与冲蚀有关的粘着与犁沟摩擦系数

提出一种与冲击磨损有关的有效摩擦系数，它被定义为冲击过程中，每一瞬间的切向有效摩擦力与法向载荷之比．有效摩擦力被表示为剪切项与犁沟项之组合．剪切项依赖于剪切金屑接合点的状态——滑移或滚动．犁沟项依赖于冲击物在冲击途中使靶材料发生移动的状态．此有效摩擦系数被应用于研究刚性球自由斜冲击延性靶问题．在忽略剪切项仅计及犁沟项的情况下，研究表明，Hutchings实验中的有效冲击摩擦系数是冲击过程与初始冲击角的函数，就时间平均而言，大于Hutchins为拟合计算与实验结果所取的摩擦系数常值0.05．有迹象表明，对于与固粒延性冲蚀有关的刚性球自由斜冲击延性靶问题，在一定条件下，有效摩擦系数主要由犁沟效应确定．     

斜冲击界面动力学研究

讨论了界面受到斜冲击时的动力学问题。有效冲击摩擦系数被处理成冲击过程及初始冲击角的函数 ;界面的法向响应描述计及弹性接触、弹性变形极限以及依赖于应变、应变率及温度的完全塑性接触 ;界面在冲击过程中的构形变化也予考虑 ,并采用平均应变、应变率及最大温升的概念与估算。这种新的斜冲击界面动力学模型用于数值模拟刚性球对于延性靶的斜冲击实验 ,计算与实验比较 ,结果是令人满意的。     

Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

We report the current-voltage (I-V) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent I–V curves. It is found that the I–V data measured at higher temper-atures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression) could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition, similar I-V characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.     

Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain

An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline (PANI) derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substituted reaction. Of the film, the side with being irradiated by UV light during preparation is represented as `A side'; the other side without being irradiated is represented as `N side'. The electrical properties of the heterojunction are measured and the rectifying effect is observed in the {current--voltage} characteristic curves with the values of rectifying ratio (γ) being 20 at ±0.06 V at T= 77K and 4 at ±0.02V at T=300 K separately.     

粘着摩擦系数的分形几何研究

计及作用于接触斑点上的切向力，通过比较作用于接触斑点上的法向弹性载荷与法向塑性载荷，确定了区分弹性接触与塑性接触区域的临界接触斑点面积．总的粘着摩擦系数被表示为弹性接触区与塑性接触区的粘着摩擦系数的组合．假设屈服压力及局部粘着摩擦系数不依赖于接触斑点且等于塑性接触区中的平均值，则总的粘着摩擦系数可用简单的表达式描述．分形几何参数及归一接触面积对于粘着摩擦系数的效应已通过算例表明，研究中，分别考虑了忽略与计及接触斑点的微粒间的相互作用，两种情况的结果完全不同．     

一种基于空穴聚集的层裂模型

基于如下假设，给出了层裂过程中的应力松弛方程，并建立了一种基于空穴聚集的延性层裂模型:在层裂早期，微空穴的主要效应是减小应力作用面积；在层裂后期，应力按空穴聚集时的应力-空隙度依赖关系减小。把P.F.Thomason、D.L.Tonks等及S.Cochran等给出的依赖于应力（压力）的层裂空隙度方程分别耦合于守恒方程、计及损伤的状态方程及本构方程，建立了求解所有变量包括损伤的封闭方程组。这种基于空穴聚集的层裂模型已被应用于一维层裂试验的数值模拟。模型中的层裂强度及临界损伤度初始可以估计，最终的确定将使数值模拟结果与实测的速度（或应力）剖面以及观测的层裂面上的损伤基本一致。分别基于D.L.Tonk等及S.Cochran等给出的依赖于压力的层裂空隙度方程所作的一维层裂试验数值模拟结果基本一致，而与基于P.F.Thomason给出的依赖于应力的层裂空隙度方程所作的相应数值模拟结果有明显差异。     

对膨胀壳体材料失稳的一种简化处理

提出一种简化的塑性失稳处理并被作为高应变率拉伸下材料破坏的粗估判据。这种准则假设局部化失稳在如下条件下发生:应变及应变率硬化率恰被几何及热软化率平衡。指出了经验本构方程及本征本构方程对膨胀断裂应变的影响。通过算例也说明了热软化壳体在内压作用下的破裂过程。     

Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets

This paper reports that the Schottky junctions between low work function metals （e.g. Al and In） and doped semiconducting polymer pellets （e.g. polyaniline （PANI） microsphere pellet and polypyrrole （PPy） nanotube pellet） have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I - V characteristic curves （rectifying ratio γ = 5 at ±6 V bias at room temperature）. As compared to the Al/PANI/Ag, the heterojunction between In and PANI （In/PANI/Ag） exhibits a lower rectifying ratio γ= 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag （γ = 3.2 at ±1.6 V bias） and In/PPy/Ag （γ = 1.2 at ±3.0 V bias）. The results were discussed in terms of thermoionic emission theory.     

论层裂强度

讨论了层裂强度的理论预估及经验确定．指出，平面冲击波致层裂试验的试件自由面速度或界面应力历史的实验最小值与损伤演化过程有关．数值模拟揭示，层裂面上的损伤演化严重影响层裂碎片中的波剖面传播．因此，平面层裂试验的“拉回”信号必须赋予新的解释，层裂强度的实验确定必须涉及层裂过程中的损伤演化．     

一种新的概念性层裂模型

 在重建Cochran-Banner模型的基础上提出了一种新的概念性层裂模型。这种新模型仅保留Cochran-Banner模型中的强度函数,重新定义损伤,并抛弃了基本假设：一旦微损伤形成,使微损伤演化远远易于使固体进一步体积应变,进而修正了差分微元中固体比容的计算。在新的模型中,一旦拉伸应力达到层裂强度,重新定义的损伤将由强度函数确定的应力松弛方程、计及损伤的能量守恒方程、状态方程以及本构方程等一系列封闭方程组确定。新模型中也仅包含两个参数：层裂强度及临界损伤度,它们的确定能使在一定初、边值条件下的层裂试验的数值计算结果与实验测得的靶自由面速度历史或靶-低阻抗界面应力历史以及回收观测的层裂面上的损伤一致。强调指出,选定强度函数或应力松弛方程提供了确定损伤的可能,同时排除了任何外加的损伤演化方程。