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We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm) is much thinner than before(~100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-p... 相似文献
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We study a gate-tunable superconducting qubit(gatemon) based on a thin InAs-Al hybrid nanowire.Using a gate voltage to control its Josephson energy,the gatemon can reach the strong coupling regime to a microwave cavity.In the dispersive regime,we extract the energy relaxation time T1~0.56 μs and the dephasing time T2*~0.38 μs.Since thin In As-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zer... 相似文献
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