Charge compensation and capacity fading in LiCoO_2 at high voltage investigated by soft x-ray absorption spectroscopy

In order to obtain an in-depth insight into the mechanism of charge compensation and capacity fading in LiCoO_2, the evolution of electronic structure of LiCoO_2 at different cutoff voltages and after different cycles are studied by soft x-ray absorption spectroscopy in total electron(TEY) and fluorescence(TFY) detection modes, which provide surface and bulk information, respectively. The spectra of Co L2,3-edge indicate that Co contributes to charge compensation below 4.4 V.Combining with the spectra of O K-edge, it manifests that only O contributes to electron compensation above 4.4 V with the formation of local O 2 p holes both on the surface and in the bulk, where the surficial O evolves more remarkably. The evolution of the O 2 p holes gives an explanation to the origin of O_2~-or even O_2. A comparison between the TEY and TFY of O K-edge spectra of LiCoO_2 cycled in a range from 3 V to 4.6 V indicates both the structural change in the bulk and aggregation of lithium salts on the electrode surface are responsible for the capacity fading. However, the latter is found to play a more important role after many cycles.     

超高效液相色谱法检测植物源性食品中花青素

建立了检测植物源性食品中6种花青素的超高效液相色谱法分析方法,并分析比较了不同植物源性食品中花青素物质的种类和含量差异.结果 表明:酸化温度95℃和酸化时间60 min,提取效果最佳;分离时间12 min,能有效检测飞燕草色素、矢车菊色素、天竺葵色素、矮牵牛色素、芍药素、锦葵色素6种组分.在两个添加水平下,上述6种组分...     

碰撞池ICP-MS测定大米中Ca、Mn、Fe、Cu、Ni、As、Se、Sr、Cd、Ba和Hg的研究

建立碰撞池ICP-MS测定大米中Ca、Mn、Fe、Cu、Ni、As、Se、Sr、Cd、Ba和Hg的分析方法。采用微波消解方法消解样品后直接进行ICP-MS分析,并采用碰撞池技术消除质谱干扰,混合内标溶液校正基体干扰和漂移。方法的精密度均小于5%,回收率为85%—113%,并对标准物质（大米）GBW 10010GSB-1进行方法验证,获得较满意的结果。本法快速、简单,能满足大米中常量、微量、痕量金属元素同时测定的分析需求。     

Temperature effect on the electronic structure of Nb:SrTiO3 (100) surface

The effect of temperature on the electronic structure of Nb-doped SrTiO_3(100) surface is investigated by highresolution synchrotron radiation photoemission spectroscopy.According to the x-ray photoemission spectroscopy(XPS)results,at an annealing temperature of less than 700 ℃,the adsorbed carbon and hydroxyl on the STO surface could be removed,to expose the fresh intrinsic surface with a constant ratio of Ti/O.It is obvious that the STO would be doped by Ca~+ impurities of bulks and O vacancies in the surface after annealing at 920 ℃ for one hour.     

Photoelectric characteristics of silicon P–N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy

Silicon nanopillars are fabricated by inductively coupled plasma(ICP) dry etching with the cesium chloride(CsCl)islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus(P) diffusion by liquid dopant source(POCl3) at 870℃ to form P–N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy(XPS) is used to measure the Si 2p core levels of P–N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P–N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light.The energy shift of the Si 2p core level is-0.27 eV for the planar P–N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.     

Observation of selective surface element substitution in FeTe_(0.5)Se_(0.5) superconductor thin film exposed to ambient air by synchrotron radiation spectroscopy

A systematic investigation of oxidation on a superconductive Fe Te_(0.5)Se_(0.5)thin film,which was grown on Nb-doped SrTiO_3(001) by pulsed laser deposition,has been carried out.The sample was exposed to ambient air for one month for oxidation.Macroscopically,the exposed specimen lost its superconductivity due to oxidation.The specimen was subjected to in situ synchrotron radiation photoelectron spectroscopy(PES) and x-ray absorption spectroscopy(XAS) measurements following cycles of annealing and argon ion etching treatments to unravel what happened in the electronic structure and composition after exposure to air.By the spectroscopic measurements,we found that the as-grown FeTe_(0.5)Se_(0.5)superconductive thin film experienced an element selective substitution reaction.The oxidation preferentially proceeds through pumping out the Te and forming Fe–O bonds by O substitution of Te.In addition,our results certify that in situ vacuum annealing and low-energy argon ion etching methods combined with spectroscopy are suitable for depth element and valence analysis of layered structure superconductor materials.