Low temperature testing and neutron irradiation of a swept charge device on board the HXMT satellite

We present the low temperature testing of an SCD detector, investigating its performance such as readout noise, energy resolution at 5.9 keV and dark current. The SCD's performance is closely related to temperature, and the temperature range of -80 ℃ to -50 ℃ is the best choice, where the FWHM at 5.9 keV is about 130 eV. The influence of the neutron irradiation from an electrostatic accelerator with fluence up to 1×10⁹ cm^-2 has been examined. We find the SCD is not vulnerable to neutron irradiation. The detailed operations of the SCD and the test results of low temperature are reported, and the results of neutron irradiation are discussed.     

Measurements of charge transfer ef f iciency in a proton-irradiated swept charge device

Charged Coupled Devices(CCDs) have been successfully used in several low energy X-ray astronomical satellites over the past two decades. Their high energy resolution and high spatial resolution make them a perfect tool for low energy astronomy, such as observing the formation of galaxy clusters and the environment around black holes. The Low Energy X-ray Telescope(LE) group is developing a Swept Charge Device(SCD) for the Hard Xray Modulation Telescope(HXMT) satellite. A SCD is a special low energy X-ray CCD, which can be read out a thousand times faster than traditional CCDs, simultaneously keeping excellent energy resolution. A test method for measuring the charge transfer efficiency(CTE) of a prototype SCD has been set up. Studies of the charge transfer inefficiency(CTI) with a proton-irradiated SCD have been performed at a range of operating temperatures. The SCD is irradiated by 3×108cm-210 MeV protons.     

Design and optimization of the readout system for X-ray CCDs

A readout system for X-ray CCDs based on an improved architecture is presented; by optimizing several critical circuit blocks along the analog signal chain, the conflict between the readout speed and readout noise is greatly alleviated. Using CCD47-10 as its target CCD, the readout system has achieved 8.6e^- readout noise and 142 eV FWHM at 5.9 keV Mn m K_α under a pixel rate of 80 kHz. Also its performance of imaging has been investigated.     

偶氮苯磺酸衍生物的光致顺反异构化机理

基于密度泛函理论(DFT)中的B3LYP方法, 在6-311++G(d,p)水平上全优化得到了3,3'-偶氮苯磺酸(3,3'-AbS)在S0和T1态顺反异构化机理.在S0态存在两种异构化途径: 绕角NNC反转和绕NC键旋转相结合的形式和单纯的绕CNNC二面角旋转形式, 两种异构化途径的能垒分别为94.2和124.3 kJ·mol-1. 有必要指出的是, 在反转与旋转结合的途径上存在二次过渡态. 在T1态上仅存在旋转途径且其能垒为21.1 kJ·mol-1. 采用含时密度泛函理论(TD-DFT), 在B3LYP/6-311++G(d,p)水平上, 沿着基态的两种异构化途径计算得到了T1, S1, T2和S2态的垂直激发的势能剖面, 分析了可能的光致异构化途径. 当激发光波长为330 nm时, 反应物分子被激发到S2态, 然后弛豫到较低的能态S1发生异构化反应, 旋转途径存在两条活化途径: (1) 沿着S1/S0的圆锥交叉点衰变到产物; (2) 由S1态弛豫到T1态后, 在S0-T1-S0的区域发生异构化, 再转化到产物. 计算结果表明, 3,3'-AbS通过反转和旋转的结合形式实现在S0态的异构化, 而被激发后倾向于沿着旋转坐标作为其主要的异构化途径.     

Li掺杂对MgH2(001)表面H2分子扩散释放影响的第一性原理研究

本文利用基于密度泛函理论的第一性原理分别研究了MgH₂(001)表面H原子扩散形成H₂分子释放出去的可能路径及金属Li原子掺杂对其影响. 研究结果表明: 干净MgH₂(001)表面第一层释放H原子形成H₂分子有两种可能路径, 其释放能垒分别为2.29和2.50 eV; 当将Li原子替代Mg原子时, 两种H原子扩散释放路径的能垒分别降到了0.31和0.22 eV, 由此表明Li原子掺杂使MgH₂(001)表面H原子扩散形成H₂释放更加容易.     

取代8-羟基喹啉钌络合物催化Friedl?nder反应合成喹啉衍生物

Friedl?nder喹啉合成法是以邻胺基芳基醛或酮与有α-亚甲基的酮环化制备喹啉的反应,报道了一种喹啉钌络合物催化Friedl?nder法合成喹啉的方法.首先,以8-羟基喹啉钌络合物为催化剂,对模板反应邻氨基苯甲醇和苯乙酮合成2-苯基喹啉进行了反应条件优化实验.重点对比研究了8-羟基喹啉钌络合物配体上不同取代基对反应收率的影响,其中5-甲基-8-羟基喹啉(1e)钌络合物催化邻氨基苯甲醇和苯乙酮合成2-苯基喹啉获得了73%的最高收率.结合IR, UV以及密度泛函理论(DFT)计算讨论了配体结构与催化性能之间的关系.提出了β-H消除形成醛过渡态,交叉aldol反应再亚胺环化,最后脱水生成目标产物的可行机理.以(1e)₃Ru为催化剂,在优化的反应条件下进行了底物扩展研究,以69%～94%的收率合成了32个不同取代的喹啉衍生物,验证了方法的普适性.     

含取代噁唑结构的新型吡唑肟衍生物的合成与生物活性

为了发现具有良好生物活性的吡唑肟化合物,以唑螨酯为先导化合物,在吡唑肟中引入取代噁唑结构,设计并制备了20个未见文献报道的新型吡唑肟衍生物,利用1H NMR,13C NMR和元素分析确证了目标产物的结构.生物活性测试结果显示,部分目标化合物在500和100μg/mL浓度下对粘虫或蚜虫表现出优良的杀虫活性,其中5-(3-氟苯氧基)-1,3-二甲基-1H-吡唑-4-甲酰基-O-{[5-(4-氯苯基)噁唑-2-基]甲基}肟(9j)、5-(4-氟苯氧基)-1,3-二甲基-1H-吡唑-4-甲酰基-O-{[5-(4-氯苯基)噁唑-2-基]甲基}肟(9k)、5-(4-叔丁基苯氧基)-1,3-二甲基-1H-吡唑-4-甲酰基-O-{[5-(4-氯苯基)噁唑-2-基]甲基}肟(9r)和5-(4-甲氧基苯氧基)-1,3-二甲基-1H-吡唑-4-甲酰基-O-{[5-(4-氯苯基)噁唑-2-基]甲基}肟(9s)在浓度为100μg/mL时对粘虫的防治效果均达100%,5-(4-溴苯氧基)-1,3-二甲基-1H-吡唑-4-甲酰基-O-{[5-(4-氟苯基)噁唑-2-基]甲基}肟(9g)和9s在浓度为100μg/mL时对蚜虫的杀灭活性均为100%.此外,化合物9s在500μg/mL时对朱砂叶螨的防治效果为70%.     

硬X射线调制望远镜低能探测器量子效率标定

低能X射线望远镜是硬X射线调制望远镜卫星的主要载荷之一,探测器采用CCD236.探测器的量子效率会影响能谱拟合和绝对流量,有必要对其进行标定.利用~(55)Fe放射源,以硅漂移探测器为标准探测器,标定了CCD236在Mn-K_α(5.899 keV)和Mn-K_β(6.497 keV)能量点处的量子效率,此能段在Fe线附近,对X射线天文观测有重要价值.考虑探测器的分裂事例后,Mn-K_α和Mn-K_β处的量子效率分别为71%和62%.在-95—-30?C工作温度范围内,CCD量子效率与温度无关.利用CCD236的结构及实测的量子效率,不考虑沟阻影响,得到耗尽层厚度为38μm.对CCD236施加不同的电压,其量子效率基本不变,表明其在两相驱动下高低电平的耗尽层厚度相等,进而说明CCD236一直工作在深耗尽状态,其耗尽层到了外延层和衬底层边界,已达最大值.     

Proton irradiation effect on SCDs

The Low Energy X-ray Telescope is one of the main payloads on the Hard X-ray Modulation Telescope satellite.Swept charge devices(SCDs)are selected as detectors for the Low Energy X-ray Telescope.As SCDs are sensitive to proton irradiation,irradiation tests were carried out on the HI-13 accelerator at the China Institute of Atomic Energy.The beam energy was measured to be 10 MeV at the SCD.The proton fluence delivered to the SCD was 3×108protons/cm2over two hours.By comparing the performance before and after irradiation,it is concluded that proton irradiation affects both the dark current and the charge transfer inefficiency of the SCD.The energy resolution of the proton-irradiated SCD is 212 eV@5.9 keV at-60?C,while it before irradiated is 134 eV.Moreover,better performance can be reached by lowering the operating temperature of the SCD in orbit.     

A digital CDS technique and its performance testing

Readout noise is a critical parameter for characterizing the performance of charge-coupled devices (CCDs), which can be greatly reduced by the correlated double sampling (CDS) circuit. However, a conventional CDS circuit inevitably introduces new noise since it consists of several active analog components such as operational amplifiers. This paper proposes a digital CDS circuit technique, which transforms the pre-amplified CCD signal into a train of digital presentations by a high-speed data acquisition card directly without the noisy CDS circuit, then implements the digital CDS algorithm through a numerical method. A readout noise of 3.3 e^- and an energy resolution of 121 eV@5.9 keV can be achieved via the digital CDS technique.