High thermal stability of diamond-cBN-B_4C-Si composites |
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Institution: | 1. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China;2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China |
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Abstract: | Improving the thermal stability of diamond and other superhard materials has great significance in various applications. Here, we report the synthesis and characterization of bulk diamond-cBN-B4C-Si composites sintered at high pressure and high temperature (HPHT, 5.2 GPa, 1620-1680 K for 3-5 min). The results show that the diamond, cBN, B4C, BxSiC, SiO2 and amorphous carbon or a little surplus Si are present in the sintered samples. The onset oxidation temperature of 1673 K in the as-synthesized sample is much higher than that of diamond, cBN, and B4C. The high thermal stability is ascribed to the covalent bonds of B-C, C-N, and the solid-solution of BxSiC formed during the sintering process. The results obtained in this work may be useful in preparing superhard materials with high thermal stability. |
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Keywords: | high pressure and high temperature diamond-cBN-B4C-Si composites high thermal stability |
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