Translocation of Single Polymer Chain from Nanopore on a Membrane： Solvent Effect

We investigate the translocation of single polymer chain through a nanopore located on a membrane with different solvents in the two sides of the membrane. For the case under study, the effect of solvents on the translocation dynamics is significant, and as a result, the mean first passage time shortens remarkably compared with that calculated in the case of good solvents on both the sides of the membrane. In addition, we also discuss the condition such that the present result holds true.     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

Nanoporous Structure in Low-Dielectric Films with Positronium Annihilation Lifetime Spectroscopy

We investigate nano-porous structures in thin low-dielectric films, i.e. the pore sizes, distributions, and interconnectivity, by using depth profiled positronium annihilation lifetime spectroscopy (PALS). It is found that PALS has good sensitivity to probe both interconnected and closed pores in the range from 0.3nm to 3Onto, even in the film buried beneath a diffusion barrier. A series of low dielectric constant films of organosilicon-silsequioxane with different weight percentages of porogen have been comparatively investigated. The PALS technique can be used to distinguish the open porosity from the closed one, to determine the pore size, and to detect the percolation threshold with the increasing porosity that represents the transition from closed pores to interconnected pores.Furthermore, the pore percolation length can be derived.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD

Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data,and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al^ ions, are also investigated. Studies on AI implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al^ implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region.     

Low-Threshold Random Laser with One Mirror and Feedbacks in PMMA Nano-Composite Films

A low-threshold random laser with one mirror and feedback is investigated in the PMMA film containing rhodamine 590 and TiO2 nano-particles. Incoherent and coherent laser emission is observed. Effect of particle concentration on light emission is explored, and the optimum particle concentration is obtained. Optical microscopy and scanning probe microscopy are used to investigate the film structure, and the principle of incoherent and coherent laser is analysed.     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering

Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.