高居里温度铁电单晶PIN-PT的机电性能

弛豫铁电单晶Pb(In_1/2Nb_1/2)O₃-PbTiO₃(PIN-PT)相较于常用的Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃(PMN-PT)具有更高的居里温度,在高稳定性、高性能的传感器、换能器方面具有应用前景。本工作采用谐振法研究了[001]方向极化的0.66PIN-0.34PT铁电单晶的全矩阵机电性能参数。0.66PIN-0.34PT 单晶的三方-四方相变温度(T_RT)约为160 ℃,居里温度(T_C)约为260 ℃,室温压电系数d₃₃、d₃₁、d₁₅分别为1 340 pC/N、-780 pC/N、321 pC/N,介电常数ε^T₃₃、ε^S₃₃、ε^T₁₁、ε^S₁₁分别为2 700、905、2 210、1 927,机电耦合系数 k₃₃、k₃₁、k₁₅、k_t分别为 87%、58%、38%、61%。其纵向压电常数(d₃₃)和纵向机电耦合系数(k₃₃)小于 PMN-PT 单晶,但是横向压电性能(d₃₁)和剪切压电性能(d₁₅)都略高于PMN-PT单晶。另外,研究了机电耦合性能随温度的变化趋势,发现0.66PIN-0.34PT单晶在150 ℃以下有较好的温度稳定性。     

Syntheses,Crystal Structures and Fluorescence Properties of Three Complexes Based on 2,2'-Quinoline-4,4'-dicarboxylic Ligands

Crystallography Reports - Three new coordination complexes, [Mn(L)(H2O)4⋅(H2O)3]2 (1), [Mg(L)(H2O)4⋅(H2O)3]2 (2), and [Cu(L)(phen)⋅(H2O)4]2 (3) (H2L =...     

Yb3+掺杂稀土钽铌酸盐的晶体场从头计算研究

Yb³⁺掺杂晶体材料是重要的激光材料,在超短脉冲激光、大功率激光等领域有重要应用前景,但长期以来很难通过实验拟合确定Yb3+晶体场参数,尤其是低对称体系,从头计算是解决此问题的重要途经.本文介绍了适合计算稀土离子掺杂晶体的从头计算DV-Xα方法和有效哈密顿量模型,用该方法计算了Yb³⁺掺杂M型和M'型钽铌酸盐的晶场参数和旋轨耦合参数,得到的能级结构和实验能很好地符合,并发现了Yb³⁺掺杂钽铌酸盐的晶场强度参数随稀土原子序数呈现规律变化.表明结合DV-Xα计算和有效哈密顿量方法是计算Yb³⁺掺杂低对称钽铌酸盐晶体场的有效途径,结果显示Yb3+掺杂钽铌酸盐晶体有望成为新型全固态激光工作物质.     

Thermal Behavior Analysis of Two Synthesized Flavor Precursors of N‐alkylpyrrole Derivatives

To expand the library of pyrrole‐containing flavor precursors, two new flavor precursors—methyl N‐benzyl‐2‐methyl‐5‐formylpyrrole‐3‐carboxylate (NBMF) and methyl N‐butyl‐2‐methyl‐5‐formylpyrrole‐3‐carboxylate (NUMF)—were synthesized by cyclization, oxidation, and alkylation reactions. Thermogravimetry (TG), differential scanning calorimeter, and pyrolysis–gas chromatography/mass spectrometry were utilized to analyze the thermal degradation behavior and thermal degradation products of NBMF and NUMF. The TG‐DTG curve indicated that the maximum mass loss rates of NBMF and NUMF appear at 310 and 268°C, respectively. The largest peaks of NBMF and NUMF showed by the differential scanning calorimeter curve were 315 and 274°C, respectively. Pyrolysis–gas chromatography/mass spectrometry detected small molecule fragrance compounds appeared during thermal degradation, such as 2‐methylpyrrole, 1‐methylpyrrole‐2‐carboxylic acid methyl ester, limonene, and methyl formate. Finally, the thermal degradation mechanism of NBMF and NUMF was discussed, which provided a theoretical basis for their application in tobacco flavoring additives.     

Probing the Catalytic Promiscuity of a Regio‐ and Stereospecific C‐Glycosyltransferase from Mangifera indica

The catalytic promiscuity of the novel benzophenone C‐glycosyltransferase, MiCGT, which is involved in the biosynthesis of mangiferin from Mangifera indica, was explored. MiCGT exhibited a robust capability to regio‐ and stereospecific C‐glycosylation of 35 structurally diverse druglike scaffolds and simple phenolics with UDP‐glucose, and also formed O‐ and N‐glycosides. Moreover, MiCGT was able to generate C‐xylosides with UDP‐xylose. The OGT‐reversibility of MiCGT was also exploited to generate C‐glucosides with simple sugar donor. Three aryl‐C‐glycosides exhibited potent SGLT2 inhibitory activities with IC₅₀ values of 2.6×, 7.6×, and 7.6×10⁻⁷ M , respectively. These findings demonstrate for the first time the significant potential of an enzymatic approach to diversification through C‐glycosidation of bioactive natural and unnatural products in drug discovery.     

n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究

采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能。研究表明,InGaN薄膜为单晶结构,沿[0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35%。霍尔(Hall)效应测试表明In_0.35Ga_0.65N薄膜呈n型半导体特性,具有高的载流子浓度和迁移率及低的电阻率。I-V曲线分析表明In_0.35Ga_0.65N/p-Si异质结具有良好的整流特性,在±4 V时的整流比为25,开路电压为1.32 V。In_0.35Ga_0.65N/p-Si异质结中存在热辅助载流子隧穿和复合隧穿两种电流传输机制。经拟合,得到异质结的反向饱和电流为1.05×10^-8 A,势垒高度为0.86 eV,理想因子为6.87。