Mg掺杂GaN纳米线的结构及其特性

利用类似Delta掺杂技术在硅衬底上沉积Mg:Ga2O3薄膜, 然后在850 ℃下对薄膜进行氨化, 反应后制备出大量Mg掺杂GaN纳米线. 采用扫描电子显微镜(SEM)、X射线衍射(XRD)、傅里叶变换红外(FTIR)光谱和高分辨透射电子显微镜(HRTEM)对样品进行分析.结果表明, Mg掺杂GaN纳米线具有六方纤锌矿单晶结构, 纳米线的直径在30-50 nm范围内, 长度为几十微米.     

溶胶凝胶模板法制备SiO2:Sm3+纳米阵列材料

采用溶胶凝胶模板法制备了不同Sm3+掺量的SiO2:Sm3+纳米阵列材料,通过SEM、EDS、FTIR等对材料的形貌和结构进行测试表征.FTIR分析表明Sm3+进入SiO2网络结构形成了Si-O-Sm键.SEM、EDS分析显示Sm3+掺量的增大促使阵列由纳米管向纳米线的转变.此外,腐蚀清洗等后处理工艺对保持纳米阵列的形貌至关重要.最后,讨论了溶胶凝胶模板法制备SiO2;Sm3+纳米阵列的机理.     

GaN薄膜的两步法制备及其物性转变的研究

本实验通过水浴加热和简单化学气相氨化两步法,在旋涂有ZnO的Si衬底上成功合成了由排列整齐纺锤体形貌的GaOOH构成的薄膜,然后在950℃下对样品进行氨化得到由排列整齐纺锤体组成的GaN薄膜。然后对氨化前后样品的形貌,结构和光学性能分别通过FESEM、EDS、TEM、XRD和PL谱进行了表征。结果表明:水热生成的GaOOH薄膜是由纺锤体形状GaOOH紧密排列形成,该纺锤体形状GaOOH有直径大约600 nm,长约为1.5~2μm。氨化前后样品的形貌没发生太大的变化;但晶体结构由正交晶系相GaOOH转变为六方纤锌矿GaN;而且发光峰也由较宽的绿光峰转变为中心为365 nm的蓝光峰,这主要是由于样品由正交晶系相GaOOH转变为六方纤锌矿GaN引起的。最后对排列整齐的锤体形构成的GaOOH薄膜的形成机理以及GaOOH向GaN的转变过程发生的化学反应做了简单的探讨和分析。     

GaN纳米棒的催化合成及其发光特性

使用稀土元素Tb作催化剂, 通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜, 成功制备出GaN纳米棒. X射线衍射测试显示, GaN纳米棒具有六方结构. 利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出, 纳米棒为单晶GaN, 纳米棒的直径为50-150 nm, 长度约10 μm. 光致发光谱在368.6 nm处有一强的紫外发光峰, 说明纳米棒具有良好的发光特性. 讨论了GaN纳米棒的生长机制.     

纳米La203合成过程热力学及试验研究

本文对溶胶-凝胶法合成La2O3合成过程进行研究,计算了La(NO3)3和La(OH)3的热力学数据.在此基础上,对氧化镧的合成过程进行热力学进行了分析,确定了合成工艺条件,并采用溶胶-凝胶法制备出了纳米氧化镧粉末.     

TiO2-SiO2复合气凝胶：常压干燥制备及性能表征

以廉价的四氯化钛和工业水玻璃为原料,通过溶胶-凝胶法制得TiO2-SiO2复合湿凝胶,用三甲基氯硅烷(TMCS)/乙醇(EtOH)/正己烷(Hexane)混合溶液对湿凝胶进行改性,常压干燥制备了TiO2-SiO2复合气凝胶.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、红外光谱(FTIR)、X射线衍射(XRD)及N2吸附/脱附法对复合气凝胶的形貌和性质进行了分析.结果表明,TiO2-SiO2复合气凝胶具有连续多孔结构,150℃干燥后复合气凝胶的比表面积为1 076 m2·g-1,孔体积为4.96 cm3·g-1;经550 ℃热处理后,复合气凝胶仍然具有高的孔隙率,比表面积为856 m2·g-1,孔体积为3.46 cm3·g-1.吸附和光催化降解罗丹明B的结果表明,复合气凝胶同时具有较好的吸附和光催化性能,其吸附/光催化协同作用活性优于纯SiO2气凝胶和锐钛矿TiO2粉末;且重复利用四次降解率仍然可达到89%.     

两种新型多孔金属-有机凝胶的合成、表征与气体吸附性能

以1,4-二(3-乙酰丙酮基)苯(DAB)为有机配体分别与铝离子和铬离子反应,合成出2个新型的金属-有机凝胶:Al-湿凝胶和Cr-湿凝胶,通过直接干燥法得到相应的2种多孔干凝胶:Al-干凝胶和Cr-干凝胶.通过X射线粉末衍射仪(PXRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、傅里叶变换红外光谱仪(FTIR)、热重分析仪(TGA)、X射线能谱仪(EDS)和氮气吸附-脱附仪对凝胶材料的结构和形貌进行了表征.结果显示,2种多孔金属有机凝胶材料是由球状纳米粒子堆积而成,具有较高的比表面积、丰富的微孔及少量的介孔结构.气体吸附性能测试结果表明,Al-干凝胶的比表面积为790.3 m2/g,在1.01×105Pa,77 K下能够吸附117.45 cm3/g的氢气,在273 K下能够吸附60.74 cm3/g的二氧化碳.     

溶胶-凝胶法制备Y_3Al_5O_(12)超微粉末

使用溶胶-凝胶法制备了平均粒径为20～150nm的Y_3Al_5O_(12)超微粉末。从凝胶至超微粉末的过程中,发生了较大的失重现象。纯相晶态的Y_3Al_5O_(12)超微粉末的最低生成温度为900℃。粉末平均粒径随着灼烧时间的增加而逐渐增大,随着灼烧温度的增加而显著增大。     

尖晶石型NiCr2O4的燃烧法合成及表征

通过溶胶-凝胶燃烧法制备了具有立方相的尖晶石型NiCr2O4颜料,并采用TG/DSC、XRD、FTIR和SEM等手段对其进行表征和研究。结果表明:将燃烧后的粉末于900℃下煅烧2 h可以得到单一相的NiCr2O4,温度达不到900℃时所得粉末(包括燃烧后粉末和500和700℃煅烧得到的粉末)为NiO和Cr2O3组成的混合物。利用紫外/可见/近红外分光光度计仔细研究了燃烧后粉末和煅烧后粉末的颜色参数。尽管具有相同的成分,500和700℃下煅烧得到的粉末与燃烧后粉末却具有明显不同的颜色,这可从一氧化镍为非整比化合物的角度加以解释。此外,900和1 000℃下煅烧得到的NiCr2O4粉末呈现出随温度变化的绿色。     

利用Pd催化合成单晶GaN纳米线的光学特性(英文)

基于金属元素钯具有的催化特性,采用射频磁控溅射方法,在Si(111)衬底上沉积Pd:Ga2O3薄膜,然后在950℃下对薄膜进行氨化,制备出大量GaN纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等技术手段对样品的结构、形貌和成分进行分析.结果表明,制备的样品为具有六方纤锌矿结构的单晶GaN纳米线,直径在20-60nm范围内,长度为几十微米,表面光滑无杂质,结晶质量较高.用光致发光光谱对样品的发光特性进行测试,分别在361.1、388.6和426.3nm处出现三个发光峰,且与GaN体材料相比近带边紫外发光峰发生了较弱的蓝移.对GaN纳米线的生长机制也进行了简单的讨论.     

Ga2O3 and GaN nanocrystalline film: reverse micelle assisted solvothermal synthesis and characterization

Gallium oxide (beta-Ga2O3) nanoparticles were successfully deposited on quartz glass substrates using sodium bis(2-ethylhexyl) sulfosuccinate (AOT)/n-hexane/ethylene glycol monomethyl ether (EGME) reverse micelle-mediated solvothermal process with different omega values. The mean diameter of Ga2O3 particles was approximately 2-3 nm and found to be approximately independent of omega values of the reverse micelles. However, when the Ga2O3 nanocrystalline films were nitrided at 900 degrees C under flowing NH3 atmosphere for 1 h, the mean diameter of the resulted gallium nitride (wurtzite-GaN) nanoparticles varied from 3-9 nm. Both nanocrystalline films of Ga2O3 and GaN were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence in order to study their chemical and physical properties explicitly.     

Influence of oxygen on the crystalline-amorphous transition in gallium nitride films

Oxygen is a common impurity in nitride-based materials that affects the properties of technologically important materials such as gallium nitride semiconductors. In this work, the influence of oxygen on the structural evolution of GaN films is investigated using near-edge X-ray absorption fine structure (NEXAFS). The combined spectra of Ga L3-edge, N K-edge, and O K-edge indicate that the gallium coordination, formed by a mixture of oxide and nitride bonds, is directly dependent on the concentration of oxygen in the films. Below 24 atom % oxygen, gallium atoms are tetrahedrally coordinated within the films, while at higher concentrations the octahedral environment persists.     

Theoretical investigation on the electronic and geometric structure of GaN2+ and GaN4+

The electronic and geometric structures of gallium dinitride cation, GaN2+ and gallium tetranitride cation, GaN4+ were systematically studied by employing density functional theory (DFT-B3LYP) and perturbation theory (MP2, MP4) in conjunction with large basis sets, (aug-)cc-pVxZ, x = T, Q. A total of 7 structures for GaN2+ and 24 for GaN4+ were identified, corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces, and bonding mechanisms for some low-lying electronic states. The calculated dissociation energy (De) of the ground state of GaN2+, X1Sigma+, is 5.6 kcal/mol with respect to Ga+(1S) + N2(X1Sigmag+) and that of the excited state, ?3Pi, is 24.8 kcal/mol with respect to Ga+(3P) + N2(X1Sigmag+). The ground state and the first excited minimum of GaN4+ are of 1A1(C2v) and 3B1(C2v) symmetry with corresponding De of 11.0 and 43.7 kcal/mol with respect to Ga+(1S) + 2N2(X1Sigmag+) for X1A1 and Ga+(3P) + 2N2(X1Sigmag+) for 3B1.     

Synthesis and structure of Sr3GaN3 and Sr6GaN5: strontium gallium nitrides with isolated planar [GaN3]6- anions

Two new strontium gallium nitrides were obtained as single crystals by reaction in molten Na. Black Sr(3)GaN(3) is isostructural with its transition metal analogues, Sr(3)MnN(3), Ba(3)MnN(3), Sr(3)CrN(3), Ba(3)CrN(3), and Ba(3)FeN(3), and is the first example of a 313-ternary nitride containing only main group metals. It crystallizes in space group P6(3)/m (No. 176) with a = 7.584(2) A, c = 5.410(3) A, and Z = 2. Black Sr(6)GaN(5) is isostructural with Ca(6)GaN(5) and also with its transition metal analogues, Ca(6)MnN(5) and Ca(6)FeN(5). It crystallizes in space group P6(3)/mcm (No. 193) with a = 6.6667(6) A, c = 12.9999(17) A, and Z = 2. Both Ga compounds contain isolated planar [GaN(3)](6)(-) nitridometallate anions of D(3)(h)() symmetry.     

Intrinsic Properties of Macroscopically Tuned Gallium Nitride Single-Crystalline Facets for Electrocatalytic Hydrogen Evolution

The anisotropy of crystalline materials results in different physical and chemical properties on different facets, which warrants an in-depth investigation. Macroscopically facet-tuned, high-purity gallium nitride (GaN) single crystals were synthesised and machined, and the electrocatalytic hydrogen evolution reaction (HER) was used as the model reaction to show the differences among the facets. DFT calculations revealed that the Ga and N sites of GaN (100) had a considerably smaller ΔG_H* value than those of the metal Ga site of GaN (001) or N site of GaN (00−1), thereby indicating that GaN (100) should be more catalytically active for the HER on account of its nonpolar facet. Subsequent experiments testified that the electrocatalytic performance of GaN (100) was considerably more efficient than that of other facets for both acidic and alkaline HERs. Moreover, the GaN crystal with a preferentially (100) active facet had an excellently durable alkaline electrocatalytic HER for more than 10 days. This work provides fundamental insights into the exploration of the intrinsic properties of materials and designing advanced materials for physicochemical applications.     

Physical and electrical properties of chemical vapor grown GaN Nano/microstructures

Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area electron diffraction. Raman scattering spectra of the GaN leaves were studied. Field effect transistors based on individual GaN nanoleaves were fabricated, and the electrical transport results revealed a pronounced n-type gating effect of the GaN nanostructures.     

Theoretical study of gallium nitride molecules, GaN2 and GaN4

The electronic and geometric structures of gallium dinitride GaN 2, and gallium tetranitride molecules, GaN 4, were systematically studied by employing density functional theory and perturbation theory (MP2, MP4) in conjunction with the aug-cc-pVTZ basis set. In addition, for the ground-state of GaN 4( (2)B 1) a density functional theory study was carried out combining different functionals with different basis sets. A total of 7 minima have been identified for GaN 2, while 37 structures were identified for GaN 4 corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces and bonding mechanisms for some low-lying electronic states of GaN 4. The dissociation energy of the ground-state GaN 2 ( X (2)Pi) is 1.1 kcal/mol with respect to Ga( (2)P) + N 2( X (1)Sigma g (+)). The ground-state and the first two excited minima of GaN 4 are of (2)B 1( C 2 v ), (2)A 1( C 2 v , five member ring), and (4)Sigma g (-)( D infinityh ) symmetry, respectively. The dissociation energy ( D e) of the ground-state of GaN 4, X (2)B 1, with respect to Ga( (2)P) + 2 N 2( X (1)Sigma g (+)), is 2.4 kcal/mol, whereas the D e of (4)Sigma g (-) with respect to Ga( (4)P) + 2 N 2( X (1)Sigma g (+)) is 17.6 kcal/mol.     

The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): the importance of the basis set superposition error in strongly bound systems

The electron affinity of GaN and Ga2N as well as the geometries and the dissociation energies of the ground states of gallium nitrides GaN, GaN(-), Ga2N, and Ga2N(-) were systematically studied by employing the coupled cluster method, RCCSD(T), in conjunction with a series of basis sets, (aug-)cc-pVxZ(-PP), x=D, T, Q, and 5 and cc-pwCVxZ(-PP), x=D, T, and Q. The calculated dissociation energy and the electron affinity of GaN are 2.12 and 1.84 eV, respectively, and those of Ga2N are 6.31 and 2.53 eV. The last value is in excellent agreement with a recent experimental value for the electron affinity of Ga2N of 2.506+/-0.008 eV. For such quality in the results to be achieved, the Ga 3d electrons had to be included in the correlation space. Moreover, when a basis set is used, which has not been developed for the number of the electrons which are correlated in a calculation, the quantities calculated need to be corrected for the basis set superposition error.     

Defect dynamics observed by NMR of quadrupolar nuclei in gallium nitride

Hexagonal and cubic polytypes of bulk gallium nitride powders are characterized by 69,71Ga and 14N MAS NMR at 11.7 T. The (corrected) 71Ga chemical shifts are 333.0 and 357.5 ppm, respectively; the corresponding 14N chemical shifts are -301.8 and -297.0 ppm (all shifts referenced to 1 M gallium nitrate). The 69,71Ga nuclear quadrupole coupling constants (NQCC) in the hexagonal form are axially symmetric and agree with previous single-crystal determinations. The 71Ga MAS NMR satellite pattern envelope of the cubic form has a large Gaussian half-height width of 297 kHz, due to nonzero NQCC values induced by defects. The 14N MAS NMR spinning sideband pattern of the cubic form has a Lorentzian envelope half-height width of 17.5 kHz for the same reason. A sample containing both phases shows an unexpected marked loss of the 71Ga MAS NMR satellite transition intensity expected for the hexagonal phase. Static 71Ga-selective Hahn spin-echo measurements at the perpendicular edge of the powder pattern for the hexagonal form in this sample show a large reduction in T2, especially at higher temperatures. The partial destruction of both spin-echoes and rotational echoes is due to a chemical-exchange type process involving sites having different NQCC values.