适配体在癌症诊断与靶向治疗中的研究进展

核酸适配体是利用体外筛选技术,即指数富集的配体系统进化技术(SELEX),从核酸分子文库中得到的寡核苷酸片段。其与靶标物有很高的特异性和亲和力,将适配体作为识别单元的生物传感研究以及适配体偶联成像试剂的生物体内外成像研究在临床诊断中有很大的应用前景,此外,适配体靶向癌细胞或组织的治疗方法相比传统化学治疗副作用更小,在临床上也有极大的应用前景。本文综述了适配体目前在癌症诊断和靶向治疗两个方面的研究进展,并分析现阶段存在的问题以及面临的挑战。     

New detector system to measure (n,γ) reaction cross section precisely in China

Based on the urgent requirement of the (n,γ) reaction cross-section in the energy range of keV~MeV, 4π gamma total absorption facility (GTAF) is being constructed at China Institute of Atomic Energy (CIAE). In this paper, firstly the review of historic experimental facilities over the world is presented, and then measurement method of GTAF is described. Finally, the structure requirement for GTAF is presented. Neutron capture reactions are the key process of nucleosynthesis in astrophysics beyond iron element. The application of such facility will improve the experimental condition for the research of (n,γ) reaction.     

纳米金属材料的研究进展及战略地位

 纳米材料的含义及其发展背景纳米是一种长度单位,1纳米等于10-9米(即十亿分之一米)。当物质处于纳米级(1～100nm)时,因其独特的结构使之表现出光、电、热、磁和生物活性等特殊功能,人们将这些特殊功能应用于传统工业领域,以改进产品性能、提高质量和降低成本。这种既具不同于原来组成的原子、分子,也不同于宏观物质的特殊性能构成的材料,即为纳米材料。如果仅仅是尺度达到纳米,而没有特殊性能的材料,也不能叫纳米材料。     

基于新曝光冲突性消息的网络舆论逆转研究

对网络舆论逆转过程进行研究具有十分重要的意义,它有助于管理者有效引导舆论朝良性方向发展.目前,网络舆论逆转研究主要集中于动力学模型构建与仿真实验分析,其研究结果具有一定的理论价值.然而,这是否适用于真实社交网络环境,还尚未经过测试.为了对舆论逆转过程进行研究,构建了符合实际的模型,并对网络舆论逆转典型事例进行了深入分析.通过观察统计,发现网络舆论逆转具有自身的规律:新曝光冲突性消息是导致舆论发生逆转的根本原因;消息的传播影响着群体的发声与沉默;消息的属性包括传播率、可信度、观点倾向、起始传播时间和消息源中心度决定着舆论逆转的幅度.依据这一规律,设置了消息属性参数,并将消息传播与观点演化过程相结合,构建了网络舆论逆转模型.模型的仿真实验结果表明,新冲突性消息的传播率、可信度和消息源中心度正向影响着舆论逆转幅度,其中可信度较传播率影响更大.新的冲突性消息曝光的时间越早,舆论逆转的速率越快,幅度越大.该模型与实际相符,可为理解和解释网络舆论逆转过程、引导网络舆论提供理论依据.     

Impact of STI indium implantation on reliability of gate oxide

The impacts of shallow trench isolation(STI)indium implantation on gate oxide and device characteristics are studied in this work.The stress modulation effect is confirmed in this research work.An enhanced gate oxide oxidation rate is observed due to the enhanced tensile stress,and the thickness gap is around 5%.Wafers with and without STI indium implantation are manufactured using the 150-nm silicon on insulator(SOI)process.The ramped voltage stress and time to breakdown capability of the gate oxide are researched.No early failure is observed for both wafers the first time the voltage is ramped up.However,a time dependent dielectric breakdown(TDDB)test shows more obvious evidence that the gate oxide quality is weakened by the STI indium implantation.Meanwhile,the device characteristics are compared,and the difference between two devices is consistent with the equivalent oxide thickness(EOT)gap.