STUDIES ON ION IMPLANTATION AND ELECTRICAL PROPERTIES OF POLYACETYLENE FILMS

The effects of ion implantation on ployacetylene films PA have been studied with Ar~+, Fe~+, C1~+, I~+, Na~+ and K~+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.     

聚苯胺薄膜的离子束效应

本文采用离子注入掺杂技术，研究了全氧化态聚苯胺薄膜的离子束效应．‘４０ｋＶＫ＋离子束注入后，聚苯胺薄膜的电导率随着剂量的增加而迅速增加．当剂量为１×１０１７Ｋ＋／ｃｍ２时，电导率增加了８个数量级．ＦＴＩＲ光谱图显示了Ｋ＋离子注入使全氧化态聚苯胺中的醌亚胺结构发生还原反应．温差电流法测量表明，离子注入区呈现ｎ型半导体特性．四探针法测量了离子注入掺杂聚苯胺的电导率与温度的关系．本文还对离子注入掺杂全氧化态聚苯胺的导电机制进行了初步探讨．     

聚乙炔离子注入掺杂及电性能的研究

本文用Ar~+,Fe~+,Cl~+,I~+,Na~+和K~+等离子束,在15—30keV能量范围内注入聚乙炔薄膜,剂量为1×10~(13)-3×10~(17)cm~(-2).借助红外光谱、卢瑟福背散射分析及四探针等测试方法,考察了离子注入诱导聚乙炔膜的化学结构及导电性能的变化,检测了化学掺杂与离子注入杂质的深度分布和p-n结的形成,并在此基础上探讨了离子束与聚合物相互作用过程的机理.