TiO2纳米管阵列负载MnOx复合催化剂的脱硝性能

研究了TiO2纳米管阵列负载的MnOx复合物选择性催化还原NOx的性能.结果显示,在150～250℃下该催化剂脱除NOx的效率达90%以上(200℃下为99%以上),表现出优异的中低温脱硝性能.当反应温度更高时,有可能使反应进入努森扩散控制状态,从而在一定程度上抑制了催化反应的进行.     

Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O₂ into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B₂H₆ concentration of 2.5\% during film deposition, the critical O₂ concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4\%, while that for the growth of cubic boron nitride was higher than 2.1\%. Moreover, the infrared absorption peak observed at around 1230--1280~cm^-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.