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用脉冲激光沉积法制备了非金属Te掺杂的钙钛矿锰氧化物La0.82Te0.18MnO3单晶薄膜.该薄膜从83 K升温至373 K过程中发生金属-绝缘体相变,转变点温度为283 K.其电阻率在T<TMI时符合电子-电子、电子-磁振子散射公式;在T>TMI时为小极化子输运.薄膜在低温段连续激光(波长为532 nm,40 mW)作用下电阻率显著增大,电阻变化率在253 K达到最大值51.1%,该变化率远大于相同条件下的空穴掺杂材料;在高温段产生了较小的光电导,电阻变化率小于10%.这些现象主要与激光激励下自旋系统和小极化子的变化有关.La0.82Te0.18MnO3薄膜在激光诱导下具有明显的与自旋相关的弛豫现象.激光开始作用时薄膜电阻率随时间的变化符合指数关系.
关键词:
0.82Te0.18MnO3薄膜')" href="#">La0.82Te0.18MnO3薄膜
光诱导
输运特性
电子掺杂 相似文献
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Naphthyl-α-diimine nickel complexes with systematically varied ligand sterics, activated by modified methylaluminoxane(MMAO), were tested in the polymerization of higher α-olefin(1-hexene, 1-decene and 1-hexadecene) under suitable conditions. The polymerization results indicated the possibility of precise microstructure control, depending on catalyst structure, polymerization temperature, monomer concentration and types of monomers, which in turn strongly affects the resultant polymer properties. Naphthyl-α-diimine nickel complex bearing chiral bulky sec-phenethyl groups in the o-naphthyl position showed good catalytic activity, and resulted in branched polymers(42-88/1000 C) with high molecular weights(M_n:(4.3-15.2) × 10~4 g·mol~(-1)) and narrow molecular weight distribution(M_w/M_n = 1.13-1.29, RT), which suggested a living polymerization. The increasing steric hindrance of catalyst leads to enhance insertion for 2,1-insertion of α-olefin and the chain-walking reaction. 相似文献
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Photoinduced resistance change ( △ R/R) in an oxygen-deficient La0.9Sr0.1MnO3-δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75 ns are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW. It is also found that △ R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic devices. 相似文献
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The transport properties and magnetoresistance of electron-doped manganate / insulator composites (La0.8Te0.2MnO3)1 - x/(ZrO2)x (x=0, 0.3, and 0.5) are investigated. It is found that the metal-insulator transition temperature of this system shifts to a lower value as the ZrO2 content increases. The introduction of ZrO2 enhances both the domain scattering and electron relative scattering in the metal transport region. In the adiabatic small polaron hopping transport region, the thermal activation energy seems invariable regardless of the ZrO2 content. The application of a magnetic field promotes the charge transportation capabilities of the composites, and the magnetoresistance is enhanced with an increase of the ZrO2 content. This could be attributed to the more remarkable modification effect of magnetic field on ordering degree in the composites than in pure La0.8Te0.2MnO3. 相似文献
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用脉冲激光沉积法在(111)Si衬底上成功制备了高度择优取向的Fe3O4薄膜.电阻-温度关系表明Fe3O4薄膜的Verwey转变(TV)约在122 K,低温段(TV)输运特征满足Mott变程跳跃模型,高温段(T>TV)为小极化子输运.激光作用下的光电导实验发现,在整个温区表现为光致电阻率减小,而且低温段的电阻变化率比高温段要大很多.分析认为Fe3O4薄膜的光致电阻率变化主要与激光激发t2g电子的转移有关.
关键词:
3O4薄膜')" href="#">Fe3O4薄膜
小极化子
光诱导特性 相似文献
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利用射频磁控溅射法在(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (001)单晶基底上生长了镧掺杂BaSnO3外延薄膜. 通过Hall效应和热电势测量证实了镧掺杂BaSnO3薄膜具有n型简并半导体特征, 并且基于载流子浓度和Seebeck系数计算出电子的有效质量为0.31m0 (m0为自由电子质量). 镧掺杂BaSnO3薄膜在可见波段具有良好的透明性(透过率大于73%). 基于介电模型对薄膜的透过率曲线进行拟合, 从拟合结果中不仅得到了薄膜的厚度为781.2 nm, 能带宽度为3.43 eV、 带尾宽度为0.27 eV和复光学介电常数随波长的变化规律, 而且也强力地支持了基于电学参数计算电子有效质量的正确性. 相似文献
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通过固相反应烧结法成功制备了层状钙钛矿La1.3Sr1.7Mn2-xCuxO7多晶,主要研究了其磁电特性.结果表明,样品为Sr3Ti2O7型钙钛矿结构.随着温度的降低,其磁性经历了一个很复杂的转变过程.当x=0时,在T*=231 K出现二维短程铁磁有序,在Tc=114 K出现三维长程铁磁有序,在TN=56 K出现倾斜的反铁磁转变.当x=0.05时,Cu替代使得T*,Tc和TN减小.其电特性表明,La1.3Sr1.7Mn2-xCuxO7多晶呈现出双峰现象,这是由于钙钛矿结构锰氧化物共生现象造成的.虽然5%Cu替代,降低了金属一绝缘体转变温度,但是却增强了磁电阻效应. 相似文献
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界面效应在提升异质结构材料的多铁性能方面有着重要的作用. 本文采用脉冲激光沉积技术在SrTiO3(STO)基片上制备了Bi0.8Ba0.2FeO3(BBFO)/La2/3Sr1/3MnO3(LSMO)异质结. X-射线衍射图谱表明异质结呈现单相外延生长, 利用高分辨透射电镜进一步证实了BBFO为四方相结构. X-射线光电子能谱证实异质结中只存在Fe3+ 离子, 没有产生价态的变化, 揭示了异质结铁电和铁磁性的增强与BBFO/LSMO的界面有关. 同时, 测试了磁电阻(MR)和磁介电(MD), 当磁场强度为0.8 T, 温度为70 K时, MR约为-42.2%, MD约为21.2%. 并且发现在180 K时出现磁相的转变. 实验结果揭示出异质界面效应在提升材料的多铁性和磁电耦合效应方面具有超常的优点, 是加快多铁材料实际应用的有效途径. 相似文献