Sputtering pressure influence on growth morphology,surface roughness,and electrical resistivity for strong anisotropy beryllium film

The strong anisotropy beryllium （Be） films are fabricated at different sputtering pressures by direct current magnetron sputtering. With the increase of pressure, the deposition rate of Be film first increases, and when the pressure exceeds 0.8 Pa, it gradually descends. The X-ray diffraction analysis indicates that Be film is of α-Be phase, its surface always reveals the （101） crystal plane possessing the low surface energy. As for the growth morphology of Be film, the surface is mainly characterized by the fibrous grains, while the cross section shows a transition from a columnar grain to a mixed grain consisting of a cone-shaped grain and a columnar grain as the sputtering pressure increases. The large grain fraction decays exponentially from 75.0% to 59.3% with the increase of sputtering pressure p, which can improve the grain size uniformity. The surface roughness increases due to the insufficient atom diffusion, which is comparable to its decrease due to the etching effect at p 〈 0.8 Pa, while it increases drastically at p 〉 0.8 Pa, and this increase is dominated by the atom diffusion. The electrical resistivity values of Be films range from 1.7 μΩ m to 2.7 μΩ m in the range 0.4 Pa-1.2 Pa, which is 50 times larger than the bulk resistivity.     

Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Transport properties on the surface of a topological insulator （TI） under the modulation of a two-dimensional （2D） ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ 0 〈π/2 and r/2 〈 0 ≤ π, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.     

Influence of roughness on the detection of mechanical characteristics of low-k film by the surface acoustic waves

The surface acoustic wave （SAW） technique is a precise and nondestructive method to detect the mechanical charac- teristics of the thin low dielectric constant （low-k） film by matching the theoretical dispersion curve with the experimental dispersion curve. In this paper, the influence of sample roughness on the precision of SAW mechanical detection is inves- tigated in detail. Random roughness values at the surface of low-k film and at the interface between this low-k film and the substrate are obtained by the Monte Carlo method. The dispersive characteristic of SAW on the layered structure with rough surface and rough interface is modeled by numerical simulation of finite element method. The Young＇s moduli of the Black DiamondTM samples with different roughness values are determined by SAWs in the experiment. The results show that the influence of sample roughness is very small when the root-mean-square （RMS） of roughness is smaller than 50 nm and correlation length is smaller than 20 μm. This study indicates that the SAW technique is reliable and precise in the nondestructive mechanical detection for low-k films.     

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulat（ is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrie the transport processes can be divided into three kinds： the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the currenl voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltag and then a large peak-to-valley current ratio can be obtained.     

785 nm激光诱导银纳米三角片聚集表面增强拉曼散射效应

为实现表面增强拉曼散射（SERS）光谱的强信号快速检测分析,报道了通过785 nm激光诱导银纳米三角片（AgNPRs）聚集的方法。采用配体辅助化学还原法制备了AgNPRs,其边长约为80 nm,表面等离子体吸收峰出现在约774 nm处,对785 nm光产生有效吸收。在785 nm光辐照下,AgNPRs逐渐聚集,对巯基苯甲酸的SERS信号逐渐增强,其源于AgNPRs吸收的光转化为热而引起的AgNPRs聚集。其增强因子高达10⁹。为快速获得强SERS信号,激发光功率需大于250 mW。     

法国研究人员开发出由单个分子构成的LED

正为了挑战LED最小化极限,法国史特拉斯堡大学、法国第六大学以及法国国家科学研究院的研究人员合作已经开发出由单个分子构成的LED。该LED是由一根聚噻吩(polythiophene)线放置在扫描隧道显微镜和黄金表面之间而形成。它只有当电流通过时才会沿某一方向发光。这个实验绝妙地揭示了电-光之间转化设备的最小尺度。此外,它也代表了创建未来分子计算机组件向前     

N-O螯合配体协同膦配体的银(Ⅰ)混配配合物的设计、结构和生物活性

合成了一种Ag （Ⅰ）配合物[Ag （Qina）（Tpp）₂]·1.5H₂O （Qina=2-喹啉羧酸根,Tpp=三苯基膦）。运用单晶X射线衍射、IR、NMR和粉末X射线衍射对配合物的结构进行了表征。配合物属于单斜晶系,C2/c空间群,晶胞参数：a=3.195 90（13） nm,b=1.210 96（4） nm,c=2.319 74（7） nm,β=102.166（4）°,V=8.776 0（5） nm³,Z=8。通过Hirshfeld表面分析,推导出配合物的超分子结构和分子间弱作用力。同时,通过DNA结合活性测试、抗菌活性和癌细胞体外毒活性测试,评价了配合物的生物活性。     

负载型复合半导体V2O5-TiO2/SiO2表面V2O5和TiO2的相互修饰作用

 采用表面改性法制备了负载型复合半导体材料V2O5-TiO2/SiO2,并用X射线衍射、比表面积测定、拉曼光谱、程序升温还原和紫外-可见漫反射光谱等技术对固体材料的结构和光响应性能进行了表征. 结果表明,V2O5和TiO2在负载型复合半导体V2O5-TiO2/SiO2表面有相互修饰的作用. 一方面,V2O5能扩展TiO2的光响应范围,使TiO2的吸光区域由紫外光区拓宽至可见光区,从而提高了复合半导体对光能的利用率; 另一方面,TiO2则有助于提高V2O5在载体表面的分散程度,抑制VOx的聚合,减小V2O5的微晶尺寸,提高固体材料的能隙值和氧化还原能力.     

介孔Al2O3负载纳米Au催化剂用于低温催化氧化CO

 用不同模板剂合成了具有较高比表面积和较多表面碱性位的介孔Al2O3载体,并采用均相沉积-沉淀法制备了Al2O3负载纳米Au催化剂,对制备的介孔Al2O3载体及相应催化剂采用低温N2吸附法、TEM和XPS等手段进行了表征,考察了载体表面碱性对纳米Au粒子在载体表面的沉积及相应催化剂在CO氧化反应中催化性能的影响. 以CO2-TPD法测定载体表面碱性,结果表明,介孔氧化铝的表面碱性与其合成过程中所用的模板剂有关. 以表面碱性位较丰富的介孔Al2O3为载体制备的催化剂表面Au粒子分布较均匀且粒径(3.1～3.2 nm)较小,在CO完全氧化反应中催化活性最高,表明载体表面的碱性位有利于稳定其表面沉积的纳米Au粒子. XPS分析结果表明,催化剂表面的Au主要以Au0金属态形式存在,它在CO氧化反应中表现出较高的催化活性.     

SHPB测试中的均匀性问题及恒应变率

利用一维应力波理论对霍普金森压杆(SHPB)测试中的均匀性问题作了较为详尽的讨论,对测试中各种加载波形的优缺点及各参数对均匀性的影响进行了分析与评估。给出了测试脆性材料时实现恒应变率加载的加载条件。对在满足应力均匀性要求下SHPB的可测应变率范围作了讨论并修正了前人不完善的结论。讨论了考虑均匀性时应采用的测试数据处理方法。利用图解的方法对弹塑性材料测试时的均匀性问题及相应加载要求作了定性分析,指出对弹塑性材料,测试中的应变不均匀也应予以考虑。