微型气相色谱仪热导检测器放大电路设计

Agilent公司生产的Agilent 3000+系列色谱仪是微型气相色谱仪(micro GC)的典型代表,其热导检测器的信号放大电路和模数转换器(analog-to-digital convertor, ADC)存在功耗大、工作温度过高等不足.文中分析了micro GC电路的功能需求,从选用低噪声的24 bit Δ-Σ ADC ADS1255入手,设计了高共模电压容限、低噪声的全差分放大电路及其他外围电路,并且对全差分放大电路建立了噪声模型,计算了其噪声理论值,优化了系统设计参数.另外,还设计了一个测试平台,对所设计的全差分放大电路和ADC的性能进行了全面的测试评估,结果表明新设计的热导检测器放大电路与ADC的总噪声(以美国材料与试验协会(ASTM)标准值计)仅为1.25 μV,总功耗降低了3.7 W,满足micro GC的功能需求,而且可靠性高、体积小、结构简单,可用于新一代micro GC的研发和生产.     

用新方法测量Si-SiO2界面态电子俘获截面与温度及能量的关系

本文提出了一个利用载流子填充电容瞬态初始时间变化率,准确测量在绝缘体与半导体界面上的界面态俘获截面的方法,其中考虑了电荷势反馈效应对载流子填充过程的影响,并给出准确计算这种影响的简单方法.将这一方法用于测量n型硅MOS电容器中的Si-SiO₂界面态.结果表明其电子俘获截面强烈地依赖于温度和能量.     

注氮GaAs中的深能级及其对自由载流子的补偿

详细研究了注氮n型GaAs中深的和浅的杂质缺陷的电学性质。深能级瞬态谱(DLTS)技术测量表明,能量为140keV和剂量为1×10¹³cm^-2的氮离子注入并经800℃退火30min的GaAs中存在四个电子陷阱,E₁(0.111),E₂(0.234),E₃(0.415),E₄(0.669)和一个空穴陷阱H(0.545),而在能量为20keV和剂量为5×10^{14关键词：}     

在C_(70)固体p-GaAs结构中的甚深深能级

发展了恒温电容瞬态数据处理方法 ,称新方法为恒温电容瞬态时间积谱 (ICTTS) .用ICTTS方法测量分析了C70固体 p GaAs异质结的深能级 ,结果发现在C70 固体中存在两个很深的空穴陷阱 ,H1 和H2 ,它们的能级位置分别为Ev 0 85 6eV和Ev 1 0 37eV     

THE INTERACTION OF Au AND THE Si/SiO2 INTERFACE DEFECT Hit(0.494)

The defects at the Si/SiO₂ interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO₂ interface defect,H_it(0.494), results in the formation of a new interface de-fect, Au-H_it(0.445). Just like the interface defect, H_it(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO₂ interface.     

THE INTERACTION OF Au AND THE Si/SiO2 INTERFACE DEFECT Hit(0.494)

The defects at the Si/SiO₂ interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO₂ interface defect,H_it(0.494), results in the formation of a new interface de-fect, Au-H_it(0.445). Just like the interface defect, H_it(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO₂ interface.     

负载型Heck反应催化剂的研究进展

Heck反应是一类重要的C-C偶联反应,传统的均相Heck反应催化剂存在分离和回收困难等问题;近年来负载型Heck反应催化剂的研究引起了人们的广泛关注.本文综述了钯基和非钯基负载型Heck反应催化剂的研究进展,评述了不同载体上催化活性组分对Heck反应的特点,并展望了其发展趋势.     

p型硅MOS结构Si/SiO_2界面及其附近的深能级与界面态

用深能级瞬态谱(DLTS)技术系统研究了Si/SiO_2界面附近的深能级和界面态。结果表明,在热氧化形成的Si/SiO_2界面及其附近经常存在一个浓度很高的深能级,它具有若干有趣的特殊性质,例如它的DLTS峰高度强烈地依赖于温度,以及当栅偏压使费密能级与界面处硅价带顶的距离明显小于深能级与价带顶的距离时,仍然可以观测到一个很强的DLTS峰。另外,用最新方法测量的Si/SiO_2界面连续态的空穴俘获截面与温度有关,而与能量位置无明显关系,DLTS测量的界面态能量分布与准静态C-V测量的结果完全不一致。本文提出的Si/SiO_2界面物理模型能合理地解释上述问题。     

Coupling length variation and multi-wavelength demultiplexing in photonic crystal waveguides

In this Letter, the effects of material/structure parameters of photonic crystal(Ph C) parallel waveguides on the coupling length are investigated. The results show that, increasing the effective relative permittivity of the Ph C leads to a downward shift of the photonic bandgap and a variation of the coupling length. A compact Ph C 1.31/1.55 μm wavelength division multiplexer(WDM)/demultiplexer with simple structure is proposed,where the output power ratios are more than 24 d B. This WDM can multiplex/demultiplex other light waves efficiently.     

在C70固体/p-GaAs结构中的甚深深能级

发展了恒温电容瞬态数据处理方法，称新方法为恒温电容瞬态时间积谱(ICTTS).用ICT TS方法测量分析了C₇₀固体/p GaAs异质结的深能级，结果发现在C₇₀固体中存在两个很深的空穴陷阱，H C₁和H₂，它们的能级位置分别为Ev⁺⁰856eV和 Ev+1037eV. 关键词： 70')" href="#">C₇₀ 深能级 恒温电容瞬态