衬底加热和电极修饰对提高有机场效应晶体管性能的影响

通过衬底加热和氧化钼(MoO3)修饰源漏极制备了并五苯有机场效应晶体管.研究了衬底温度和电极修饰层厚度对器件性能的影响.实验结果表明:当衬底温度为60℃、MoO3修饰层为10 nm时,器件性能获得了显著增强,场效应迁移率由原来的3.39×10-3 cm2/(V·s)提高到2.25 ×10-1 cm2/(V·s),阈值电压由12 V降低到3V.器件性能的改善归因于:衬底加热可以优化有源层形貌,改善载流子传输;而MoO3修饰层显著降低了电极与有源层之间的接触势垒,提高了载流子的注入.因此,衬底加热与电极修饰对于制备高性能有机场效应晶体管是不可或缺的优化手段.     

旋涂速度对制备P3HT有机场效应晶体管性能的影响

采用溶液化的方法制备了以PMMA为绝缘层、P3HT为有源层的有机场效应晶体管.研究了P3HT有源层和PMMA绝缘层的旋涂速度对器件性能的影响.实验结果表明,当P3HT和PMMA的旋涂速度均为2 000 r/min时,器件的性能最佳.峰值场效应迁移率为6.84×10^-2 cm²·V^－1·s^－1.结果表明,选择适当的旋涂速度是一种有效提高溶液化制备有机场效应晶体管性能的方法.     

铜酞菁LB膜与金属界面光二次谐波现象

从铜酞菁的衍生物(copper tetra-tert-butyl phthalocyanine, CuttbPc) LB 膜与金属(Al)界面处观察到较强的光二次谐波信号. 初步认为其原因是界面上所形成的空间电荷感应电场打破了分子原有的对称性. 运用四层物理模型来分析界面中的非线性光学过程, 计算出二次谐波信号强度与膜厚、偏振角及入射角的依赖关系, 与实验数据符合较好. 研究结果表明, 光二次谐波信号的产生与界面静电现象有密切关系, 可作为检测界面空间电荷感应电场、揭示其产生物理机制的有力工具.     

Second harmonic generation at the interface of copper tetra-tert-butyl phthalocyanine Langmuir-Blodgett film/metal

As one of the most primitive nonlinear optical phenomena, optical second harmonic genera-tion (SHG) has been investigated for half a century and it has become a very useful spectroscopic tool in the study of surface and interface[1—3]. It was theoretically shown that the SH signal cannot be generated in a centrosymmetric system. However, the generation of SH signal from the centro-symmetric molecules such as fullerene (C60) and CuPc has been detected[4—7]. In our recent ex-periments, an …     

铜酞青LB膜与金属界面光二次谐波现象

从铜酞菁的衍生物（copper tetra-tert-butyl phthalocyanine,CuttbPc）LB膜与金属（A1）界面处观察到较强的光二次谐波信号.初步认为其原因是界面上所形成的空间电荷感应电场打破了分子原有的对称性.运用四层物理模型来分析界面中的非线性光学过程,计算出二次谐波信号强度与膜厚、偏振角及入射角的依赖关系,与实验数据符合较好.研究结果表明,光二次谐波信号的产生与界面静电现象有密切关系,可作为检测界面空间电荷感应电场、揭示其产生物理机制的有力工具.     

Analysis of Second-Harmonic Generation from CuttbPc LB Film／Metal Interface

Second-harmonic generation signals from a CuttbPc LB film deposited on metal (Al or Au)-glass substrates were investigated. It was observed that there were two second-harmonic peaks at the wavelength of 1060 and 1250nm in the CuttbPc/Al film, but only one peak at 1050nm in the CuttbPc/Au film. Meanwhile the surface electric potentials (SEP) at the interfaces of LB film/metals were also measured using a Kelvin probe. The SEP in the CuttbPc/Al decreases and eventually approaches a saturated value of -1.0V as the film thickness increases, while the SEP in the CuttbPc/Au is nearly zero. Based on the experimental results and theoretical analysis, it was considered that the space-charge-induced electric field makes a main contribution to the second-harmonic generation at 1250nm in the CuttbPc/Al film.     

在椭偏测厚中用TI——59计算器直接计算薄膜厚度

当前一些非常薄的膜层被广泛地应用于各技术领域中。因此,精确地测量薄膜厚度是一种重要的物理测量技术。其中,椭圆偏振法这种测量方法,是通过光波反射时偏振状态变化进行的;它能测很薄的膜厚(可达20A以下),测量精度很高(理论上误差可小于±10A),在各种已有的测膜厚方法中,它是能测膜厚最薄和测量精度最高的一种。但由于长期存在着数学处理上的困难与局限性,只有依靠电子计算机的发展和应用才使椭圆偏振法获得了生命力。     

Measurement of Surface Potential at Metal／Organic-Material Interfaces by Electro-Absorption Method

The surface potential built-in vacuum deposited phthalocyanine (Pc) film on aluminium electrode is investigated by the electro-modulation method. To avoid the influence of charge injection, a sandwiched cell (Al-Pc-air-ITO) is fabricated. The modulation signal, which depends on the external electric field intensity, is detected.The properties of electro-absorption (EA) and electro-reflectance (ER) signals are analysed. The existence of the surface potential at the metal/organic-material interface induces i f referenced ER signals. As a result, the surface potential built across the vacuum-deposited Pc film on the aluminium electrode is estimated to be 1.23 V.     

酞菁铜/金属薄膜界面电位与光二次谐波特性分析

采用Kalvin探针和光二次谐波 (SecondHarmonicGeneration ,SHG)方法研究了铜酞菁衍生物 (Coppertetra tert butylPhthalocyanine ,CuttbPc )LB(Langmuir Blodgentt)膜与金属 (Al、Au)界面的空间电荷现象与非线性光学效应 .检测到空间电荷感应电场 (SpaceChargeInducedElectricField ,SCIEF)形成的表面电位与金属功函数有关 ,并随膜厚变化趋于饱和值 .尽管酞菁分子为中心对称体系 ,但仍有SHG效应 ,并观察到CuttbPc/Al样品在 12 6 0nm附近有异常增强的SH信号 ,而CuttbPc/Au样品未见该峰 .根据样品结构的物理模型 ,运用电磁场理论分析了界面电介质的非线性极化特性和光学效应产生机制 ,初步认为CuttbPc/Al的SH增强峰源于SCIEF形成的较强表面电位 ,说明SH信号的产生与界面静电现象有密切关系 .     

基于有限元方法的有机场效应晶体管特性模拟与实验验证

采用有限元方法,借助多物理场软件COMSOL模拟了底栅顶接触结构有机场效应晶体管电位和载流子浓度随源漏电压Vds的变化。模拟结果表明,当固定栅压V_g=-10 V时,改变V_(ds)从0~-10 V,对于电位分布,从栅极到源漏电极竖直方向有渐进的变化,而从源极到漏极的水平方向呈现由大到小明显的梯度变化。对于载流子浓度,观察到沟道处从源极向漏极逐渐减少,在靠近漏极的区域减少得尤为明显,而当源漏电压等于栅极电压时,产生夹断现象。进一步将模拟结果与实际制备的器件性能进行了对比,模拟结果与实验数据所显示的分布趋势大体相同,印证了模拟的合理性。由此表明,采用模拟方法分析有机场效应晶体管的器件特性,对于实际制备器件具有重要的指导意义。