STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS

The effects of ion implantation on ployacetylene films PA have been studied with Ar~+, Fe~+, C1~+, I~+, Na~+ and K~+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.     

聚乙炔离子注入掺杂及电性能的研究

本文用Ar~+,Fe~+,Cl~+,I~+,Na~+和K~+等离子束,在15—30keV能量范围内注入聚乙炔薄膜,剂量为1×10~(13)-3×10~(17)cm~(-2).借助红外光谱、卢瑟福背散射分析及四探针等测试方法,考察了离子注入诱导聚乙炔膜的化学结构及导电性能的变化,检测了化学掺杂与离子注入杂质的深度分布和p-n结的形成,并在此基础上探讨了离子束与聚合物相互作用过程的机理.     

聚乙炔的离子注入法掺杂

<正> 离子注入是一种物理摻杂方法,在半导体器件的制备中已得到广泛的应用,它与常规的化学、电化学或热扩散掺杂相比具有一些特点:可以通过质量分析器选取单一的注入离子,故掺杂杂质的纯度高;根据注入离子的剂量和能量,精确控制到掺人杂质的数量和深度等等。近年来,采用离子注入技术进行掺杂,改变聚合物或其它绝缘材料表面性质的研究已逐步引起重视真视。