液晶光定向层材料

本文综述了近10年来液晶显示用光定向层材料领域的研究现状和进展情况，主要概述了光降解型、光致异构型、光交联型以及自组装等材料，并对目前报道的液晶光定向机理进行了总结和归纳。     

富氮掺杂碳空心纳米笼协同钴镍硫化物提升超级电容器性能

采用简单的热解-硫化两步法成功制备了一种新型的富氮掺杂碳空心纳米笼(NC)负载双元金属硫化物纳米颗粒(CoNi_xS_y)的复合材料 CoNi_xS_y/NC。该策略以丁二酮肟镍为镍源,增加了活性位点,同时前驱体 ZIF-8@Ni-ZIF-67的核壳结构为空心碳纳米笼的构建提供了可能性。这种独特的负载多金属硫化物纳米颗粒的中空结构使CoNi_xS_y/NC作为电极材料时具有更多的活性位点、更高的导电性和结构稳定性,从而使其具有较高的比容量(1 A·g^-1时比容量为629.2 F·g^-1),优异的循环稳定性(1 A·g^-1下1 000次循环测试后容量保持率为93.4%)。当将其进一步组装成对称超级电容器后,在1 A·g^-1下可提供207.2 F·g^-1的比电容,1 000圈循环稳定后的容量保持率为85.36%。     

Fabrication of rhenium Josephson junctions

Rhenium is a superconductor with a relatively weak tendency to oxidize, which is advantageous in superconducting quantum circuit and qubit applications. In this work, Re/A1-A1Ox/Re Josephson tunnel junctions were fabricated using a selective film-etching process similar to that developed in Nb trilayer technology. The Re films had a superconducting transition temperature of 4.8 K and a transition width of 0.2 K. The junctions were found to be highly reproducible using the fabrication process and their characteristics had good quality with a low leakage current and showed a superconducting gap of 0.55 meV.     

Fabrication of high-quality submicron Nb/Al--AlOx/Nb tunnel junctions

Nb/Al-AlOx/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al-AlOx/Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with Vm=100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm^2, which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.     

Nb/Al-AlOx/Nb junctions with controllable critical current density for qubit application

Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density Jc are fabricated using the standard selective Nb etching process.Tunnel barriers are formed in different oxygen exposure conditions (oxygen pressure P and oxidation time t),giving rise to Jc ranging from 100 A/cm2 to above 2000 A/cm2.Jc shows a familiar linear dependence on P × t in logarithmic scales.We calculate the energy levels of the phaseand flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future.     

Measuring Loschmidt echo via Floquet engineering in superconducting circuits

The Loschmidt echo is a useful diagnostic for the perfection of quantum time-reversal process and the sensitivity of quantum evolution to small perturbations. The main challenge for measuring the Loschmidt echo is the time reversal of a quantum evolution. In this work, we demonstrate the measurement of the Loschmidt echo in a superconducting 10-qubit system using Floquet engineering and discuss the imperfection of an initial Bell-state recovery arising from the next-nearest-neighbor (NNN) coupling present in the qubit device. Our results show that the Loschmidt echo is very sensitive to small perturbations during quantum-state evolution, in contrast to the quantities like qubit population that is often considered in the time-reversal experiment. These properties may be employed for the investigation of multiqubit system concerning many-body decoherence and entanglement, etc., especially when devices with reduced or vanishing NNN coupling are used.     

聚合物电光调制器包覆层材料研究

随着信息技术的飞速发展 ,利用光作为信息传输、存储、处理工具的光电子信息技术将得到广泛的应用 .电光调制器是将电信号调制到光束上的电光器件 ,在光通讯领域有十分重要的应用背景[1～ 5] .与通常基于无机材料 (如 ,LiNbO3 、KH2 PO4晶体等 )的电光调制器相比 ,基于聚合物材料的电光调制器具有非线性光学系数大、能量损耗低 (聚合物材料的介电常数很低 )和制作方法简单等优点[6,7] .因此 ,可应用于聚合物电光调制器的新材料是最近一、二十年来研究的热点和前沿 ,受到人们的广泛关注 .通常Mach Zehnder聚合物电光调制器具有“三明治”…     

木质素接枝偶氮苯液晶聚合物的合成与表征及光响应性能研究

以天然高分子木质素为原料,通过亲核取代反应将木质素改性成为大分子引发剂,引发偶氮苯单体的原子转移自由基聚合(ATRP),得到一系列木质素基光响应聚合物.接枝后的木质素的热稳定性明显改善,且平均接枝率达到72.8%时才能表现出液晶行为.小角X射线散射和偏光显微镜的结果表明所形成的液晶相为近晶C型,层间距为3.21nm.在此基础上,用紫外-可见吸收光谱(UV-Vis)对木质素基液晶聚合物的光响应性进行研究,发现溶液中的光响应性比膜状态的光响应速率快.在紫外光的辐照下,木质素基液晶聚合物表现出快速的光致液晶-各向同性相变行为.     

CeO_2改性SiO_2-CuO复合氧化物的制备和表征以及催化氧化脱硫性能

采用不同方法、不同负载量、不同焙烧温度制备CeO_2改性的SiO_2-CuO-CeO_2复合氧化物催化剂,并对其进行X射线衍射分析、扫描式电子显微镜、TG-DSC、N_2吸附-脱附和H_2-TPR等表征.在温和条件(65℃、常压)下,以过氧化氢为氧化剂,乙腈为溶剂,苯并噻吩(BT)为模型硫化物,考察SiO_2-CuO-CeO_2复合氧化物催化剂的氧化脱硫性能,确定复合氧化物的最佳制备工艺条件.结果表明,适量的添加CeO_2可以提高CuO在SiO_2上的分散度、比表面积和孔径,提高复合氧化物的活性;溶胶-凝胶法制备的SiO_2-0.1CuO-0.02CeO_2复合氧化物,在500℃下焙烧,催化剂活性最高,脱硫率最高为81.6%.催化剂的重复使用5次,脱硫率仍可达到60.0%.