| n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究 |
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| 引用本文： | 王婷,赵红莉,郭世伟,姚娟,李爽,符跃春,沈晓明,何欢.n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究[J].人工晶体学报,2021,50(3):484-490. |
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| 作者姓名： | 王婷 赵红莉 郭世伟 姚娟 李爽 符跃春 沈晓明 何欢 |
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| 作者单位： | 广西大学资源环境与材料学院,有色金属及材料加工新技术教育部重点实验室,广西有色金属及特色材料加工重点实验室,广西生态型铝产业协同创新中心,南宁 530004 |
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| 基金项目： | 国家自然科学基金(61474030); 广西自然科学基金(2015GXNSFAA139265); 中国科学院重点实验室开放基金(15ZS06); 广西科学研究与技术开发科技攻关计划(1598008-15); 南宁市科学研究与技术开发科技攻关计划(20151268) |
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| 摘 要： | 采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能。研究表明,InGaN薄膜为单晶结构,沿0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35%。霍尔(Hall)效应测试表明In0.35Ga0.65N薄膜呈n型半导体特性,具有高的载流子浓度和迁移率及低的电阻率。I-V曲线分析表明In0.35Ga0.65N/p-Si异质结具有良好的整流特性,在±4 V时的整流比为25,开路电压为1.32 V。In0.35Ga0.65N/p-Si异质结中存在热辅助载流子隧穿和复合隧穿两种电流传输机制。经拟合,得到异质结的反向饱和电流为1.05×10-8 A,势垒高度为0.86 eV,理想因子为6.87。
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| 关 键 词： | 脉冲激光沉积 n-In0.35Ga0.65N/p-Si异质结 InGaN薄膜 整流特性 半导体 |
| 收稿时间： | 2021-01-04 |
Preparation and Electrical Properties of n-In0.35Ga0.65N/p-Si Heterojunction |
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| WANG Ting,ZHAO Hongli,GUO Shiwei,YAO Juan,LI Shuang,FU Yuechun,SHEN Xiaoming,HE Huan.Preparation and Electrical Properties of n-In0.35Ga0.65N/p-Si Heterojunction[J].Journal of Synthetic Crystals,2021,50(3):484-490. |
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| Authors: | WANG Ting ZHAO Hongli GUO Shiwei YAO Juan LI Shuang FU Yuechun SHEN Xiaoming HE Huan |
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| Affiliation: | Center of Ecological Collaborative Innovation for Aluminum Industry in Guangxi, Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China |
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| Abstract: | InGaN film was deposited on p-Si substrate using a self-refited pulsed laser deposition (PLD) system with double laser light paths and two-component target. The microstructure of InGaN film and the electrical properties of n-InGaN/p-Si heterojunction were investigated. The results show that InGaN film exhibits a single crystal structure with 0001] preferred orientation.The surface of the film is smooth and dense, and the atomic content of In is 35%. The Hall effect measurements show that In0.35Ga0.65N film exhibits n-type characteristics with high carrier concentration, high mobility and low resistivity. The current-voltage (I-V) analysis shows that n-In0.35Ga0.65N/p-Si heterojunction has good rectification characteristics with the rectification ratio of 25 at ±4 V, and the open circuit voltage is 1.32 V. There exists two current transport mechanisms in n-In0.35Ga0.65N/p-Si heterojunction: thermally assisted carrier tunneling and recombination-tunneling mechanism. In addition, the reverse saturation current, barrier height and ideality factor of the heterojunction are 1.05×10-8A, 0.86 eV, and 6.87, respectively. |
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| Keywords: | pulsed laser deposition n-In0 35Ga0 65N/p-Si heterojunction InGaN film rectification characteristic semiconductor |
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