Theoretical Study on the Structure and Stability of Si4X（X=Li, Be, B, C, N, O, F） Clusters

1 INTRODUCTION Silicon is an important kind of semiconductormaterial having been used to produce many sorts ofapparatus, digital and linear integrated circuit andLarge Scale Integrated circuit (LSI), and its clustershave drawn many scientists’ atten…     

Crosslinked carboxymethyl cellulose-sodium borate hybrid binder for advanced silicon anodes in lithium-ion batteries

Hybrid gel binder with deformable network and strong adhesive capability on silicon particles can effectively accommodate the large volume change of silicon anodes upon cycling, leading to an excellent cycling stability and high Coulombic efficiency.     

120 mm Single-crystalline perovskite and wafers: towards viable applications

As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafers will revolutionize its broad applications in photovoltaics, optoelectronics, lasers, photodetectors, light emitting diodes(LEDs), etc. Here we report a method to grow large single-crystalline perovskites including single-halide crystals: CH3NH3PbX3(X=I, Br, Cl), and dual-halide ones:CH3NH3Pb(ClxBr1.x)3 and CH3NH3Pb(BrxI1.x)3, with the largest crystal being 120 mm in length. Meanwhile, we have advanced a process to slice the large perovskite crystals into thin wafers. It is found that the wafers exhibit remarkable features:(1)its trap-state density is a million times smaller than that in the microcrystalline perovskite thin films(MPTF);(2) its carrier mobility is 410 times higher than its most popular organic counterpart P3HT;(3) its optical absorption is expanded to as high as910 nm comparing to 797 nm for the MPTF;(4) while MPTF decomposes at 150 °C, the wafer is stable at high temperature up to270 °C;(5) when exposed to high humidity(75% RH), MPTF decomposes in 5 h while the wafer shows no change for overnight;(6) its photocurrent response is 250 times higher than its MPTF counterpart. A few electronic devices have been fabricated using the crystalline wafers. Among them, the Hall test gives low carrier concentration with high mobility. The trap-state density is measured much lower than common semiconductors. Moreover, the large SC-wafer is found particularly useful for mass production of integrated circuits. By adjusting the halide composition, both the optical absorption and the light emission can be fine-tuned across the entire visible spectrum from 400 nm to 800 nm. It is envisioned that a range of visible lasers and LEDs may be developed using the dual-halide perovskites. With fewer trap states, high mobility, broader absorption, and humidity resistance, it is expected that solar cells with high stable efficiency maybe attainable using the crystalline wafers.     

Fixed—node Quantum Monte Carlo：A Novel Approach

The fixed-node quantum Monte Carlo (FNQMC)1,2 method has made it possible to calculate the electronic structure of relatively large molecular systems. These large systems range from positron complexes [NH2, Ps] with ～10 electrons to C20 isomers with 120 electrons, silicon crystal structures of 250 atoms and 1000 valence electrons. In the practical calculation for FNQMC method, in general, a minimal basis set of Slater-type atomic orbital (STO) and Jastrow functions are taken to cons…     

Easy Fabrication of Dense Ceramic Membrane for Oxygen Separation

During the past decade, dense-type oxygen-permeable ceramic membranes have received considerable attention both in the fields of scientific research and industrial application1, 2. Such membranes have mixed oxygen-ionic and electronic conductivity, and they can permeate oxygen at high temperature under an oxygen gradient without the need of outside connecting line and electrodes. Envisioned applications range from small scale oxygen pumps for medical use to large scale integrated gasification …     

Analysis of silicon-based integrated photovoltaic–electrochemical hydrogen generation system under varying temperature and illumination

Last decade witnessed tremendous research and development in the area of photo-electrolytic hydrogen generation using chemically stable nanostructured photo-cathode/anode materials. Due to intimately coupled charge separation and photo-catalytic processes, it is very difficult to optimize individual components of such system leading to a very low demonstrated solar-to-fuel efficiency(SFE) of less than 1%.Recently there has been growing interest in an integrated photovoltaic–electrochemical(PV–EC) system based on Ga As solar cells with the demonstrated SFE of 24.5% under concentrated illumination condition.But a high cost of Ga As based solar cells and recent price drop of poly-crystalline silicon(pc-Si) solar cells motivated researchers to explore silicon based integrated PV–EC system. In this paper a theoretical framework is introduced to model silicon-based integrated PV–EC device. The theoretical framework is used to analyze the coupling and kinetic losses of a silicon solar cell based integrated PV–EC water splitting system under varying temperature and illumination. The kinetic loss occurs in the range of 19.1%–27.9% and coupling loss takes place in the range of 5.45%–6.74% with respect to varying illumination in the range of 20–100 m W/cm~2. Similarly, the effect of varying temperature has severe impact on the performance of the system, wherein the coupling loss occurs in the range of 0.84%–21.51% for the temperature variation from 25 to 50 °C.     

From Intercalation to Alloying Chemistry: Structural Design of Silicon Anodes for the Next Generation of Lithium-ion Batteries

Lithium-ion batteries,first commercialized in 1991,have been thriving for the past 30 years and become an important basis for portable electronics and electric vehicles.However,this first generation of lithium-ion batteries built on the intercalation materials has limited energy density and can not meet the increased demand of various applications.Thus,a transition from intercalation to alloying chemistry for anodes is on call.Silicon,as the most attractive alloying anode material,has been on the research focus for next-generation highenergy density battery.Alloying mechanism benefits silicon a large capacity while brings silicon the challenge of volume expansion.This article discusses the structure design strategies to address the issues of large volume change and interface instability.     

A Facile Strategy for Non-fluorinated Intrinsic Low-k and Low-loss Dielectric Polymers: Valid Exploitation of Secondary Relaxation Behaviors

High-performance low-k and low-loss circuit materials are urgently needed in the field of microelectronics due to the upcoming FifthGeneration Mobile Communications Technology(5 G Technology).Herein,a facile design strategy for non-fluorinated intrinsic low-k and low-loss polyimides is reported by fully considering the secondary relaxation behaviors of the polymer chains.A new amorphous non-fluorinated polymer(TmBPPA)with a k value of 2.23 and a loss tangent lower than 3.94×10^-3 at 104 Hz has been designed and synthesized,which to the best of our knowledge is the lowest value amongst the non-fluorinated and non-porous polymers reported in literature.Meanwhile,TmBPPA exhibits excellent overall properties,such as excellent thermostability,good mechanical properties,low moisture absorption,and high bonding strength.As high-performance flexible circuit materials,all these characteristics are highly expected to meet the present and future demands for high density,high speed,and high frequency electronic circuit used in 5 G wireless networks.     

Study of the Electroless Silver Seed Formation on Silicon Surface

The silver seed on silicon was prepared through aqueous I-IF and AgNO3 solution at room temperature. In order to explore the formation process of silver seed on silicon, the methods of open circuit potential with time （OCP-t）, anodic stripping sweep voltammetry （ASV） and scanning tunneling microscope （STM） were used in this work. The procedure of silver nucleus growing into large particles was explained by electro-negativity. The growth mechanism of silver seed on silicon has been presented： at first, the silver monolayer and multilayer firstly grows onto silicon without fully covering the surface at the expense of silicon etching due to the silver seed attracting the electron from silicon, after that, the monolayer coalesces together, forming continuous grain film with some silver atoms diffusing into the silicon and the multilayer still grows thick simultaneously.     

Well-balanced ambipolar diketopyrrolopyrrole-based copolymers for OFETs,inverters and frequency doublers

Conjugated polymers with well-balanced ambipolar charge transport is essential for organic circuits at low cost and large area with simplified fabrication techniques. Aiming at this point, herein, a novel asymmetric thiophene/pyridine-flanked diketopyrrolopyrrole-based copolymer(PPy TDPP–2 FBT) is designed and synthesized. Due to the effect of incorporating F atoms on molecular energy alignment and conjugation conformation, the PPy TDPP–2 FBT copolymer exhibits typical V-shaped ambipolar field-effect transfer characteristics with well-balanced hole and electron mobilities of 0.64 and 0.46 cm~2 V~(-1) s~(-1), respectively.Furthermore, organic digital and analog circuits such as inverters and frequency doublers are successfully constructed based on solution-processed films of the PPy TDPP–2 FBT copolymers which show a typical circuit operating mode with a high gain of 133 due to the well-balanced electrical properties. In addition, PPy TDPP–2 FBT-based devices also demonstrate good stability and batch repeatability, suggesting their great potential applications in organic integrated electronic circuits.     

杂硼原子簇XB6+ (X=C,Si, Ge,Sn, Pb)的稳定性和芳香性

利用从头算MP2方法和密度泛函理论B3LYP和B3PW91方法, 研究了杂硼原子簇XB₆⁺ (X=C, Si, Ge, Sn, Pb)的结构、稳定性及化学键合情况. 对C, Si, Ge, B使用6-311+G(d)基组, 对Sn和Pb使用LANL2DZ赝势基组. 研究结果表明, 具有C_s对称性的假平面XB₆⁺ (X=C, Si, Ge, Sn, Pb)结构是势能面上的全域极小点, 其稳定性要高于C_6v对称性的锥形结构和C₂对称性的假锥形结构. 在B3LYP水平上, 对这些异构体的势能面的极小点进行了自然键轨道(NBO)的分析; 对最稳定构型的最高占据分子轨道(HOMO)和最低空轨道(LUMO)能级差、分子轨道(MO)和核独立化学位移(NICS)进行了计算和讨论. 分析了杂原子和硼原子间、相邻硼原子间的键合情况, 讨论了最稳定构型的芳香性质.     

Si4X(X=C,N,O,Si,P,S)原子簇结构的理论研究

在密度泛函B3LYP/6-311G*水平上, 对具有C3v对称的Si4X (X = C, N, O, P, S)原子簇进行了几何构型优化计算, 并讨论它们的热力学稳定性、动力学活性、Mulliken布居、SiX键长、占据价轨道的对称性以及HOMO能级位置等周期递变规律。     

Structural and electronic properties of Al12X+ (X=C, Si, Ge, Sn, and Pb) clusters

Using the first-principles method with the generalized gradient approximation, the authors have studied the structural and electronic properties of Al(12)X(+) (X=C, Si, Ge, Sn, and Pb) clusters in detail. The ground state of Al(12)C(+) is a low symmetry C(s) structure instead of an icosahedron. However, the Si, Ge, Sn, and Pb atom doped cationic clusters favor icosahedral structures. The ground states for Al(12)Si(+) and Al(12)Ge(+) are icosahedra, while the C(5nu) structures optimized from an icosahedron with a vertex capped by a tetravalent atom have the highest binding energy for Al(12)Sn(+) and Al(12)Pb(+) clusters. The I(h) structure and the C(5nu) structure are almost degenerate for Al(12)Ge(+), whose binding energy difference is only 0.03 eV. The electronic properties are altered much by removing an electron from the neutral cluster. The binding strength of a valence electron is enhanced, while the binding energy of the cluster is reduced much. Due to the open electronic shell, the band gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital are approximately 0.3 eV for the studied cationic clusters.     

First‐principles study of molecular hydrogen dissociation on doped Al12X (X = B,Al, C,Si, P,Mg, and Ca) clusters

Inspired by the concept of superatom via substitutionally doping an Al₁₃ magic cluster, we investigated the H₂ molecule dissociation on the doped icosahedral Al₁₂X (X = B, Al, C, Si, P, Mg, and Ca) clusters by means of density functional theory. The computed reaction energies and activation barriers show that the concept of superatom is still valid for the catalysis behavior of doped metal clusters. The hydrogen dissociation behavior on metal clusters characterized by the activation barrier and reaction energy can be tuned by controllable doping. Thus, doped Al₁₂X clusters might serve as highly efficient and low‐cost catalysts for hydrogen dissociation. © 2009 Wiley Periodicals, Inc. J Comput Chem, 2009     

Geometries,vibrational frequencies,and electron affinities of X2Cl (X=C,Si,Ge) clusters

Ab initio quantum chemical calculations have been performed on X₂Cl^? and X₂Cl (X = C, Si, Ge) clusters. The geometrical structures, vibrational frequencies, electronic properties and dissociation energies are investigated at the Hartree–Fock (HF), Møller–Plesset second‐ and fourth‐order (MP2, MP4), CCSD(T) level with the 6‐311+G(d) basis set. The X₂Cl (X = C, Si, Ge) and X₂Cl^? (X = Si, Ge) take a bent shape obtained at the ground state, while C₂Cl^? has a linear structure. The impact on internal electron transfer between the X₂Cl and the corresponding anional clusters is studied. The three different types of electron affinities (EAs) at the CCSD(T) are reported. The most reliable adiabatic electronic affinities, obtained at the CCSD(T)/cc‐pvqz level of theory, are predicted to be 3.30, 2.62, and 1.98 eV for C₂Cl, Si₂Cl, and Ge₂Cl, respectively. The calculated EAs of C₂Cl and Ge₂Cl are in good agreement with theoretical results reported. The correlation effects and basis sets effects on the geometrical structures and dissociation energies are discussed. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007     

Gas-phase diastereoselectivity of secondary 5-substituted (X)-adamant-2-yl (X = F, Si(CH(3))(3)) cations

Secondary 5-X-adamant-2-yl cations IX (X = F, Si(CH3)3) have been generated in the gas phase (total pressure = 760 Torr) from protonation-induced defluorination of epimeric 2-F-5-X-adamantanes 1X and their kinetic diastereoselectivity toward CH318OH investigated in the 40-160 degrees C range. The experimental results indicate that the facial selectivity of IX is insensitive to the composition of the starting 1X epimers as well as to the presence and the concentration of a powerful base (N(C2H5)3). This kinetic picture, supported by B3LYP/6-31G* calculations, is consistent with a single stable pyramidalized structure for IX, that is, (Z)-5-F-adamant-2-yl (I(Z)F) and (E)-5-Si(CH3)3-adamant-2-yl cations (I(E)Si). The temperature dependence of the IX diastereoselectivity lends support to the intermediacy of noncovalent adducts [IX*CH318OH], characterized by a specific C2-H+...O18(H)CH3 hydrogen bonding interaction. Their conversion to the covalently bonded O-methylated (Z)- (II(Z)X) and (E)-5-X-adamantan-2-ols (II(E)X; X = F, Si(CH3)3) is governed by activation parameters, whose magnitude depends on the specific IX face accommodating CH318OH. The gas-phase diastereoselectivity of IX toward CH318OH is compared to that exhibited in related gas-phase and solution processes. The emerging picture indicates that the factors determining the diastereoselectivity of IX toward simple nucleophiles in the gaseous and condensed media are completely different.     

平面五配位硅、 锗XBe5H6(X=Si,Ge)团簇

采用密度泛函理论PBE0方法, 在aug-cc-pVTZ水平上理论预测了含平面五配位硅和锗原子的XBe₅H₆ (X=Si, Ge)团簇. 势能面系统搜索及高精度量化计算表明, 它们均为全局极小结构. XBe₅H₆(X=Si, Ge)团簇整体呈完美的扇形结构: Si/Ge原子被5个金属Be原子配位; 4个H原子以桥基方式与Be原子相键连, 剩余的2个 H原子以端基方式与两端的Be原子成键. 化学键分析表明, XBe₅H₆(X=Si, Ge) 团簇中XBe₅单元具有完全离域的1个π及3个σ键, 外围铍氢间形成4个Be—H—Be 三中心二电子(3c-2e)键及2个定域的Be—H键. XBe₅单元上离域的2π及6σ电子赋予体系π和σ双重芳香性, 并使Si/Ge原子满足八隅律（或八电子规则）. 能量分解-化学价自然轨道分析揭示, Si/Ge和Be₅H₆之间主要为电子共享键.     

Hydrogen bridging in the compounds X2H (X=Al,Si,P,S)

X2H hydrides (X=Al, Si, P, and S) have been investigated using coupled cluster theory with single, double, and triple excitations, the latter incorporated as a perturbative correction [CCSD(T)]. These were performed utilizing a series of correlation-consistent basis sets augmented with diffuse functions (aug-cc-pVXZ, X=D, T, and Q). Al2H and Si2H are determined to have H-bridged C2v structures in their ground states: the Al2H ground state is of 2B1 symmetry with an Al-H-Al angle of 87.6 degrees, and the Si2H ground state is of 2A1 symmetry with a Si-H-Si angle of 79.8 degrees. However, P2H and S2H have nonbridged, bent Cs structures: the P2H ground state is of 2A' symmetry with a P-P-H angle of 97.0 degrees, and the S2H ground state is of 2A' symmetry with a S-S-H angle of 93.2 degrees. Ground state geometries, vibrational frequencies, and electron affinities have been computed at all levels of theory. Our CCSD(T)/aug-cc-pVQZ adiabatic electron affinity of 2.34 eV for the Si2H radical is in excellent agreement with the photoelectron spectroscopy experiments of Xu et al. [J. Chem. Phys. 108, 7645 (1998)], where the electron affinity was determined to be 2.31+/-0.01 eV.     

Mechanism of abstraction reactions of dimetallenes (R2X=XR2; X = C, Si, Ge, Sn, Pb) with halocarbons: a theoretical study

Potential energy surfaces for the abstraction reactions of dimetallenes with halocarbons have been studied using density functional theory (B3LYP). Five dimetallene species, (SiH(3))(2)X=X(SiH(3))(2), where X = C, Si, Ge, Sn, and Pb, have been chosen in this work as model reactants. The present theoretical investigations suggest that the relative dimetallenic reactivity increases in the order C=C < Si=Si < Ge=Ge < Sn=Sn < Pb=Pb. That is to say, for halocarbon abstractions there is a very clear trend toward lower activation barriers and more exothermic reactions on going from C to Pb. Moreover, for a given dimetallene, the overall barrier heights are determined to be in the order CF(4) > CCl(4) > CBr(4) > CI(4). That is, the heavier the halogen atom (Y), the more facile its abstraction from CY(4). Halogen abstraction is always predicted to be much faster than the abstraction of a CY(3) group irrespective of the dimetallene or halocarbon involved. Our model conclusions are consistent with some available experimental findings. Furthermore, both a configuration mixing model based on the work of Pross and Shaik and bonding dissociation energies can be used to rationalize the computational results. These results allow a number of predictions to be made.