTiO3和MgO衬底上、在不同的温度条件下利用脉冲激光法制备的La0.5Sr0.5CoO3薄膜的外延生长和电输运特性,测定了薄膜的电阻-温度关系.研究表明薄膜的电输运性质对其外延结构具有密切的依赖性,外延生长的薄膜具有低的电阻率和金属性导电特征;在LaAlO3衬底上在700℃左右外延生长的薄膜具有最佳的性能;探讨了这一薄膜的外延生长与其电输运性能的关系及其机理.     

HgBCO和PrBCO的正常态的1/f噪声研究

在１００ ～３００Ｋ温度范围内测量了Ｈｇ１２１２ 相块材和薄膜样品的正常态的１／ｆ 噪声,结果显示高质量薄膜的噪声水平为１０４ 量级,已和ＹＢＣＯ 外延膜及单晶相近．还测量了ＰｒＢａ２Ｃｕ３Ｏ７ － δ（ＰｒＢＣＯ） 微桥样品１／ｆ 噪声的尺寸依赖性,发现在ａｂ 面上,存在着与涨落相关的特征尺度,约为１０２μｍ 的量级．样品宽度降到该尺寸以下时,噪声水平急剧下降．在两个体系中,实验结果均和ＤｕｔｔａＨｏｒｎ 热激活模型进行了比较．     

La0.5Sr0.5CoO3薄膜的外延生长及其机理研究

利用脉冲激光制膜法,在多种衬底和温度条件下,系统研究了La_0.5Sr_0.5CoO₃(LSCO)薄膜的结构和外延生长特性,在LaAlO₃,SrTiO₃和MgO衬底上实现了LSCO薄膜的外延生长.外延生长的薄膜具有低的电阻率和金属性导电特征.研究表明,外延生长的最佳温度范围为700—800℃,最佳衬底为LaAlO₃.并着重探讨了衬底材料和淀积温度等多种因素对LSCO薄膜的生长与性 关键词：     

Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices

Charge carrier injection is performed in Pr0.7Ca0.3MnO3 （PCMO） hetero-structure junctions, exhibiting the stability without electric fields and dramatic changes in both resistance and interface barriers, which are entirely different from behaviour of semiconductor devices. The disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hetero-strueture oxide devices should associate with motion of charge carriers across interfaces. The results suggest that injected carriers should be still staying in devices and result in changes of properties, which lead to a carrier self-trapping and releasing picture in a strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2-δ devices show that oxides as functional materials could be used in mieroeleetronics with some novel properties, in which the interface is very important.     

Relationship of Polaron Exchange with Ferromagnetic and Insulator--Metal Transitions in Doped Manganites

We report the experiment results and data analyses based on a polaron exchange model for La0.7Ca0.3MnO3 and Pr0.7（Sr1-xCax）0.3MnO3 epitaxial thin films. In the polaron exchange model with an energy balance condition, critical temperature of Tc for stable ferromagnetic （FM） ordering should depend on △E as kBTc = E0 exp（-△E/kBTc）, where A E denotes the potential barrier for the exchange polarons to overcome. Using the small polaron hopping model, the resistivity peak temperature Tp is a function of the hopping energy Ehop. The dependence of Tp on Ehop is similar to the dependence of Tc on AE, which reveals that the polaron exchange relates to FM and insulator-metal transitions. The result indicates that the polaron exchange model is a simple way for describing the FM ordering, and is very helpful for understanding of complex doped manganites.     

Fantastic Behaviour of High-TC Superconductor Junctions: Tunable Superconductivity

Carrier injection performed in oxygen-deficient YBa2 Cu307_~ （YBCO） hetero-structure junctions exhibits tunable resistance that is entirely different from the behaviour of semiconductor devices. Tunable superconductivity in YBCO junctions, increasing over 20 K in transition temperature, has achieved by using electric processes. To our knowledge, this is the first observation that intrinsic property of high Tc superconductors＇ superconductivity can be adjusted as tunable functional parameters of devices. The fantastic phenomenon caused by carrier injection is discussed based on a proposed charge carrier seff-trapping model and BCS theorv.