The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET＇s

The anomalous phenomenon of generation current ICD in the lightly doped drain （LDD） nMOSFET measured under the drain bias VD-step mode is reported. We propose an assumption of activated （A） and frozen （F） traps for the VD-step mode： The A traps contributes to ICD while the F process can make them lose the roles as generation centers. The A and F regions can form the F-A region. The comparison of the F and A regions decides the role of the F-A region. The experiments confirm the assumption.     

离散几何的两个铺砌问题

利用图论和代数的方法研究离散几何中的两个铺砌问题:1)给出1×2长方形铺砌多米诺骨牌的充分必要条件;2)对高维空间盒子的情形,给出m_1×m_2×…×m_n砖能够铺砌a_1×a_2×…×a_n盒子的一些必要条件和充要条件.     

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering (DIBL) was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET. These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.     

CDMA移动通信系统用高温超导滤波器的研制

研制了一种基于CDMA移动通信系统接收频段的高温超导滤波器,滤波器的电路芯片采用蒸镀于2英寸0.5mm MgO基片上的双面DyBa2Cu3O7高温超导薄膜,设计制作的滤波器中心频率为830MHz,通带宽度为10MHz,最终滤波器的工作温度为70K,各项技术指标均满足了CDMA系统的要求.     

基于深亚微米工艺的栅接地NMOS静电放电保护器件衬底电阻模型研究

在考虑了电导率调制效应的情况下对深亚微米静电放电(electrostatic discharge, ESD)保护器件的衬底电阻流控电压源模型进行优化, 并根据轻掺杂体衬底和重掺杂外延型衬底的不同物理机制提出了可根据 版图尺寸调整的精简衬底电阻宏模型, 所建模型准确地预估了不同衬底 结构上源极扩散到衬底接触扩散间距变化对触发电压V_t1的影响. 栅接地n型金属氧化物半导体器件的击穿特性结果表明, 所提出的衬底电阻模 型与实验结果符合良好, 且仿真时间仅为器件仿真软件的7%, 为ESD保护器件版 图优化设计提供了方法支持. 关键词： 栅接地n型金属氧化物半导体器件 静电放电 衬底电阻模型     

Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states

We report a model of the carrier transport and the subgap density of states in a polycrystalline ZnO film for simulating a polycrystalline ZnO thin film transistor. This simple model considering the deep and the band tail states reproduces well the characteristics of polycrystalline ZnO thin film transistors. Furthermore, using the developed model, we study the effects of defect parameters on the electrical performances of the polycrystalline ZnO thin film transistors.     

基于纳米ZnO/聚苯乙烯的复合材料光催化性能研究

通过将聚苯乙烯与纳米氧化锌前驱体共混制备了复合材料前驱体,运用TG-DTA联机分析得到了其分解温度及相关热分解数据;前驱体经适当温度煅烧后得复合材料光催化剂,运用TEM、XRD、FT-IR、UV-Vis、ESR等测试手段进行了表征。在荧光灯作用下对复合材料光催化性能进行了检测,并与相同条件下纳米氧化锌的光催化性能进行了比对分析。结果表明,该复合材料在荧光作用下对甲基橙催化降解11h后,甲基橙的降解率为35%,与纳米氧化锌催化降解甲基橙5%的降解率相比有较大程度的提高。     

基于纳米ZnO/聚氯乙烯的复合材料光催化性能研究

本文采用纳米氧化锌与聚氯乙烯溶液共混制备了复合材料前驱体，运用TG-DTA联机分析得到了其分解温度及相关热分解数据；经适当温度煅烧后得到复合材料光催化剂，并用TEM、XRD、FTIR、UV-Vis、ESR对复合材料进行分析表征。在室内普通照明用荧光灯作用下，以甲基橙溶液为催化对象，对复合材料的光催化性能进行了检测，并在相同条件下，与纳米氧化锌、纳米氧化钛及聚氯乙烯直接煅烧产物的光催化性能进行了比对分析；同时研究了pH值对复合材料光催化性能的影响。研究结果表明，复合材料对甲基橙催化降解8 min后，甲基橙溶     

流式微球技术在小分子化合物免疫检测中的应用

流式微球分析技术具有高通量、灵敏、快速且可同步进行多参数分析等特点,在过去的几年里主要应用于医疗诊断等领域,而用于小分子化合物的识别与检测的报道较少.该文介绍了小分子化合物流式微球免疫检测技术原理和临床疾病诊断、治疗方面的应用,探讨并分析了目前该技术存在的问题,展望了其在食品安全、环境监测等领域的应用前景,为开展小分子化合物流式微球检测技术研究提供了新的思路.     

Resistive switching characteristics of Ti/ZrO2/Pt RRAM device

In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory devices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduction and the trap-controlled space charge limited current(SCLC) mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied: the low resistance and reset current are linearly dependent on the set compliance current in the log–log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.