Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.     

高等院校理科《无机及分析化学》经验交流会在南京召开

南京大学化学系受教育部的委托,于1983年6月17日—23日在南京主持召开了高等院校理科《无机及分析化学,教学经验交流会。出席会议的有来自全国25所综合性大学和高等师范院校的代表三十余人,人民教育出版社也派代表参加。     

镓在裸Si系和SiO2/Si系掺杂效应

Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics .     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

传感器可靠性寿命试验的统计分析

在可能有可燃气体的场所都装有报警仪.当空气中所含可燃气体达一定浓度时,报警仪及时呼叫,告之人们应及时采取措施,避免发生爆炸导致严重灾难.可靠性是报警仪十分重要的产品指标.浙江宁海无线电厂生产的报警仪是采用载体摧化技术制作的,其核心部分是传     

Si(111)衬底GaN薄膜的制备与特性

用溅射后退火反应法在Si(111)衬底上制备的高质量GaN薄膜. XRD, XPS, SEM和PL测量结果表明该方法制备的GaN是六角纤锌矿结构的多晶. GaN的最大晶粒尺寸约为100 nm. 在354 nm处发现强室温光致发光峰, 带隙相对于体GaN发生了轻微蓝移.     

对硝基偶氮氯膦光度法测定微量钙

不对称变色酸双偶氮类衍生物是测定钍和稀土的新显色剂。本文研究了对硝基偶氮氯膦(简称CPA-PN)对钙形成络合物的最佳条件。实验表明,在PH为6.6时,ε=2.6×10~4,氧化钙在0—30μg/25ml范围内符合比尔定律。本法灵敏度和选择性较好,能够在大量镁离子存在下测定微量钙。实验部分 (一)主要试剂和仪器 CPA-PN溶液:配成2×10_(-4)M水溶液。钙标准溶液;准确称取经105℃烘干的基准碳酸钙,用盐酸溶解后配成lmg CaO/ml,再稀释成10μgCaO/ml。     

氮化镓粉末的溶胶凝胶法制备及其结构

报道了一种新颖而有效的二步制备氮化镓粉末的方法. 以乙氧基镓Ga(OC2H5)3作前驱体, 利用溶胶-凝胶法和高温氨化法相结合, 在950 ℃氨化温度下, 将凝胶与流动的NH3反应20 min, 合成了GaN粉末. XRD、FTIR、TEM及SAED的测量结果表明, GaN粉末是六方纤锌矿结构的单晶晶粒, 粉末粒度较均匀, FTIR吸收谱有明显的宽化现象.     

白光LED用正交相Gd2(MoO4)3∶Dy3+ 荧光粉的制备与发光性能

利用水热法并经过退火煅烧制备了白光LED用正交相Gd₂(MoO₄)₃∶Dy³⁺荧光粉,用X射线衍射仪和扫描电子显微镜对样品的结构和微观形貌进行表征,利用荧光光谱对其发光性质进行了研究。 在389 nm的紫外光激发下,⁴F_9/2→⁶H_15/2跃迁产生的蓝光发射和⁴F_9/2→⁶H_13/2跃迁产生的黄光发射最强。发光光谱分析结果表明,Dy³⁺的最佳掺杂量为x=16%。此时荧光粉最为接近白光,其色坐标和色温分别为 (0.326, 0.336) 和6 389,是一种很有潜力的白光LED用荧光粉。     

扩镓Si基溅射Ga2O3氮化反应生长GaN薄膜

采用射频磁控溅射在扩镓硅基上溅射Ga2O3氮化反应生长GaN薄膜。用X射线衍射(XRD)、扫描电镜(SEM)、选区电子衍射(SAED)、光电能谱(XPS)和荧光光谱(PL)对样品进行结构、形貌、组分和发光特性的分析。XRD、SAED和XPS分析证明,采用此方法得到六方纤锌矿结构的GaN多晶膜。SEM显示薄膜由均匀、结合紧密的纳米微晶粒组成,其直径约为50～100nm。PL发光谱显示位于344nm处,相对于365nm明显蓝移的带边峰,此发光峰应归功于自由载流子的复合。