顺二醇类生物分子的硼亲和分子印迹研究进展EI北大核心CSCD

含顺二酚的分子,如糖类、糖苷和糖蛋白等,在糖组学、代谢组学和蛋白质组学等不同领域都有着至关重要的作用。但是这类样品分子通常存在于非常低丰度的环境中且与许多干扰化合物共存,给临床和生物学上的分离检测带来了巨大的困难。因此,开发建立对顺二醇类化合物简单高效的分离方法具有重要意义。分子印迹技术,是基于模拟生物体内抗原与抗体相互作用原理而发展起来的一种新兴技术,近年来因其特定的分子识别能力以及材料的稳定性和重复性而引起了广泛关注,也在顺二醇类化合物的分离方面得到了许多应用。本综述总结了在顺二醇类化合物的分子印迹方面的最新进展,并对其未来发展的方向和前景进行了讨论。     

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template

Alpha particle radiation detectors with planar double Schottky contacts (DSC) are directly fabricated on 5-μm-thick epitaxial semi-insulating (SI) GaN:Fe film with resistivity higher than 1×10⁸Ω·cm. Under 10 V bias, the detector exhibits a low dark current of less than 5.0×10^-11 A at room-temperature, which increases at higher temperatures. Linear behavior in the semi-log reverse current-voltage plot suggests that Poole-Frenkel emission is the dominant carrier leakage mechanism at high bias. Distinct double-peak characteristics are observed in the energy spectrum of alpha particles regardless of bias voltage. The energy resolution of the SI-GaN based detector is determined to be ～ 8.6% at the deposited energy of 1.209 MeV with a charge collection efficiency of ～ 81.7%. At a higher temperature of 90 ℃, the measured full width at half maximum (FWHM) rises to 235 keV with no shift of energy peak position, which proves that the GaN detector has potential to work stably in high temperature environment. This study provides a possible route to fabricate the low cost GaN-based alpha particle detector with reasonable performance.     

离子注入对ZnTe:O中间带光伏材料的微观结构及光学特性的影响

II-VI和III-V族高失配合金半导体是新型高效中间带太阳电池的优选材料体系,但中间带的形成及其能带调控等关键问题仍未得到有效解决.采用氧离子注入方式,在非平衡条件下对碲化锌(Zn Te)单晶材料实现了等电子掺杂,深入研究了离子注入对Zn Te:O材料的微观结构和光学特性的影响.研究表明:注入合适浓度的氧离子(2.5×1018cm-3)将会形成晶格应变,并诱导1.80 e V(导带下0.45 e V)中间带的产生;而较高浓度(2.5×1020cm-3)的氧离子会导致Zn Te注入层表面非晶化,并增强与锌空位相关的深能级(～1.6 e V)发光.时间分辨光致发光结果显示,离子注入诱导形成的中间带主要是和氧等电子陷阱束缚的局域激子发光有关,载流子衰减寿命较长(129 ps).因此,需要降低晶格紊乱度和合金无序,实现电子局域态向扩展态的转变,从而有效调控中间带能带结构.     

Solar-blind ultraviolet band-pass filter based on metal–dielectric multilayer structures

Solar-blind ultraviolet （UV） band-pass filter has significant value in many scientific, commercial, and military appli- cations, in which the detection of weak UV signal against a strong background of solar radiation is required. In this work, a solar-blind filter is designed based on the concept of ＂transparent metal＂. The filter consisting of Al/SiO2 multilayers could exhibit a high transmission in the solar-blind wavelength region and a wide stopband extending from near-ultraviolet to infrared wavelength range. The central wavelength, bandwidth, Q factor, and rejection ratio of the passband are numerically studied as a function of individual layer thickness and multilayer period.     

Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.     

7种胺基键合硅胶的制备及其对重金属Pb2+的吸附

制备了氨丙基键合硅胶（SiO₂-N）、乙二胺-N-丙基键合硅胶（SiO₂-2N）、二乙烯三胺基键合硅胶（SiO₂-3N）、三乙烯四胺基键合硅胶（SiO₂-4N）、四乙烯五胺基键合硅胶（SiO₂-5N）、五乙烯六胺基键合硅胶（SiO₂-6N）和聚乙烯亚胺基键合硅胶（SiO₂-nN）,一步法制备的SiO₂-N和SiO₂-2N的胺基键合密度高达2.07 mmol/g和1.71mmol/g,两步法制备的SiO₂-nN的胺基键合密度为0.02mmol/g,其余胺基键合硅胶中胺基密度约为0.50mmol/g。这7种胺基键合硅胶被用于水溶液中常见重金属离子Pb²⁺的吸附研究。结果表明,在30℃条件下,分别加入10 mL 400 mg/L的Pb²⁺溶液（pH 5）和20 mg胺基键合硅胶进行吸附,10 h后,Pb²⁺吸附量达到最大,吸附过程符合Freundlich等温方程。SiO₂-N、SiO₂-2N、SiO₂-3N、SiO₂-4N、SiO₂-5N、SiO₂-6N和SiO₂-nN对Pb²⁺的吸附量依次为131.28、138.98、85.37、75.22、61.87、79.12和114.06 mg/g,这些胺基键合硅胶在吸附Pb²⁺方面均非常具有潜力。     

切割角蓝宝石基氧化镓薄膜MOCVD外延及日盲紫外光电探测器制备

本文使用金属有机物化学气相沉积(MOCVD)法在不同切割角的c面蓝宝石衬底上外延氧化镓(β-Ga₂O₃)单晶薄膜，揭示了衬底切割角对外延薄膜晶体质量的影响规律。研究表明，当衬底切割角为6°时，β-Ga₂O₃外延膜具有较小的X射线摇摆曲线半峰全宽(1.10°)和最小的表面粗糙度(7.7 nm)。在此基础上，采用光刻、显影、电子束蒸发及剥离工艺制备了金属-半导体-金属结构的日盲紫外光电探测器，器件的光暗电流比为6.2×10⁶,248 nm处的峰值响应度为87.12 A/W,比探测率为3.5×10¹⁵ Jones,带外抑制比为2.36×10⁴,响应时间为226.2μs。     

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (<1 A/cm2 ) with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.     

Enhanced single photon emission in silicon carbide with Bull's eye cavities

The authors demonstrate a Bull's eye cavity design that is composed of circular Bragg gratings and micropillar optical cavity in 4H silicon carbide (4H-SiC) for single photon emission. Numerical calculations are used to investigate and optimize the emission rate and directionality of emission. Thanks to the optical mode resonances and Bragg reflections, the radiative decay rates of a dipole embedded in the cavity center is enhanced by 12.8 times as compared to that from a bulk 4H-SiC. In particular, a convergent angular distribution of the emission in far field is simultaneously achieved, which remarkably boost the collection efficiency. The findings of this work provide an alternative architecture to manipulate light—matter interactions for achieving high-efficient SiC single photon sources towards applications in quantum information technologies.     

导电聚合物/贵金属复合材料应用于C1小分子电催化氧化

低温燃料电池作为一种新型的能源装置,具有能量转换效率高、工作温度低、无污染、液体燃料处理简单、启动迅速等诸多优点,已成为世界各国竞相研究的热点。有机小分子的高效电催化氧化直接关系到低温燃料电池的发展和应用。低温燃料电池的电极材料主要是碳/贵金属复合材料,碳载体易导致贵金属粒子团聚、且易发生电氧化腐蚀等缺点降低了贵金属的利用率和电池的使用寿命。导电聚合物具有高的抗腐蚀性、高的表面积、低电阻和高稳定性得到很大关注。本文综述了近年来国内外导电聚合物/金属复合电极材料在燃料电池中的研究进展。