Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films

Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300℃. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5 ×10^-4 Ω·cm is obtained from the film annealed at 400℃in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.     

GaAs层引入InAs/Inp量子点有序生长机制的研究

本文对张应变GaAs层引入使InAs/Inp量子点有序化排列的机制进行了分析.为提高InAs/Inp自组装量子点特性提供了理论依据.     

等离子体增强MOCVD法生长ZnO薄膜

利用等离子体增强MOCVD法生长出 ZnO薄膜，用X射线衍射谱观察到位于 2θ34．56°处（0002）的衍射峰，表明ZnO沿c方向呈柱状生长．通过荧光光谱，观察到来自于激子的高强度的近带边紫外光发射（375um）．紫外发射光强度与深能级复合发射光强度比高达 193，显示出材料的高质量，并通过原子力显微镜加以验证．为了实现高阻ZnO薄膜，利用高温富氧分段退火和用N2 气进行掺氮两种方法生长高阻ZnO薄膜．结果表明，电阻率由0．65 Ω·cm分别升高到1100 Ω·cm（分段退火）和5×104Ω·cm（掺氮）．进一步比较发现，掺氮的样品不仅电阻率高，而且光荧光特性好，显示出更高的薄膜质量．     

原子辅助光力系统中快慢光的量子调控

随着纳米科技以及半导体技术的迅猛发展,光力诱导透明、快慢光和光存储以及其他在光力系统中发现的量子光学和非线性光学效应成为人们目前研究的热点.本文将薄膜腔光力系统同被束缚在腔中的二能级冷原子系综相耦合,通过直接在薄膜振子上引入弱辅助驱动场来研究该原子辅助光力系统中原子和相位对量子相干性质及其快慢光的调控.经过分析发现,通过改变辅助驱动场的强度可直接实现对光力诱导透明窗口深度的调控,通过改变辅助场与探测场之间的相位差,可实现输出的探测场在"吸收"、"透明"和"增益"之间相互转换,进而对弱探测场进行动态调控实现光开关.与此同时,还发现系统的群延迟时间随相位差的改变呈周期性变化.通过调节相位差及原子数,不但可以改变群延迟时间,还可实现快慢光之间的相互转换.     

Fabrication of blue LEDs on big chips

In this paper, the GaN based epitaxial wafer is fabricated on big 1 mmx1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125? 210, 000 cd/m2 and 1.5 1m, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.     

Preparation and Characterization of Transparent Conductive Nb-Doped ZnO Films by Radio-Frequency Sputtering

Niobium-doped ZnO （NZO） transparent conductive films are deposited on glass substrates by rt sputtering at 300℃. Effects of sputtering power on the structural, morphologie, electrical, and optical properties of NZO films are investigated by x-ray diffraction （XRD）, field emission scanning electron microscopy （FESEM）, Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the （002） crystallographic direction. The minimum resistivity of 4.0×10^-4Ω·cm is obtained from the film grown at the sputtering power of 170W. The average optical transmittance of the films is over 90%.     

非致冷In0.53Ga0.47 As/InP红外探测器研究

采用LPMOCVD技术生长了InGaAs红外探测器器件结构材料,其晶格失配为2.19×10-4.利用锌扩散制备探测器单元器件,光谱响应范围为0.90～1.70μm,在1.95V偏压下,暗电流为5.75×10-5A,在反向偏压为-5V时,电容为6.96×10-12F.探测器波段探测率为2.08×1011cmHz1/2W-1.