Effects of Nb and Mo additions on thermal behavior,microstructure and magnetic property of FeCoZrBGe alloy

Both Nb and Mo additions play a vital role in FeCo-based alloys and it is crucial to understand their roles and contents on thermal behavior,microstructural feature and magnetic property of alloys.Nanocrystalline alloy ribbons Fe40Co40Zr9?yMyB10Ge1(y=0–4;M=Nb,Mo)were prepared by crystallizing the as-quenched amorphous alloys.The effects of Nb and Mo additions on structures and properties of the Fe40Co40Zr9B10Ge1 alloy are investigated systemically and compared.With increasing Nb or Mo content,the primary crystallization temperature,grain size ofα-Fe(Co)phase and coercivity Hc all decrease.Moreover,the effect of Mo addition on thermal behavior,microstructure and magnetic properties of the FeCoZrBGe alloy is greater compared to Nb addition.The gap between primary and secondary crystallization peaks of Mo-containing alloys is wider than that of Nb-containing alloys.Both grain size and Hc of Mo-containing alloys are smaller than those of Nb-containing alloys.For Fe40Co40Zr9B10Ge1 alloy,high Mo addition proportion is better compared to high Nb addition proportion.     

High thermal stability of diamond-cBN-B_4C-Si composites

Improving the thermal stability of diamond and other superhard materials has great significance in various applications. Here, we report the synthesis and characterization of bulk diamond–cBN–B_4C–Si composites sintered at high pressure and high temperature(HPHT, 5.2 GPa, 1620–1680 K for 3–5 min). The results show that the diamond, cBN, B_4C,B_xSiC, SiO_2 and amorphous carbon or a little surplus Si are present in the sintered samples. The onset oxidation temperature of 1673 K in the as-synthesized sample is much higher than that of diamond, cBN, and B_4C. The high thermal stability is ascribed to the covalent bonds of B–C, C–N, and the solid-solution of B_xSiC formed during the sintering process. The results obtained in this work may be useful in preparing superhard materials with high thermal stability.     

银辅助化学刻蚀半导体材料

微电子器件的发展趋势是小型化和多功能化,这就对半导体材料的加工技术提出了更高的要求。与传统的加工技术相比,近年发展起来的贵金属粒子辅助化学刻蚀半导体材料制备微结构技术因操作简单、不需要精密设备、反应迅速和可批量生产等优点引起了国内外学者的广泛关注。本文以Si为主,详细介绍了Ag辅助化学刻蚀半导体材料的机理、反应现象及影响因素,总结了各种微结构的制备技术及其应用。此外,对Ge,Si1-xGex和GaAs等其他半导体材料的贵金属粒子辅助化学刻蚀技术也进行了综述。同时分析了贵金属粒子辅助化学刻蚀半导体目前存在的问题,并对未来的研究方向进行了展望。