Theoretical Study on the Structure and Stability of Si5X （X = Li, Be, B, C, N, O, F, Na, Mg, Al, Si, P, S, Cl） Clusters

1 INTRODUCTION In the later 60s of last century, silicon substituted for germanium to present as mainstream in semicon- ductor. The semi-conductive devices made by silicon have many advantages, for example, refractory pro- perty, high radioresistance, simple and stable process- ing technic, high machinability and low cost. So it was widely used to manufacture large power appara- tuses, for instance, digit and linear integrated circuit, large scale integrated circuit (LSI), etc. Thus, th…     

Diode-pumped laser performance of Tm:Sc_2SiO_5 crystal at 1971 nm

The 4-at.% Tm:Sc_2SiO_5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave(CW) laser output of(100)-cut Tm:SSO with the dimensions of 3 mm×3 mm×3 mm under laser diode(LD)-pumping is realized. The full width at half maximum(FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW.