强脉冲X射线辐照在Si-SiO2中感生的界面态及退火消除

 利用强脉冲X射线对Si-SiO₂界面进行了辐照，测量了界面态曲线和退火曲线。实验显示，经过强脉冲X射线对Si-SiO₂界面进行的辐照，在Si-SiO₂界面感生出新的界面态，感生界面态的增加与辐照剂量成正比，并且易出现饱和现象。总结出了感生界面态密度产额Dit随辐照剂量D变化的分布式，并定性分析了Dit随D变化的行为。随后进行的退火实验表明，强脉冲X射线辐照感生出的界面态越多，退火时这些界面态就消除得越快。退火过程显示有滞后现象，即辐照剂量大的阈电压漂移，在退火后恢复的绝对值，要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系，定性解释了滞后现象。     

质子与金属布线层核反应对微纳级静态随机存储器单粒子效应的影响分析

金属布线层对微纳级静态随机存储器(static random access memory, SRAM) 质子单粒子效应敏感性的影响值得关注. 利用Geant4针对不同能量(30 MeV, 100 MeV, 200 MeV和500 MeV)的质子与微纳级SRAM器件的核反应过程开展计算, 研究了核反应次级粒子的种类、线性能量传输值(linear energy transfer, LET)及射程情况, 尤其对高LET 值的核反应次级粒子及其射程开展了详细分析. 研究表明, 金属布线层的存在和质子能量的增大为原子序数大于或等于30的重核次级粒子的产生创造了条件, 器件体硅区中原子序数大于60的重核离子来源于质子与钨材料的核反应, 核反应过程中的特殊作用机理会生成原子序数在30至50之间的次级粒子, 且质子能量的增大有助于这种作用机理的发生, 原子序数在30至50之间的次级粒子在器件体硅区的LET值最大约为37 MeV·cm²/mg, 相应射程可达到几微米, 对于阱深在微米量级的微纳级SRAM器件而言, 有引发单粒子闩锁的可能. 研究结果为空间辐射环境中宇航器件的质子单粒子效应研究提供理论支撑.     

同步动态随机存储器辐射效应测试系统研制

在分析同步动态随机存储器(SDRAM)辐射效应主要失效现象的基础上,研制了具备了读写功能测试、刷新周期测试及功耗电流测试三种功能的SDRAM辐射效应在线测试系统,并开展了SDRAM的总剂量效应实验研究。结果表明,总剂量效应会导致SDRAM器件的数据保持时间不断减小,功耗电流不断增大以及读写功能失效。实验样品MT48LC8M32B2的功能失效主要由外围控制电路造成,而非存储单元翻转。数据保持时间虽然随着辐照剂量的累积不断减小,但不是造成该器件功能失效的直接原因。     

First principles simulation technique for characterizing single event effects

This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.     

铁电存储器中高能质子引发的单粒子功能中断效应实验研究

利用中国原子能科学研究院的中高能质子实验平台,针对两款商用铁电存储器开展了中高能质子单粒子效应实验研究,发现其中一款器件在质子辐照下发生了单粒子翻转和单粒子功能中断.本文主要针对单粒子功能中断效应展开了后续实验研究.首先通过改变质子能量对器件进行辐照,发现单粒子功能中断截面随质子能量的提高而增加.为进一步研究器件发生单粒子功能中断的机理,利用激光微束平台开展了辅助实验,对铁电存储器的单粒子功能中断效应的敏感区域进行了定位,最后发现铁电存储器单粒子功能中断是由器件外围电路发生的微锁定导致的.     

利用等时退火法预估等温退火效应实验研究

对电离辐照损伤后的MOS器件的等温和等时退火特性进行了研究，结果发现，首先，100℃等 温退火是有效的，等时退火所需的全过程时间最短；其次，+5V栅偏压退火相对于0V和浮空 偏置条件，阈值电压恢复速度快、恢复程度大；最后，利用等时退火数据对等温效应进行了 理论预估，实验等温曲线和预估结果吻合得较好. 关键词： 等温退火 等时退火 MOS器件     

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

In order to accurately predict the single event upsets(SEU) rate of on-orbit proton, the influence of the proton energy distribution, incident angle, supply voltage, and test pattern on the height, width, and position of SEU peak of low energy protons(LEP) in 65 nm static random access memory(SRAM) are quantitatively evaluated and analyzed based on LEP testing data and Monte Carlo simulation. The results show that different initial proton energies used to degrade the beam energy will bring about the difference in the energy distribution of average proton energy at the surface and sensitive region of the device under test(DUT), which further leads to significant differences including the height of SEU peak and the threshold energy of SEU. Using the lowest initial proton energy is extremely important for SEU testing with low energy protons. The proton energy corresponding to the SEU peak shifts to higher average proton energies with the increase of the tilt angle, and the SEU peaks also increase significantly. The reduction of supply voltage lowers the critical charge of SEU, leading to the increase of LEP SEU cross section. For standard 6-transitor SRAM with bit-interleaving technology,SEU peak does not show clear dependence on three test patterns of logical checkerboard 55 H, all "1", and all "0". It should be noted that all the SEUs in 65 nm SRAM are single cell upset in LEP testing due to proton's low linear energy transfer(LET) value.     

Discussion of the metric in characterizing the single-event effect induced by heavy ions

The single-event effect(SEE) is the most serious problem in space environment.The modern semiconductor technology is concerned with the feasibility of the linear energy transfer(LET) as metric in characterizing SEE induced by heavy ions.In this paper,we calibrate the detailed static random access memory(SRAM) cell structure model of an advanced field programmable gate array(FPGA) device using the computer-aided design tool,and calculate the heavy ion energy loss in multi-layer metal utilizing Geant4.Based on the heavy ion accelerator experiment and numerical simulation,it is proved that the metric of LET at the device surface,ignoring the top metal material in the advanced semiconductor device,would underestimate the SEE.In the SEE evaluation in space radiation environment the top-layers on the semiconductor device must be taken into consideration.     

不同辐射环境下CMOS器件总剂量测试技术与损伤差异研究

对应用在不同辐射环境下HP4156半导体参数自动化在线测试系统以及脉冲总剂量效应在线测试系统进行了详细的介绍,说明其工作原理和技术指标,并利用这两套测试系统对典型CMOS器件4007在强光一号加速器脉冲硬X射线状态、长脉冲γ射线状态以及⁶⁰Co稳态γ射线状态下开展了不同辐射环境总剂量损伤效应的比较研究, 为今后深入进行此项工作打下了基础.     

强脉冲X射线辐照Si-SiO2界面对C-V 和I-V特性曲线的影响

 利用强脉冲X射线对Si-SiO₂界面进行了辐照，测量了C-V曲线和I-V曲线。实验发现，经过强脉冲X射线对Si-SiO₂界面进行的辐照，使C-V曲线产生了正向漂移，这一点与低剂量率辐射结果不同；辐射后，感生I-V曲线产生畸变；特别地，从I-V曲线上还反映出强脉冲X射线辐照的总剂量效应造成电特性 参数明显退化，最后甚至失效。讨论了强脉冲X射线辐照对Si-SiO₂界面产生损伤的机理，并对实验结果进行了解释。