Quantum algorithm for neighborhood preserving embedding

Neighborhood preserving embedding (NPE) is an important linear dimensionality reduction technique that aims at preserving the local manifold structure. NPE contains three steps, i.e., finding the nearest neighbors of each data point, constructing the weight matrix, and obtaining the transformation matrix. Liang et al. proposed a variational quantum algorithm (VQA) for NPE [Phys. Rev. A 101 032323 (2020)]. The algorithm consists of three quantum sub-algorithms, corresponding to the three steps of NPE, and was expected to have an exponential speedup on the dimensionality n. However, the algorithm has two disadvantages: (i) It is not known how to efficiently obtain the input of the third sub-algorithm from the output of the second one. (ii) Its complexity cannot be rigorously analyzed because the third sub-algorithm in it is a VQA. In this paper, we propose a complete quantum algorithm for NPE, in which we redesign the three sub-algorithms and give a rigorous complexity analysis. It is shown that our algorithm can achieve a polynomial speedup on the number of data points m and an exponential speedup on the dimensionality n under certain conditions over the classical NPE algorithm, and achieve a significant speedup compared to Liang et al.'s algorithm even without considering the complexity of the VQA.     

Scalable Quantum Controlled Gates on Single-Photon Polarization Qubits Assisted by Nitrogen-Vacancy Centers Inside Single-Sided Optical Cavities

International Journal of Theoretical Physics - Quantum logic gates are the foundation of circuit-based quantum computation and quantum simulation. Multi-qubit quantum controlled gates are of vital...     

Singular soliton,shock-wave,breather-stripe soliton,hybrid solutions and numerical simulations for a (2+1)-dimensional Caudrey–Dodd–Gibbon–Kotera–Sawada system in fluid mechanics

Nonlinear Dynamics - In this paper, a (2+1)-dimensional Caudrey–Dodd–Gibbon–Kotera–Sawada system is investigated in fluid mechanics via the symbolic computation. With the...     

Synchronization mechanism of clapping rhythms in mutual interacting individuals

In recent years, clapping synchronization between individuals has been widely studied as one of the typical synchronization phenomena. In this paper, we aim to reveal the synchronization mechanism of clapping interactions by observing two individuals’ clapping rhythms in a series of experiments. We find that the two synchronizing clapping rhythm series exhibit long-range cross-correlations(LRCCs);that is, the interaction of clapping rhythms can be seen as a strong-anticipation process. Previous studies have demonstrated that the interactions in local timescales or global matching in statistical structures of fluctuation in long timescales can be sources of the strong-anticipation process. However, the origin of the strong anticipation process often appears elusive in many complex systems. Here, we find that the clapping synchronization process may result from the local interaction between two clapping individuals and may result from the more global coordination between two clapping individuals. We introduce two stochastic models for mutually interacting clapping individuals that generate the LRCCs and prove theoretically that the generation of clapping synchronization process needs to consider both local interaction and global matching. This study provides a statistical framework for studying the internal synchronization mechanism of other complex systems. Our theoretical model can also be applied to study the dynamics of other complex systems with the LRCCs, including finance, transportation, and climate.     

The discrete Gaussian free field on a compact manifold

In this article we define the discrete Gaussian free field (DGFF) on a compact manifold. Since there is no canonical grid approximation of a manifold, we construct a random graph that suitably replaces the square lattice ${\mathbb{Z}}^d$ in Euclidean space, and prove that the scaling limit of the DGFF is given by the manifold continuum Gaussian free field (GFF). Furthermore using Voronoi tessellations we can interpret the DGFF as element of a Sobolev space and show convergence to the GFF in law with respect to the strong Sobolev topology.     

Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO₂ mask on the thermal stress are studied. It is found that the SiO₂ mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO₂ mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.     

A super-junction SOI-LDMOS with low resistance electron channel

A novel super-junction LDMOS with low resistance channel(LRC), named LRC-LDMOS based on the silicon-oninsulator(SOI) technology is proposed. The LRC is highly doped on the surface of the drift region, which can significantly reduce the specific on resistance(Ron,sp) in forward conduction. The charge compensation between the LRC, N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance, which can completely deplete the whole drift,thus the breakdown voltage(BV) is enhanced in reverse blocking. The three-dimensional(3 D) simulation results show that the BV and R_(on,sp) of the device can reach 253 V and 15.5 mΩ·cm~2, respectively, and the Baliga's figure of merit(FOM = BV~2/R_(on,sp)) of 4.1 MW/cm~2 is achieved, breaking through the silicon limit.