嗜热古细菌Sulfolobus tokodaii脱卤酶在D-乳酸生产中的应用

将来源于嗜热古菌Sulfolobus tokodaii的脱卤酶(L-HADST)基因克隆到载体p ET28b,转化大肠杆菌BL21(DE3)进行表达,在蛋白的N末端带有6个组氨酸融合标签,纯化后经聚丙烯酰胺凝胶电泳显示融合蛋白的分子量约为25000.融合蛋白催化2-氯丙酸(2-CPA)的最适反应温度为70℃,最适p H值为9.5.以外消旋2-CPA为底物生产D-乳酸,利用HPLC检测反应液中2-CPA及乳酸的变化,发现L-HADST只催化L-2-CPA脱氯反应.对酶催化反应条件进行了优化,结果表明,在p H值为9.5,温度为60℃的条件下,当反应体系中缓冲液浓度为3 mol/L,底物浓度为0.5 mol/L,酶浓度为3×104U/L时有较高的底物转化率及乳酸生成量.依据条件优化结果可知,影响反应速度的因素有底物浓度、缓冲液浓度以及酶浓度,其中底物浓度变化对转换率的影响最明显.     

从高质量半导体/超导体纳米线到马约拉纳零能模

作为马约拉纳费米子的“凝聚态版本”,马约拉纳零能模是当前凝聚态物理领域的研究热点.马约拉纳零能模满足非阿贝尔统计,可以构建受拓扑保护的量子比特.这种由空间上分离的马约拉纳零能模构建的拓扑量子比特不易受局域噪声的干扰,具有长的退相干时间,在容错量子计算中具有重要的应用前景.半导体/超导体纳米线是研究马约拉纳零能模和拓扑量子计算的理想实验平台.本文综述了高质量半导体纳米线外延生长、半导体/超导体异质结制备以及相应的马约拉纳零能模研究方面的进展,并对半导体/超导体纳米线在量子计算中的应用前景进行了展望.     

Structure and Magnetic Properties of （In,Mn）As Based Core-Shell Nanowires Grown on Si（111） by Molecular-Beam Epitaxy

We report the structure and magnetic properties of （In,Mn）As based core-shell nanowires grown on Si （111） by molecular-beam epitaxy. Compared to the core InAs nanowire with a flat side facet and consistent diameter, the core-shell nanowire shows a rough sidewall and an inverse tapered geometry. X-ray diffraction, transmission electron microscopy and energy-dispersive x-ray spectroscopy show that （In,Mn）As is formed on the side facets of In As nanowires with a mixture ofwurtzite and zinc-blende structures. Two ferromagnetic transition temperatures of （In,Mn）As from magnetic measurement data are observed： one is less than 25 K, which could be attributed to the magnetic phase with diluted Mn atoms in the InAs matrix, and the other is at ～300 K, which may originate from the undetectable secondary phases such as MnAs nanoclusters. The synthesis of （In,Mn）As based core-shell nanowires provides valuable information to exploit a new type of spintronic nano-materials.     

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding $\sim 1.8\times10^4$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass $m^{\ast }\sim 0.028 m_{0}$ and the quantum lifetime $\tau \sim 0.046 $ ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.     

冠醚硒菁染料的合成

合成了对称和非对称两个新的冠醚硒菁染料2,2'-二乙基-45,4'5'-双并-(15-冠-5)硒碳菁碘化季铵盐和2,2'-二乙基-4,5-并-(15-冠-5)硒碳菁碘化季铵盐以用三种新的中间体2,2'-二硝基-4,5,4',5'-双并-(15-冠-5)二苯基二硒化物, 2-甲基-5,6-并-(15-冠-5)苯并硒唑和2-甲基-3-乙基-5,6-并-(15-冠-5)苯并硒碘化季铵盐。报道了它们的红外、紫外、核磁共振、质谱数据。     

分子束外延制备的垂直易磁化MnAl薄膜结构和磁性

系统地研究了利用分子束外延方法在GaAs(001) 衬底上外延生长的MnAl_x薄膜的结构和垂直易磁化特性随组分及生长温度的依赖关系. 磁性测试表明, 可在较大组分范围内 (0.4≤x≤1.2) 获得大矫顽力的垂直易磁化MnAl_x薄膜, 然而同步辐射X射线衍射和磁性测试发现当x≤0.6时MnAl薄膜出现较多的软磁相, 当x >0.9时, MnAl薄膜晶体质量和化学有序度逐渐降低, 组分为MnAl_0.9时制备的薄膜有最好的[001]取向. 随着生长温度的增加, MnAl_0.9薄膜的有序度、垂直磁各向异性常数、矫顽力和剩磁比均增加, 350℃时制备的MnAl_0.9薄膜化学有序度高达0.9, 其磁化强度、剩磁比、矫顽力和垂直磁各向异性常数分别为265emu/cm³、93.3%、8.3kOe (1 Oe=79.5775A/m)和7.74Merg/cm³ (1 erg=10^-7J). 不含贵金属及稀土元素、良好的垂直易磁化性质、 与半导体材料结构良好的兼容性以及磁性能随不同生长条件的可调控 性使得MnAl薄膜有潜力应用于多种自旋电子学器件. 关键词： 分子束外延 大矫顽力材料 磁各向异性     

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(～30 nm) is much thinner than before(～100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-p...     

关于热功当量教学的建议

现行普物教材中,不少书[1]都不讲焦耳热功当量的实验.我们认为。应该讲.若学时不够,至少应列为选讲或阅读内容. 除了人所共知的理由外,我们认为:人类认识能量守恒与转化定律是沿两条途径进行的.如果说,制造永动机的尝试无一成功是反面的、失败的教训,那么,焦耳等人关于热功当量实验的结论,就可以说是正面的、成功的经验.向学生讲述这一定律时不应忽视这一方面.尤其在SI制推行以后,热功当量的数值J=1,讲焦耳热功当量的实验就更为必要.不讲焦耳热功当量实验容易使青年学生产生认识论方面的误解,如提出对永动机来说“前人做不到的事,我们为什…     

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by the top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for the developments of quantum computation and quantum simulation technologies.     

高质量稀磁半导体(Ga,Mn)Sb单晶薄膜分子束外延生长

理论预言窄禁带稀磁半导体(Ga,Mn)Sb及其异质结构可能存在量子反常霍尔效应等新奇特性, 近年来受到了特别关注. 但是, 由于(Ga,Mn)Sb薄膜生长窗口窄, 纯相(Ga,Mn)Sb薄膜制备比较困难, 迄今关于这类材料的研究报道为数不多. 本文采用低温分子束外延的方法, 通过优化生长条件, 成功制备出厚度为10 nm, Mn含量在0.016至0.039之间的多组(Ga,Mn)Sb薄膜样品. 生长过程中反射式高能电子衍射原位监测和磁性测量都表明没有MnSb等杂相的偏析, 同时原子力显微镜图像表明其表面形貌平滑, 粗糙度小. 通过生长后退火处理, (Ga,Mn)Sb薄膜的最高居里温度达到30 K. 此外, 本文研究了霍尔电阻和薄膜电阻随磁场的变化关系, 在低温下观测到明显的反常霍尔效应.