| 氮化镓粉末的溶胶凝胶法制备及其结构 |
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| 引用本文： | 刘亦安,薛成山,庄惠照,张晓凯,田德恒,吴玉新,孙莉莉,艾玉杰,王福学.氮化镓粉末的溶胶凝胶法制备及其结构[J].物理化学学报,2006,22(6):657-660. |
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| 作者姓名： | 刘亦安 薛成山 庄惠照 张晓凯 田德恒 吴玉新 孙莉莉 艾玉杰 王福学 |
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| 作者单位： | Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P. R. China |
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| 基金项目： | 教育部科学技术研究项目 |
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| 摘 要： | 报道了一种新颖而有效的二步制备氮化镓粉末的方法. 以乙氧基镓Ga(OC2H5)3作前驱体, 利用溶胶-凝胶法和高温氨化法相结合, 在950 ℃氨化温度下, 将凝胶与流动的NH3反应20 min, 合成了GaN粉末. XRD、FTIR、TEM及SAED的测量结果表明, GaN粉末是六方纤锌矿结构的单晶晶粒, 粉末粒度较均匀, FTIR吸收谱有明显的宽化现象.
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| 关 键 词： | 溶胶-凝胶法 氨化温度 GaN粉末 |
| 收稿时间： | 2005-11-07 |
| 修稿时间： | 2006-01-13 |
Structure and Synthesis of GaN Powder by Sol-Gel Method |
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| LIU,Yi-An,XUE,Cheng-Shan,ZHUANG,Hui-Zhao,ZHANG,Xiao-Kai,TIAN,De-Heng,WU,Yu-Xin,SUN,Li-Li,AI,Yu-Jie,WANG,Fu-Xue.Structure and Synthesis of GaN Powder by Sol-Gel Method[J].Acta Physico-Chimica Sinica,2006,22(6):657-660. |
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| Authors: | LIU Yi-An XUE Cheng-Shan ZHUANG Hui-Zhao ZHANG Xiao-Kai TIAN De-Heng WU Yu-Xin SUN Li-Li AI Yu-Jie WANG Fu-Xue |
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| Institution: | Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P. R. China |
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| Abstract: | A novel and efficient method was applied to prepare gallium nitride (GaN) powder. Hexagonal gallium nitride (GaN) powder was successfully synthesized by means of a combination of sol-gel process with high temperature ammoniation using Ga(OC2H5)3 as a precursor. Ammoniation of Ga2O3 gel was conducted in the flow of NH3 gas at 950 ℃ for 20 min. Measurement results by XRD, FTIR, TEM, and SAED indicate that the synthesised GaN is of a single-phase hexagonal wurtzite structure, and the granularity of the GaN powder has a good uniformity. In addtion, the FTIR shows a distinct peak broadening. |
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| Keywords: | Sol-gel method Ammoniation temperature GaN powder |
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