Superconductivity of bilayer titanium/indium thin film grown on SiO_2/Si(001)

Bilayer superconducting films with tunable transition temperature(Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium(Ti/In) bilayer superconducting films are successfully fabricated on SiO_2/Si(001)substrates by molecular beam epitaxy(MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to-150?C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 m K to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.     

纳米Cu固体材料微结构的正电子湮没研究

纳米材料的性能不仅与纳米晶粒本身的结构有关,而且与纳米晶体之间界面的微观结构有关.纳米粉在压实成纳米块过程中很难消除微孔洞,并且在压实过程中也会给晶粒引入结构缺陷.本文用正电子湮没谱学研究了纳米Cu固体材料微结构,发现在两种不同条件下压制成型的纳米Cu固体内部的晶粒界面均存在着单空位及空位团等缺陷.空位团的大小随着压制压力的增加而略有减小.通过退火实验发现纳米Cu固体的界面缺陷具有较好的热稳定性.即使在900℃高温下退火也只能使部分缺陷得到恢复,但是低压力下压制的样品中的缺陷恢复需要更高的温度.     

Neutralization process of Xe^q＋ ion grazing on Al（111） surface

A code has been developed to simulate the neutralization and grazing process of slow highly charged ion Xe^q＋ on Al（111） surface under the classical-over-the-barrier model. The image energy gain of Xeq＋ ions are calculated and compared with experiment data. The simulation results of image energy gain are in good agreement with the experiment data. Meanwhile, in the present work, the reflection coefficient of incident Xe^q＋ on Al（111） surface as a function of the incidence angle, energy and charge state is also studied.     

MoO3/Al2O3催化剂中Mo分散的正电子研究

用浸渍法制备了一系列不同Mo含量的MoO3/Al2O3催化剂.测量了这些样品的正电子湮没寿命谱(PALS)与符合多普勒展宽(CDB)谱,以研究其孔洞结构以及Mo分散.正电子寿命测量结果表明,Al2O3载体中存在两种不同尺寸的孔洞.掺入MoO3之后,Mo原子主要进入Al2O3的大孔中,使孔洞体积减小.符合多普勒展宽谱结果表明,当MoO3的质量含量仅为3%时,多普勒展宽谱即发生了显著的改变.这表明Mo已分散至Al2O3的孔洞中,使得正电子测量所得到的电子动量分布发生改变.在MoO3含量达到18%之后,Al2O3中大孔的体积减小到尺寸与小孔相当,此后正电子寿命和多普勒展宽谱不再随MoO3含量变化,表明Mo分散逐渐达到饱和.     

MoO3/Al2O3催化剂中Mo分散的正电子研究

用浸渍法制备了一系列不同Mo含量的MoO₃/Al₂O₃催化剂.测量了这些样品的正电子湮没寿命谱(PALS)与符合多普勒展宽(CDB)谱,以研究其孔洞结构以及Mo分散.正电子寿命测量结果表明,Al₂O₃载体中存在两种不同尺寸的孔洞.掺入MoO₃之后,Mo原子主要进入Al₂O₃的大孔中,使孔洞体积减小.符合多普勒展宽谱结果表明,当MoO 关键词： 3/Al₂O₃催化剂')" href="#">MoO₃/Al₂O₃催化剂 正电子湮没寿命谱 符合多普勒展宽 Mo 分散     

Design,fabrication, and characterization of Ti/Au transition-edge sensor with different dimensions of suspended beams

For photon detection, superconducting transition-edge sensor (TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3D deformation of suspended Ti/Au TES device structure, I-V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I-V characteristics of the devices. For devices with the Ti/Au bilayer (150μm×150μm) and beams (100μm×25μm), the transition temperature (T_c) is 253 mK with a width of 6 mK, and the value of the temperature sensitivity α is 95.1.     

被动法高浓铀年龄测量技术研究

利用HPGe-γ谱仪测量了多个年龄段的HEU样品, 获得了样品中N(214Bi)/N(234U)的值, 从而计算得到了HEU的年龄,其测量结果与参考值吻合较好。最后结合实验结果,系统分析了其它可能用于测量高浓铀年龄的方法,并对各种方法的可行性进行了分析。 结果表明, 214Bi/234U比值法是最佳的选择。N(231Pa)/N(235U)法中对γ谱如何解谱还需作进一步研究。 The HEU sample was measured by HPGe- γ spectrometry. By analyzing the detected γ spectrum, the N(214Bi)/N(234U) of the HEU sample was acquired, and the age of HEU samples was determined, which was coincided with the reference value. At last, the other potential methods of determining the age of HEU were analyzed systematically. N(214Bi)/N(234U) is more feasible,and algorithm of spectrum decomposition in N(231Pa)/N(235U) should be studied further.     

氧化法制备ZnO薄膜中缺陷结构的慢正电子束表征

用脉冲激光沉积方法在Al2O3（0001）衬底上制备了Zn薄膜,并在空气中氧化得到了ZnO薄膜.利用Raman光谱测量了氧化法制备的薄膜,并与ZnO单晶材料进行比较,证实了ZnO薄膜的形成.采用慢正电子束技术对ZnO薄膜的微观结构进行了研究,发现在薄膜中存在大量的空位型缺陷.当氧化后的薄膜在高温下退火后,缺陷浓度逐渐降低,在达到900℃时,所制备的ZnO薄膜中缺陷基本得到消除.