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In this paper, the GaN based epitaxial wafer is fabricated on big 1 mmx1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125? 210, 000 cd/m2 and 1.5 1m, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source. 相似文献
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RF磁控溅射条件对ZnO薄膜结构的影响 总被引:1,自引:0,他引:1
采用RF磁控溅射法在Si(001)衬底上制备ZnO薄膜。研究发现了工作中溅射频率、氧气和氩气流量比对样品结构的影响。样品的XRD图谱显示了强的(002)ZnO衍射峰,表明ZnO薄膜为c轴高取向生长。比较不同条件下制备的ZnO薄膜,研究发现当氧气和氩气的流量比相同时,随着溅射功率的增加,样品的(002)衍射峰增强,半高全宽变小。而当溅射功率相同时,随着氧气和氩气的流量比增加,样品的(002)衍射峰也增强,半高全宽同样变小。此外,本文还分析了溅射工艺和薄膜晶体质量之间关系,发现在相同的功率条件下,溅射率低时晶粒尺寸更大且薄膜的结晶性更好。 相似文献
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