Polarized photoluminescence spectroscopy in WS2, WSe2 atomic layers and heterostructures by cylindrical vector beams

Due to the large exciton binding energy, two-dimensional (2D) transition metal dichalcogenides (TMDCs) provide an ideal platform for studying excitonic states and related photonics and optoelectronics. Polarization states lead to distinct light-matter interactions which are of great importance for device applications. In this work, we study polarized photoluminescence spectra from intralayer exciton and indirect exciton in WS₂ and WSe₂ atomic layers, and interlayer exciton in WS₂/WSe₂ heterostructures by radially and azimuthally polarized cylindrical vector laser beams. We demonstrated the same in-plane and out-of-plane polarization behavior from the intralayer and indirect exciton. Moreover, with these two laser modes, we obtained interlayer exciton in WS₂/WSe₂ heterostructures with stronger out-of-plane polarization, due to the formation of vertical electric dipole moment.     

Near-field lithography on the azobenzene polymer liquid crystal films

In this article, we reported near-field research on azobenzene polymer liquid crystal films using scanning near-field optical microscopy (SNOM). Optical writing and subsequently topographic reading of the patterns with subwavelength resolution were carried out in our experiments. Nanometer scale dots and lines were successfully fabricated on the films and the smallest dot diameter is about 120 nm. The width of the line fabricated is about 250 nm. This method is also a choice for nanolithography. The mechanism of the surface deformation on the polymer films was briefly analyzed from the viewpoint of gradient force in the optical near field. The intensity distribution of the electric field near the tip aperture was numerically simulated using finite-difference time-domain (FDTD) method and the numerical simulation results were consistent with the experimental results.     

近场光学显微镜研究CdS0.65Se0.35纳米带空间分辨光致荧光谱

通过热蒸发方法成功制备出CdS_0.65Se_0.35纳米带，得到的纳米带表面光滑，宽度厚度均一，表现出很高的结晶质量.使用近场光学显微镜对纳米带室温下的带边荧光波导和光致荧光近场光谱进行研究.发现CdS_0.65Se_0.35纳米带呈现良好的光波导的特性；同时通过近场光学显微镜得到的空间分辨光谱，发现随着传播距离的增大，纳米带的光致荧光光谱有持续的红移现象.这种光谱红移现象是带间跃迁过程中带尾态的吸收效应引起的，并作了光谱带尾态吸收的理论模拟与实验结果进行比较.光波导传输过程中光谱的变化反映了信息在整个传导过程中的情况，体现了信息传递过程中的稳定性和有效性.三元合金材料CdS_0.65Se_0.35纳米带的波导和光谱性质研究，对于其他组分可调的三元合金纳米结构的制备和研究，及发展新型的纳米功能器件有重要意义.     

近场光学显微镜研究SdS0.65Se0.35纳米带空间分辨光致荧光谱

通过热蒸发方法成功制备出SdS0.65Se0.35纳米带,得到的纳米带表面光滑,宽度厚度均一,表现出很高的结晶质量.使用近场光学显微镜对纳米带室温下的带边荧光波导和光致荧光近场光谱进行研究.发现SdS0.65Se0.35纳米带呈现良好的光波导的特性;同时通过近场光学显微镜得到的空间分辨光谱,发现随着传播距离的增大,纳米带的光致荧光光谱有持续的红移现象.这种光谱红移现象是带间跃迁过程中带尾态的吸收效应引起的,并作了光谱带尾态吸收的理论模拟与实验结果进行比较.光波导传输过程中光谱的变化反映了信息在整个传导过程中的情况,体现了信息传递过程中的稳定性和有效性.三元合金材料SdS0.65Se0.35纳米带的波导和光谱性质研究,对于其他组分可调的三元合金纳米结构的制备和研究,及发展新型的纳米功能器件有重要意义.     

Band gap engineering of atomically thin two-dimensional semiconductors

Atomically thin two-dimensional(2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes(LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.     

High performance photodetectors based on high quality InP nanowires

In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method.Benefitting from the high crystallinity and large specific surface area of InP nanowires,the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W ~(-1) and an external quantum efficiency of2.8 × 10~5% with a fast rise time of 110 ms and a fall time of 130 ms,even at low bias of 0.1 V.The effect of back-gate voltage on photoresponse of the device was systematically investigated,confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation.A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors.These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics.     

利用拉曼和表面光电压谱对一维TiO2@CdS核壳结构界面电荷行为研究

利用化学气相沉积法制备了直径约90 nm,长数十微米的高质量TiO2纳米线.通过化学浴沉积法(CBD)在纳米线表面生长CdS包覆层,形成了一维TiO2@CdS核壳结构.不同包覆层厚度的一维TiO2@CdS核壳结构拉曼光谱研究发现TiO2/CdS界面的光生电荷转移对CdS和TiO2拉曼响应均有增强效应.结合表面光电压谱研究发现表面包覆层的厚度对TiO2/CdS界面光生电荷转移有显著的影响.表面CdS包覆层厚度对拉曼和表面光伏响应影响的研究表明电子在CdS包覆层中的电子扩散距离在30～60 nm.     

Optical processes in the formation of stimulated emission from ZnO nanowires

This paper studies power dependent photoluminescence spectra, the stimulated emission occurring at ultraviolet (UV) band instead of the green emission band of ZnO nanowires, which are prepared with a chemical reduction method. The dynamics of the UV emission and green emission is given to demonstrate the reason of stimulated emission occurring at UV band but not the green emission band under high excitation, which indicates that the slow decay rate of trap state makes it easy to be fully filled and saturated, while the fast decay rate of near-band-edge exciton state makes the UV emission dominate the radiative recombination under high excitation. The UV emission, as well as the corresponding stimulated emission, occurs in competition with the green deep-trap emission. In addition, when pump fluence further increases, the multiple lasing modes appear. The dependence of these lasing modes on the pump fluence is first discussed. This diagram should be helpful to understand and design the optical nanodevices of ZnO nanowires.     

Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers

A simplified n-ZnO/p-Si heterojunction has been prepared by growing n-type ZnO rods on p-type silicon wafer through the chemical vapour deposition method. The reflectance spectrum of the sample shows an independent absorption peak at 384 nm, which may be originated from the bound states at the junction. In the photoluminescence spectrum a new emission band is shown at 393 nm, besides the bandedge emission at 380 nm. The electroluminescence spectrum of the n-ZnO/p-Si heterojunction shows a stable yellow luminescence band centred at 560 nm,which can be attributed to the emission from trapped states. Another kind of discrete ZnO rod has also been prepared on such silicon wafer and is encapsulated with carbonated polystyrene for electroluminescence detection. This composite structure shows a weak ultraviolet electroluminescence band at 395 nm and a yellow electroluminescence band. These data prove that surface modification which blocks the transverse movement of carriers between neighbouring nanorods plays important roles in the ultraviolet emission of ZnO nanorods. These findings are vital for future display device design.