三星LG转求量子点技术

正由于OLED电视太贵,全球最大的两家电视制造商三星和LG正在寻求通过量子点(quantum dot)技术来生产电视显示屏,并计划将此技术应用到他们下一代的电视产品之中。这种新生的技术可以将一薄层细微的发光晶体转化成正常的液晶显示图像。目前来看,这种制造工艺非常直接,而且能够以更加便宜的成本提供质量更高的图像,这种成本要比有机电致发光显示(OLED)技术便宜得多。价格更便宜,可能会推动量子点技术更加快速地发展。据     

华盛顿大学发布全球最薄的LED—厚度相当于3颗原子

正近日,华盛顿大学的研究人员宣布了全球最薄的LED—厚度相当于3颗原子。该项研究报告联合作者徐晓东(Xiaodong Xu音译)称,"这种薄度且可折叠的LED未来将对便携式集合电子设备的研发起到至关重要的作用。"研究人员表示,这种LED的厚度要比现在的LED薄10~20倍,且能折叠,这将大大提高其灵活性,同时对未来可穿戴设备的发展也将起到推动作用。未来研究人员可以在某些微型电脑芯片中用光学信号代替现在所使用的电子信号,进而加大     

Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates

Co-doped TiO2 thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can suffer a 400℃ deposition temperature and prevent the growth of silicon dioxide on silicon. After that, the room temperature ferromagnetism behaviors are observed in the hydrogenated samples, which are measured by the alternating gradient magnetometer. X- ray photoelectron spectroscopy and x-ray absorption fine structure measurements have revealed the existence of cobalt clusters. According to the material analysis, the magnetic behavior after hydrogenation is suggested to be induced by the enhancement of cobalt dusters.     

Ground-State Properties of Superfluid Fermi Gas in Fourier-Synthesized Optical Lattices

By employing the balance condition between the lattice potential and the interatomic interaction, we study the ground state solutions of superfluid Fermi gases in Fourier-synthesized （FS） optical lattices. The average energy of the ground state, the atoms number, and the atom density distribution of the Fermi system are analytically derived along the Bose–Einstein condensation （BEC） side to the Bardeen–Cooper–Schrieffer （BCS） side. We analyze the properties of ground state solutions at both the BEC limit and unitarity in FS optical lattices. It is found that the relative phase α between the two lattice harmonics impacts greatly on the properties of the ground state of the superfluid Fermi gas. Especially in the BCS limit, when α=π/2, the average energy presents an exponential form with the increase of the potential depth of the lattice harmonics v2. Meanwhile, there exits a minimal value. Moreover, due to the Fermi pressure, the atom density distribution at unitarity is more outstretched than that in the BEC limit. The average energy at unitarity is apparently larger than that in the BEC limit. The properties of the ground state solution exhibit very different behaviors when the system transits from the BEC side to the BCS side.     

Trap States in Al2O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis

We present a detailed analysis of the trap states in atomic layer deposition Al2O3/InAlN/GaN high electron mobility transistors grown by pulsed metal organic chemical vapor deposition. Trap densities, trap energies and time constants are determined by frequency-dependent conductance measurements. A high trap density of up to 1.6×1014 cm？2eV？1 is observed, which may be due to the lack of the cap layer causing the vulnerability to the subsequent high temperature annealing process.     

Probing Majorana Bound States in T-Shaped Junctions

We investigate the transport properties of a pair of Majorana bound states in a T-shaped junction, where two normal leads are coupled with an identical Majorana bound state. Both the scattering matrix and the recursive Green function method show that the peak value of the differential conductance （Gpeak） in units of e2/h and the shot noise Fano factor in the zero bias limit （F0）, which are measured at the same lead and zero temperature, satisfy a linear relation as F0=1＋Gpeak/2, independent of the magnitude or symmetry of the coupling strengths to the leads. Therefore, combined measurements of the differential conductance and shot noise in the T-shaped geometry can serve as a characteristic signature in probing Majorana bound states.     

Electron Impact Excitation of Xenon from the Ground State and the Metastable State to the 5p57p Levels

Electron impact excitation cross sections from the ground state and the lowest metastable state 5p56s J=2 to the excited states of the 5p57p configuration of xenon are calculated systematically using the fully relativistic distorted wave method. Special attention is paid to the configuration interaction effects in the wave-function expansion of target states. The results are in good agreement with the recent experimental data by Jung et al. [Phys. Rev. A 80 （2009） 062708] over the measured energy range. These accurate theoretical results can be used in the modeling and diagnosis of plasmas containing xenon.     

Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT

In order to improve the breakdown voltage of AlGaN/GaN high electron mobility transistors （HEMTs）, we report a feasible method of low density drain （LDD） HEMT. The fluoride-based plasma treatment using CF4 gas is performed on the drain-side of the gate edge. The channel two-dimensional electron gas （2DEG） concentrations are modulated by fluoride plasma treatment, and the peak electric field at the gate edge is effectively reduced, so the breakdown voltage is improved. The electric field distributions of the LDD-HEMTs are simulated using the Silvaco software, and the peak of the electric field on the gate edge is effectively reduced. Experimental results show that, compared with the conventional HEMT, LDD-HEMTs have a lower reverse leakage current of the gate, and the breakdown voltage is increased by 36%. The current collapse characteristics of the LDD-HEMTs are confirmed by dual-pulse measurement, and an obvious pulse current reduction is due to the surface states by implanting F ions between the gate and the drain.     

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为了研究靶材料对快电子能量分布的影响,采用电子谱仪测量了飞秒激光与Cu和CH靶相互作用中在靶前和靶后产生的快电子能谱。结果显示,在靶前Cu和CH靶的快电子能谱相似,反应了快电子发射对靶材料的依赖性较弱;在靶后Cu和CH靶的快电子能谱具有明显的差异,说明电子的输运过程与靶材料密切相关。冷电子环流以及自生磁场是导致Cu靶快电子能谱"软化"的原因,而对于CH靶麦克斯韦分布的快电子能谱主要由碰撞机制决定。