Origin of the 420 nm Absorption Band and Effect of Doping Fluorine in PbWO4 Crystals

The electronic structures for three types of PbW04 (PWO) crystals, the perfect PWO, the PWO containing lead vacancy (PWO-Vpb) and fluorine doped PWO crystal (F^-：PWO), are systematically studied within the framework of density functional theory. The computational results show that the Pb 6s state situates below the valence band so that Pb^2 ions are unable to trap holes forming Pb^3 or Pb^4 to compensate for VPb^2-. The hole-trappers in PWO-Vpb are O^2- ions. Two of the longer-bond O^2- ions share a hole forming O2^3-, and four of the longer-bond oxygen ions trap two holes forming an associated color centre [O2^3--Vpb-O2^3-], which may be the origin of the 42Onto absorption band. It is also concluded that the doping of F^- would reduce the band gap and F^- ions substituting for O^2- can effectively restrict the formation of [O2^3--Vpb-O2^3-] and weaken the 42Onm absorption band and hence enhance the scintillation property of PWO.     

D—AKNS族的换位表示

本文根据曹策问教授的想法,求得了与D-AKNS族发展方程相联系的特征值之泛函梯度与Lenard算子对;并由此得到了D-AKNS族非线性发展方程的换位表示。文末还讨论了换位表示与定态D-AKNS方程之间的关系.     

All angle negative refraction with the effective phase index of-1

We theoretically studied a left-hand structure based on a two-dimensional(2D)photonic crystal(PC) with a negative refractive index.The propagation of electromagnetic waves in the proposed PC structure is investigated through dispersion characteristic analysis and numerical simulation of field pattern.The designed PC structure can exhibit all angle negative refraction,and the corresponding effective refractive indices along all directions are almost same and close to the ideal value of-1.A flat lens formed from such a PC has been designed and its imaging properties have been investigated systematically.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

偶函数的一个性质

1性质的引入我们知道奇函数f(x)如果在x=0处有定义,那么就有f(0)=0.其实偶函数也有一个对偶形式的性质:若偶函数f(x)在x=0处有定义且可导,则f′(0)=0.2性质的证明因为偶函数f(x)在x=0处可导,所以limx→0 f(x)-f(0)x=limx→0-f(x)-f(0)x.又∵f(x)=f(-x),x→0-即-x→0 ,∴lim-x→     

变In组分沟道的MM-HEMT材料电子输运特性研究

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用.通过低温下二维电子气横向电阻的量子振荡现象，结合变温度的Hall测量，系统研究了不同In组分沟道MM_HEMT器件中子带电子迁移率和浓度随温度的变化关系.结果表明，沟道中In组分为0.65的样品，材料电学性能最好，In组分高于0.65的样品，严重的晶格失配将产生位错，引起迁移率下降，大大影响材料和器件的性能. 关键词： 变缓冲层高迁移率晶体管 Shubnikov_de Hass 振荡     

Na离子和Cl离子引起He原子直接多重电离过程的研究

利用2～8 MeV的Naq+、Clq+(q=2,3,4,5)轰击氦原子,对碰撞的直接多重电离过程进行研究.实验采用反冲离子-散射离子飞行时间符合技术,通过反冲离子飞行时间谱区分不同价态反冲离子;利用静电偏转和位置灵敏探测技术区分不同电荷态散射离子;结合CAMAC-PC多参数获取系统得到一定价态散射离子所对应的反冲离子电荷态分布谱;经分析该谱得到直接多重电离截面与直接单电离截面之比R21.讨论了R21随入射离子速度和电荷态的变化关系.     

火焰原子吸收光谱法测定蚯蚓中铜、锌、镉和铅

随着工业生产的发展和人们生活水平的不断提高，城市垃圾处理场的重金属含量越来越高。部分重金属通过大气和水进入土壤，由于污染给生物和人类带来危害。大型土壤动物-蚯蚓，是土壤污染中敏感的指示动物，受到国内外学者的重视。因此，通过对蚯蚓的监测来评价土壤的污染程度是常用的方法之一。本法将蚯蚓洗净泥沙，置黑暗处饥饿养殖3天，待其基本排尽粪便，经烘干研磨制成粉，经硝酸-高氯酸消解后，用火焰原子吸收光谱法测定其中的铜锌镉铅含量。方法简便、快速，相对标准偏差为0．5％～3．7％，加标回收率为94．0％～106．0％，获得满意的结果。     

高分子基PTC复合材料的研究及其应用

本文概述了高分子基PTC复合材料最近的研究动态，阐述了其作为热敏材料在自控温加热系统和过流保护元件方面的广泛应用。