Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates

Co-doped TiO2 thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can suffer a 400℃ deposition temperature and prevent the growth of silicon dioxide on silicon. After that, the room temperature ferromagnetism behaviors are observed in the hydrogenated samples, which are measured by the alternating gradient magnetometer. X- ray photoelectron spectroscopy and x-ray absorption fine structure measurements have revealed the existence of cobalt clusters. According to the material analysis, the magnetic behavior after hydrogenation is suggested to be induced by the enhancement of cobalt dusters.     

圆结构光视觉三维点管道缺陷检测及重构

管道内表面的缺陷检测对于保证介质运输安全,避免泄漏和爆炸事故非常重要。在分析三维点分布几何特征的基础上,对基于视觉检测获得的管道内表面三维点,通过判断同一圆周上相邻点法线夹角变化检测管道内表面的凹凸缺陷,采用空间点相邻三角平面法线加权平均获取空间点的法线。依据三维点呈圆周分布的特点,采用相邻圆周上点顺次连接进行快速三角剖分。基于上述方法对实际测量的管道内表面三维点和仿真三维点分别进行了凹凸缺陷检测和三维重构。该方法能实现径向变化小于0.1 mm的管道凹凸缺陷的检测和识别,三维测量精度为0.081 mm。