具身学习视角下的教学环节再思考——以“全等三角形判定”第1课时为例

《义务教育数学课程标准(2011年版)》(以下简称《课标》)指出,数学教学活动,特别是课堂教学应激发学生兴趣,调动学生积极性,引发学生的数学思考,鼓励学生的创造性思维.这就要求教师在设计教学环节时,以学生经验为逻辑起点,以学生经验生长为目的,重视学生的多感官参与,拒绝单一的听中学,创设环节帮助学生体悟学习过程,关注学生的学习过程,具身学习正是通过身体的感觉运动系统与周围环境的互动,促使学习者的认知、心理和情感水平发生变化,为我们提供了一个引导学生学习方式转型的新视角。     

利用沉积物和水体的环境DNA检测鱼类物种多样性的差异

环境DNA(environmental DNA,eDNA)调查因其敏感且能提供高分辨率的群落组成数据,正越来越多地被用于生物多样性的监测。但环境DNA研究评估不同的环境样本类型如何影响物种的可检测性仍然很少。在此,我们利用线粒体细胞色素b基因的环境DNA宏条形码比较了鄱阳湖中沉积物和水体的鱼类群落组成。结果显示:沉积物样本注释到6目10科18种,水体样本中注释到5目7科13种。沉积物和水体环境DNA共同注释到8种鱼类(32%)。本研究注释到的鱼以鲤科鱼类居多,且以小型、湖泊定居型、杂食性鱼类为主。沉积物样本中检测到的鱼类的多样性高于水体中的。鱼类环境DNA有垂直分布差异。本研究得出结论,在进行环境DNA调查时需要仔细考虑环境样本类型。建议在使用环境DNA进行鱼类资源研究时,取样策略采取沉积物样本和水体样本相结合将会更有意义。     

柔性双咪唑配体导向的Co(Ⅱ)⁃戊二酸金属有机骨架材料的合成、结构和性能

在水热条件下合成并表征了2例基于柔性配体构筑的Co(Ⅱ)-MOFs:{[Co(glu)(bimb)]·4H2O}n (1),[Co(glu)(bix)0.5]n (2)(H2glu=戊二酸;bimb=1,4-双(咪唑-1-基)-丁烷;bix=1,4-双(咪唑-1-基-亚甲基)-苯)。配合物1显示非穿插的(4,4)-菱形网格,通过层间氢键和π…π作用拓展为三维超分子结构。加热失水后1的结构不可逆地降解。配合物2呈现典型的柱-层状三维结构,其拓扑符号为41263,中心Co(Ⅱ)离子采用四方锥构型。此外,性质研究表明:配合物1在水溶液中对染料甲基橙具有显著的吸附活性,配合物2表现出弱的反铁磁行为。     

AM/AA/APEG/NANB共聚物的合成与性能研究

通过丙烯酰胺(AM),丙烯酸(AA),烯丙醇聚氧乙烯醚(APEG)和N,N-二烯丙基苄胺(NANB)制备共聚物P(AM/AA/APEG/NANB)。确定了最佳反应条件:m(AM)∶m(AA)=6.5∶3,APEG为5 wt%,NANB加量0.2 wt%,pH为7,反应温度40℃,引发剂0.4 wt%。通过IR和1H NMR确定了聚合物的分子结构,并对其进行性能测试。结果表明:2000 mg·L-1的AM/AA/APEG/NANB溶液具有较好的流变性能(120℃,粘度保留率:38.56%;1000 s-1,粘度保留率:17.93%)和抗盐性能(20 000 mg·L-1Na Cl,2000 mg·L-1Mg Cl2或Ca Cl2,粘度保留率分别为22.14%、18.34%和15.33%),且提高采收率可达16.12%。     

用胞映射方法讨论GKDV方程全局吸引域

本文用胞映射方法画出了GKDV方程未受扰系统和受扰系统的全局吸引域、r步吸引域。     

THEORY OF NON-PROPAGATION SOLITONS INCLUDING SURFACE-TENSION EFFECTS

In this paper, the surface-tension effects to non-propagating solitons is studied. Thusthe Larraza and Putterman’s theory has (?) modified. It is found that the surface-tensionmakes the frequency range of crosswise oscillation of solitions larger, the amplitude higherand the width smaller. When the surfactension coefficient is equal to zero (a=0), theresults are consistent with those of Larraza and Putterman.     

影响分子沉积膜纳米摩擦特性的几个因素

利用原子力显微镜探讨了表面电荷及分子端基对分子沉积膜纳米摩擦特性的影响，并考察了表面形貌在不同扫描方向和法向高度上对摩擦力的影响．结果表明：对Si3N4针尖而言，表面净电荷对摩擦特性有一定的影响，不同类型的表面电荷对摩擦力和摩擦系数的影响不同，正电荷影响相对较大；在较小载荷和粘附力的条件下，针尖在表面上滑动时所受的摩擦作用同分子端基有关；单层CuTsPc分子沉积膜表面形貌的取向对摩擦力影响不大，分子沉积膜的表面高度同摩擦力，即时测量值并不存在对应关系，摩擦力受表面形貌的影响较小．     

A corresponding-state approach to quark-cluster matter

The state of super-dense matter is essential for us to understand the nature of pulsars; however, non- perturbative quantum chromodynamics makes it very difficult to make direct calculations of the state of cold matter at realistic baryon number densities inside compact stars. Nevertheless, from an observational point of view, it is conjectured that pulsars could be made up of quark clusters since the strong coupling between quarks might render the quarks to be grouped in clusters. In this paper, we attempt to find an equation of state of condensed quark-cluster matter in a phenomenological way. Supposing that the quark-clusters could be analogized to inert gases, we apply here the corresponding-state approach to derive the equation of state of quark-cluster matter, as was similarly demonstrated for nuclear and neutron-star matter in the 1970s. According to the calculations that we have presented, the quark-cluster stars, which are composed of quark-cluster matter, could have a high maximum mass that is consistent with observations and, in turn, further observations of pulsar mass could also place a constraint on the properties of quark-cluster matter. We will also briefly discuss the melting heat during the solid-liquid phase conversion and its related astrophysical consequences.     

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

定积分在杆秤刻度制定中的应用

文中利用杠杆原理,结合定积分的知识,给出了杆秤的秤杆线密度不均匀而称量刻度却均匀的理论依据,并由此指出计量工程师利用最大称量来检验秤砣是否损坏的原因.