磁聚焦法测电子比荷实验中电场对电子束螺旋线起点的影响

利用2种磁聚焦方法,测量了e/m误差与加速电压和聚焦电压的关系.结果表明2种方法中,e/m误差对加速电压和聚焦电压的依赖关系不同.误差的根源可能是由螺距的不确定性引起,而螺距的变化是由螺旋线起点的变化引起的.讨论了螺旋线起点对加速电压和聚焦电压的依赖关系.     

RLC暂态过程震荡峰位对测量时间常量的影响

在测量RLC电路暂态过程时间常量时,通常测量电容电压的欠阻尼震荡峰值间接测量时间常量.欠阻尼震荡峰值往往简单地近似为sin(ωdt+φ)=±1时的电容电压值.讨论了这一近似峰位与准确峰位的区别与联系,结果表明由近似峰位得出的时间常量不存在近似性,与由准确峰位得出的时间常量是一致的.     

RLC电路谐振过程的矢量分析

相量法是分析正弦交流电路问题的重要方法之一。它的特点是数学模型简单、直观,可操作性强。根据三种RLC电路的幅频特性曲线,画出了相应的谐振过程相量图,有助于学生巩固相量的概念,使学生直观理解各种RLC电路的谐振过程。     

自聚焦透镜耦合激光二极管抽运Nd:YVO4锁模激光器的研究

设计了一种简单有效的折叠腔,采用具有部分透过率的平面反射镜作为谐振腔的腔镜,实现了激光的单路输出,提高了激光器输出的利用率,增强了激光器的实用性.利用计算机编程分析了谐振腔内元件的参数对腔内光斑分布的影响.利用自聚焦透镜对激光二极管(LD)进行整形,实现了端面抽运Nd:YVO4半导体可饱和吸收镜(SESAM)连续波锁模...     

Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO_4 and Nd:YAG lasers

Ultrashort pulses were generated in passively mode-locked Nd:YAG and Nd:GdVO4 lasers pumped by a pulsed laser diode with 10-Hz repetition rate. Stable mode-locked pulse trains were produced with the pulse width of 10 ps. The evolution of the mode-locked pulse was observed in the experiment and was discussed in detail. Comparing the pulse evolutions of Nd:YAG and Nd:GdVO4 lasers, we found that the buildup time of the steady-state mode-locking with semiconductor saturable absorber mirrors (SESAMs) was relevant to the upper-state lifetime and the emission cross-section of the gain medium.     

Effects of N2 and glow discharge on growth behaviours of carbon nanotubes prepared by the hot filament chemical vapour deposition method

Carbon nanotubes (CNTs) are prepared by the hot filament chemical vapour deposition method using CH4 and H2 as reaction gases, and the growth behaviours are investigated by scanning electron microscopy and transmission electron microscopy. The results indicate that the CNTs prepared in the absence of N2 or glow discharge are bent; however, they are in an aligned state after introducing N2 into the chamber or forming glow discharge under a negative biased voltage. The results also indicate that the CNTs are of a bamboo-like structure when N2 is intruded as a reaction gas and the alignment degree of the CNTs grown under glow discharge is higher than that grown in N2. This illustrates that the nitric environment and glow discharge play important roles in the growth of CNTs. Combining with the theory related to alloy thermodynamics and collisions, we have analysed the growth mechanism of the CNTs in nitric environment and glow discharge.     

Flash-lamp-pumped picosecond Nd:YAG regenerative amplifier

A flasli-lamp-pumped Nd:YAG regenerative amplifier has been developed at 1.06 μm, seeded with 10-ps pulses from a diode-end-pumped and mode-locked Nd:YAG oscillator with homemade semiconductor saturable absorber mirror (SESAM). The pulse energy was amplified to 2 mJ by the regenerative amplifier at 10-Hz repetition rate. In two-stages amplifier the regenerative amplified pulse energy was amplified to 100 mJ, and 35-mJ double frequency at 532 nm was obtained by extra-cavity double frequency with a KTP crystal.     

氨气浓度对碳纳米管生长影响的研究

利用等离子体增强化学气相沉积系统,用CH4、NH3和H2为反应气体,在沉积有100nm厚Ta过渡层和60nm厚NiFe催化剂层的Si衬底上制备了碳纳米管,并用扫描电子显微镜研究了它们的生长和结构.结果表明当氨气浓度为20;、40;和60;时,碳纳米管的平均长度分别为3.88μm、4.52μm和6.79μm,而其平均直径变化不大,均在240nm左右.最后,分析讨论了氨气浓度对碳纳米管生长和结构的影响.