具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

N－取代硫代磷酰胺二乙酯合成新方法的研究

以ＰＥＧ作相转移催化剂，在无机碱（Ｋ＿２ＣＯ＿３或Ｎａ＿２ＣＯ＿３）存在下，用乙基氯化物（Ｏ，Ｏ－二乙基硫代磷酰氯）与不同的胺反应，合成了六种Ｎ－取代硫代磷酰胺二乙酯，其结构经ＩＲ、ＮＭＲ和元素分析证实。     

Carriers recombination processes in charge trapping memory cell by simulation

We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell＇s performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.     

超薄膜磁性材料上XY模型的临界现象

采用经典XY模型，阐明了三角格子上层状超薄膜磁性材料的相变和临界现象.并用Monte-Carlo方法对该模型的内部能量、比热、chirality等热力学量进行了计算.使用finite-size scaling 分析法对临界现象的性质进行了论述.通过上述分析和计算，发现该模型在反强磁性层与强磁性层内的chirality在一定范围内随温度的变化急剧增加，这是一种新的chirality相变；而在另一范围内存在Kosterliz-Thouless相变和通常的chirality相变.这种新的chirality相变的 关键词： 层状XY模型 临界现象 Monte-Carlo模拟 磁性薄膜     

Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process

Ag-doped and pure ZrO₂ thin films are prepared on Pt/Ti/SiO₂/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO₂ devices. The improved resistive switching behaviour in the Ag doped ZrO₂ devices could be attributed to Ag doping effect on the formation of the stablefilamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO₂ devices, which may be implemented for the application of multi-bit storage.     

稀土固体超强酸SO42-/TiO2/La3+催化合成丁酸异戊酯

The synthesis of isoamyl butyrate with isoamyl alcohol and butyric acid as reactants and rare-earth solid superacid SO₄^2-/TiO₂/La³⁺ as catalyst had been studied.The influent actors of reaction were investigated.The results showed that the appropriate conditions should be: Weight of catalyst was 0.5g (weight of butyric acid if 0.2mol); molar ratio of isoamyl alcohol to butyric acid was 1.8: 1; reaction time was 2.0 h; the taking water reagent (Toluene) was 15mL.The yield of isoamyl butyrate was about 99.0%.     

N—取代苯基—N‘—（2—甲基苯氧乙酰基）氨基脲的合成及鉴定

以无机碱作催化剂,用不同的Ｎ－取代三氯乙酰苯胺与２－甲基苯氧乙酰肼反应,合成了５种取代氨基脲,产率达８２％以上。     

ZnCoO稀磁半导体的室温磁性

采用固相反应法，将ZnO和Co₂O₃粉末按不同的成分配比混合，制备了稀磁半导体Zn_1-xCo_xO (x=0.02,0.06,0.10)材料.并使用H₂气氛退火技术对样品进行了处理，得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度. 关键词： 稀磁半导体 氧化锌 掺杂 固相反应法     

N－取代三氯乙酰胺合成新脲类化合物及其生物活性的研究（I）──N，N″－多亚甲基双（N＇－取代苯基）脲的合成及除草活性

Ｎ－取代三氯乙酰胺合成新脲类化合物及其生物活性的研究（Ｉ）──Ｎ,Ｎ″－多亚甲基双（Ｎ＇－取代苯基）脲的合成及除草活性郭佃顺,黄汝骐,高蓉华,吴志广（山东师范大学化学系,山东省有机合成重点实验室,济南,２５００１４）王玲秀（南开大学元素有机化学研究所...     

Ag(2)(C(33)H(26)N(2)O(2))(H(2)O)(2)(SO(3)CF(3))(2)].0.5C(6)H(6): a luminescent supramolecular silver(I) complex based on metal-carbon and metal-heteroatom interactions

A novel fulvene-type bidentate ligand 1 has been synthesized by an aroylation reaction of cyclohexyl-substituted cyclopentadienyl anions. Compound 1 crystallizes in the triclinic space group P(-)1, with a = 7.0419(5) A, b = 11.9360(8) A, c = 15.6470(11) A, alpha = 85.1440(10) degrees, beta = 78.1140(10) degrees, gamma = 74.5360(10) degrees, V = 1239.76(15) A(3), and Z = 2. The coordination chemistry of 1 was investigated, and a novel Ag-containing coordination polymer (2), linked by both Ag-heteroatom and Ag-carbon interactions, has been synthesized. The coordination polymer has been fully characterized by infrared spectroscopy, elemental analysis, and single-crystal X-ray diffraction. Compound 2 crystallizes in the triclinic space group P(-)1, with a = 7.1654(5) A, b = 15.7277(11) A, c = 18.8157(13) A, alpha = 73.5150(10) degrees, beta = 89.0410(10) degrees, gamma = 89.0970(10) degrees, V = 1355.19(14) A(3), and Z = 2. The solid-state structure of 2 features a one-dimensional double-chain motif. These double chains are in turn cross-linked to each other via strong interchain O-H...O hydrogen bonds, forming a novel two-dimensional network with remarkably large cavities (effective cross section of ca. 21 x 15 A) that are occupied by benzene guest molecules. Both compounds 1 and 2 are luminescent in the solid state, and a large blue-shift in the emission between the free ligand 1 and the ligand incorporated into complex 2 is observed.