一套研究重离子—原子碰撞过程中小角度散射的散射粒子—反冲离子飞行时间谱仪系统

本文报导通过测量离子—原子碰撞过程中反冲离子横向动量的方法获得散射角θ≤10~(-4)rad的单重和多重电离截面,即散射粒子—反冲离子飞行时间谱仪系统。文中将介绍建于兰州大学2×1.7MV串列加速器上的散射粒子—反冲离子飞行时间谱仪系统的机械设计,性能参数,数据获取,电子学框图以及利用1MeV质子轰击氩气时测量反冲氩离子飞行时间谱的试运行实验及结果。     

一套研究重离子—原子碰撞过程中小角度散射的散射粒子—反…

本报导通过测量离子－原子碰撞过程中反冲离子横向动量的方法获得散射角θ≤１０＾－＾４ｒａｄ的单重和多重电离截面，即散射粒子－反冲离子飞行时间谱仪系统。中将介绍建于兰州大学２×１．７ＭＶ串列加速器上的散射粒子－反冲离子飞行间谱仪系统的机械设计，性能参数，数据获取，电子学框图以及利用１ＭｅＶ质子轰击氩气时测量反冲氩离子飞行时间谱的试运行实验及结果。     

离子原子碰撞过程中反冲离子飞行时间谱的蒙特卡罗模拟研究

基于蒙特卡罗方法,建立了程序模拟离子与原子碰撞中的反冲离子飞行时间谱.模拟入射离子束的空间密度分布,原子束密度的空间分布,靶原子的初速度分布, 根据反应几率产生不同电荷态反冲离子,并求出反冲离子飞行时间后,对每次模拟事件根据飞行时间进行累计,就得到反冲离子的飞行时间谱.模拟结果与实验(Ar12+-Ar) 测量到的TOF谱进行了分析比较,并进行了定性讨论     

强扰动能区非全裸Cq+,Oq+(q=1-4)与He原子碰撞过程中截面比的实验研究

利用兰州大学2×1.7MV串列加速器离子-原子碰撞实验终端上产生的单核子能量为20-500 keV的Cq+和Oq+(q=1-4)离子与He原子碰撞.采用符合测量方法和多参数数据获取系统得到了散射离子与反冲离子电荷态的二维谱,从而分别得到直接电离、入射离子俘获电子和入射离子损失电子截面与总截面的截面比Rdirect,Rcapture和Rloss,并对强扰动能区的各个反应道之间竞争关系及同一反应道在不同碰撞体系中所表现出的实验规律进行了比较和定性分析.     

氧离子与氦、氖原子碰撞中转移电离过程的研究

采用位置灵敏探测和散射离子-反冲离子飞行时间测量技术,测量了氧离子与氖和氦原子碰撞过程中转移电离截面与单电子俘获截面之比.通过比较发现测量结果与文献结果的趋势一致,并对测量结果进行了讨论.     

等电荷态离子与He原子碰撞中的转移电离过程研究

采用位置灵敏探测和飞行时间技术测量了等电荷态离子Cq+、Nq+、Oq+、Neq+(q=4,5,6,7)与He原子碰撞中,转移电离截面与单电子俘获截面的比值R.研究了相同q入射的情况下,R与入射离子核电荷数Z的依赖关系,在统计蒸发模型的基础上对实验结果进行了解释.     

中低能非全裸C离子与He原子的碰撞研究

采用反冲离子飞行时间-散射离子位置灵敏符合测量技术，测量了能量范围在0.7v₀—4.4v₀(v₀为玻尔速度)的碳离子C^q+(q=1—4)与He原子碰撞过程不同出射道靶原子的双电离与单电离截面比R，包括入射离子不损失电子(直接电离)的出射道(R_q,q),入射离子俘获一个电子的出射道(R_q,q-1)和入射离子损失一个电子的出射道(R_q,q+1)，并研究了R随入射C离子的能量及电荷态的变化关系.实验表明，对给定电荷态的入射离子，靶原子的双电离与单电离截面比R与出射道有很强的依赖关系，即R_q,q<R_q,q+1<R_q,q-1.直接电离出射道截面比R_q,q与入射离子电荷态几乎无关，而入射离子俘获一个电子的出射道和损失一个电子的出射道靶原子双电离与单电离截面比R_q,q-1和R_q,q+1却与入射离子电荷态有很强的关系.采用原子极化理论和电子屏蔽与反屏蔽作用对实验结果进行了解释. 关键词： 离子-原子碰撞 电离 截面比     

强扰动区C~(q+)离子与He原子碰撞中有效电荷研究

本文利用经典过垒电离模型(Class Over Barrier Ionization)处理100-400ke V/amu强扰动区(q/v1)的不同价态非全裸离子Cq+(q=1-4)与全裸离子H1+,He2+,Li3+与He原子碰撞过程.发现相同价态下,全裸离子的双单电离截面比R21明显低于非全裸离子,原因在于两者的电子结构明显不同.非全裸离子的外壳层电子在碰撞过程中会有一定几率过垒,这在以往的研究中并未考虑.利用模型计算结果与实验数据的比对,估计入射离子第二有效电荷,最终确定入射离子在电离过程中的第一和第二有效电荷.     

高电荷态离子引发氮气分子的解离和碎裂

利用时间和位置灵敏相关的符合装置,实验研究了高电荷态Xeq (q=15-21)离子与N2分子慢碰撞过程的多电子转移过程、N2 离子的解离以及N2q (1相似文献   

高电荷态Arq+与Ne碰撞中入射离子电荷交换截面的研究

报道Arq++Ne(q=8, 9, 11, 12)碰撞体系中多电子转移过程,得到了多组实验测量电荷交换截面数据,讨论入射离子电荷交换截面、反冲离子产生截面与入射离子电荷态、能量以及散射离子电荷态的关系,并且将实验结果与Arq++Ar碰撞体系进行对比研究.在修正分子库仑过垒模型的基础上,对实验现象做了合理的解释.     

Single electron capture in collisions of N^q＋ （q = 5, 6, 7） ions with helium

Close-coupling calculations are carried out for cross sections of the single electron capture in collisions of N^q+ (q = 5, 6, 7) ions with helium atoms in the collision velocity range from 0.3 a.u. to 1.8 a.u. The relative importances of the single ionization (SI) to the single capture (SC) are investigated for the N^q+ (q = 5, 6, 7) projectiles, respectively. The SI/SC cross section ratio for the N⁷⁺ projectile obtained from our calculations is in excellent agreement with the experimental data. The ratio curves also show us distinct behaviours when the charge of the projectile is different. The partial electron capture cross sections for different projectiles indicate that the electron on the target He atom tends to be captured by the projectile into its lower orbital of the outer shell with the decreasing projectile charge.     

Ionization and single electron capture in collision of highly charged Ar16+ ions with helium

This paper uses the two-centre atomic orbital close-coupling method to study the ionization and the single electron capture in collision of highly charged Ar^16＋ ions with He atoms in the velocity range of 1.2-1.9 a.u.. The relative importance of single ionization （SI） to single capture （SC） is explored. The comparison between the calculation and experimental data shows that the SI/SC cross section ratios from this work are in good agreement with experimental data. The total single electron ionization cross sections and the total single electron capture cross sections are also given for this collision. The investigation of the partial electron capture cross section shows a general tendency of capture to larger n and l with increasing velocity from 1.2 to 1.9 a.u..     

Multiple ionization of argon accompanied by electron loss and capture of 0.22-6.35 MeV C^q＋ ions

In this paper a projectile ions recoil ions coincidence technique is employed to investigate the target ionization and projectile charge state changing processes in the collision of 0.22-6.35 MeV Cq^＋ （q = 1 - 4） ions with argon atoms. The partial cross section ratios of the double, triple, quadruplicate ionization to the single ionization （or the single capture） of argon associated with single electron loss （or single electron capture） by the projectile are measured and compared with the previous experimental results. In the present experiment, it is observed that the ratios of ionization cross sections R associated with single loss and single capture depend strongly on the projectile charge state and vary significantly with different reaction channels as impact energy increases. In addition, this paper gets empirical scaling laws for the ionization cross section ratios R corresponding to the projectile single loss and finds that the ratios of the double ionization to the single ionization associated with single electron capture remain constant in the present energy range.     

Photoluminescence and electroluminescence investigations at Ge-rich SiO2 layers

Strong blue and violet photo (PL) and electroluminescence (EL) at room temperature was obtained from SiO₂-films grown on crystalline Si, which were either single (SI) or double implanted (DI) with Ge ions and annealed at different temperatures. The PL spectra of Ge-rich layers reach a maximum after annealing at 500–700°C for DI layers or 900–1000°C for SI layers, respectively. Both, PL and EL of 500 nm thick Ge-rich layers are easily visible by the naked eye at ambient light due to their high intensity. Based on excitation spectra we tentatively interpret the blue PL as due to the oxygen vacancy in silicon dioxide.

The EL spectrum of the Ge-implanted oxide correlates very well with the PL one and shows a linear dependence on the injected current over three orders of magnitude. For DI layers much higher injection currents than for SI layers can be achieved. An EL efficiency in the order of 10⁻⁴ for Ge⁺-implanted silicon dioxide was determined.     

Investigation of transfer ionization in collisions of partially stripped carbon ions with helium at low to intermediate velocities

The ratios of transfer ionization （TI） to single-electron capture （SC） cross sections have been measured for the collisions of partially stripped C^q＋ ions （q = 1-4） with He. The collision velocity ranges from 0.7 to 4.4 vo （vo is the Bohr velocity）. The projectile-ion and recoil-ion coincidence technique is used to separate the processes of TI and SC. The ratios reach the maximum when the velocity is about 3.7 vo. This can be explained qualitatively based on the two-step mechanism. The experimental results are also compared with the results calculated using the classical trajectory Monte Carlo （CTMC） method. The CTMC results are in agreement with the experimental data basically. The discrepancies in higher velocity region are interpreted by the effective charge effect.     

非全裸离子-原子碰撞中的多重电离研究

利用加速器提供的非全裸重离子束 (q=1 - 4)轰击氦、氖和氩原子 ,研究了由非全裸离子引起原子多重电离的有效电荷效应和电荷交换效应 .提出用一个有效电荷来等价描述非全裸入射离子对靶原子的作用 ,将描述全裸离子 -原子碰撞过程的物理模型推广到处理非全裸离子 -原子碰撞过程 ,采用轨道贯穿模型对有效电荷的内在物理机制进行了解释 ,提出一种新的理论方法将多重电离中俄歇过程的贡献予以扣除 .通过研究发现 ,扣除俄歇过程贡献后 ,多重电离截面随入射离子q/ v的变化与多步过程的预言相符.The partially stripped C q+ , O q+ and F q+ ions (q=1-4) delivered by a 2×1.7 MV tandem accelerator were employed to bombard He, Ne and Ar targets. The cross section ratios of multiple ionization to single ionization were measured for different collision systems by using time of flight technique. The effective charge effects and charge exchange processes were studied. By using an effective charge q eff , the multiple ionization processes induced by partially stripped ions could...     

Significant redistribution of Ce 4d oscillator strength observed in photoionization of endohedral Ce@C82+ ions

Mass-selected beams of atomic Ceq+ ions (q = 2, 3, 4), of C82+ and of endohedral Ce@C82+ ions were employed to study photoionization of free and encaged cerium atoms. The Ce 4d inner-shell contributions to single and double ionization of the endohedral Ce@C82+ fullerene have been extracted from the data and compared with expectations based on theory and the experiments with atomic Ce ions. Dramatic reduction and redistribution of the ionization contributions to 4d photoabsorption is observed. More than half of the Ce 4d oscillator strength appears to be diverted to the additional decay channels opened by the fullerene cage surrounding the Ce atom.     

Production of recoil ions He^i＋ accompanied by single electron loss of 0.2-7 MeV C^q＋ and 0.25-5 MeV O^q＋ （q = 1- 4） ions

Target ionization accompanied with projectile electron loss is investigated for 0.2-7 MeV C^q＋ （q = 1 - 4） with He and 0.25-5 MeV O^q＋ （q = 1 - 4） with He collisions. For projectile single-electron loss channel, the He double-to-single ionization ratio R is nearly independent of projectile charge state but dependent on the nuclear charge of projectile Zp. The results are analysed with atomic structure qualitatively. So far there have not existed the experimental data comparable with our results, to our knowledge. The ratio R is interpreted in terms of the two-step mechanism. This analysis agrees well with similar experiments in the literature.     

Excitation-autoionization cross-sections and rate coefficients for Ge-like ions

Results of cross-section and rate coefficient calculations for electron impact direct and indirect ionization of ions belonging to the GeI isoelectronic sequence (ground 3d104s24p2) are presented. The cross-sections are given at near threshold energies for the five ions Kr4+, Mo10+, Xe22+, Pr27+ and Dy34+. The rate coefficients are computed for all the ions from Kr4+ to U60+ in the GeI sequence at seven electron temperatures (kTe = 0.1EI, 0.3EI, 0.5EI, 0.7EI, EI, 2EI and 10EI, where EI is the first ionization energy). The calculations include the contribution of direct ionization (DI) calculated with the Lotz formula approximation and the contributions of excitation-autoionization (EA) calculated in the framework of the distorted wave (DW) approximation for the 4s-nl, 3d-nl and 3p-nl resonant inner-shell excitations. The ionization enhancement due to the EA channels is shown as a function of Z along the GeI isoelectronic sequence.     

近玻尔速度氙离子激发钒的K壳层X射线

测量了2.4—6.0 MeV Xe~(20+)离子轰击V靶表面过程中辐射的X射线.计算了V的K壳层X射线发射截面,并将实验结果与平面波恩近似、ECPSSR、两体碰撞近似的理论计算进行了对比.讨论了近玻尔速度非对称碰撞过程中,BEA模型估算高电荷态重离子激发内壳层电离的修正因素.结果表明,综合考虑库仑偏转和有效电荷态修正后,BEA理论与实验结果符合较好.