Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO₂ mask on the thermal stress are studied. It is found that the SiO₂ mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO₂ mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.     

原位土培秸秆育苗容器的降解特性光谱分析

为研究新型可降解育苗容器降解行为,以改性大豆胶为基体树脂,秸秆为增强材料热压制备的秸秆育苗容器为研究对象,利用原位土培降解秸秆育苗容器,采用纤维素测定仪、傅里叶红外光谱(FTIR spectra)、扫描电镜-X能谱(scanning electron microscopy-energy dispersive X-ray spectroscopy,SEM-EDS)以及热重(thermo-gravimetry,TG)等分析手段,对秸秆育苗容器土培降解前后物理、化学组分和结构变化进行表征。研究结果表明:与土培前秸秆育苗容器相比,土培降解秸秆容器中纤维素、半纤维素和木质素相对含量从29.03%,30.44%和12.52%降低至21.43%,21.41%和9.54%;FTIR分析表明土培降解后秸秆育苗容器中酯键和脂肪键发生断裂,且芳香族特征峰明显减弱;SEM-EDS谱图结果证明秸秆容器中微纤丝链段、基体树脂溶解,材料表面发生氧化降解;TGA结果分析表明土培秸秆容器内部存在大量小分子物质,分解后残余物耐热性提高。     

相思树聚戊糖含量近红外光谱分析模型的建立及修正

建立适应不同产地相思树化学组分含量的近红外光谱分析模型对预测木材化学组分含量具有重要的意义。用常规化学法测量了取自广西78个和福建33个相思树样品的聚戊糖含量,并结合近红外光谱数据用偏最小二乘法建立了广西相思树聚戊糖含量的近红外光谱模型。校正模型的决定系数R2cv为0.947,内部交叉验证均方差RMSECV为0.464,验证模型Rv2al为0.925,RMSEP为0.455。为了扩大模型的适用范围,用福建不同数量样品对该模型进行修正。结果表明:在广西模型的基础上加入一个有代表性的福建样品就能大大降低直接用广西模型预测福建样品的误差。加入3个有代表性的福建样品后能够得到较好的模型。用该模型预测未参加建模的福建样品,预测模型的Rv2al为0.904,RMSEP为0.759。用4组(每组3个样)不同的福建样品修正广西模型,用固定的20个未参与修正广西模型的样品来验证,预测误差略有不同,表明样品的选择在一定程度上影响着修正模型的质量。     

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 10¹¹ cm^-2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.