单层n型MoS2/p型c-Si异质结太阳电池数值模拟

单层二硫化钼(MoS₂)是一种具有优异光电性能的半导体材料,在太阳能能量转换中表现出很大的应用潜力。本文基于AMPS模拟软件,对单层n型MoS₂/p型c-Si异质结太阳电池进行了数值模拟与分析。通过模拟优化,n型MoS₂的电子亲和能为3.75 eV、掺杂浓度为10¹⁸ cm^-3,p型c-Si的掺杂浓度为10¹⁷ cm^-3时,太阳电池能够取得最高22.1%的转换效率。最后模拟了n型MoS₂/p型c-Si异质结界面处的界面态对太阳电池性能的影响,发现界面态密度超过10¹¹ cm^-2·eV^-1时会严重影响太阳电池的光伏性能。     

基于Nie-Tan算法的区间二型模糊集质心计算:改变主变量采样个数

计算区间二型模糊集的质心(也称降型)是区间二型模糊逻辑系统中的一个重要模块。Karnik-Mendel(KM)迭代算法通常被认为是计算区间二型模糊集质心的标准算法。尽管如此,KM算法涉及复杂的计算过程,不利于实时应用。在各种改进类算法中,非迭代的Nie-Tan(NT)算法可节省计算消耗。此外,连续版本NT(CNT,continuous version of NT)算法被证明是计算质心的准确算法。本文比较了离散版本NT算法中求和运算和连续版本NT算法中求积分运算,通过四个计算机仿真例子证实了当适度增加区间二型模糊集主变量采样个数时,NT算法的计算结果可以精确地逼近CNT算法。     

铅基堆超临界CO2复合循环发电系统热力学分析

本文对比了再压缩超临界CO2 (S-CO2)循环、蒸汽朗肯循环、He布雷顿循环分别应用于铅基堆的最优热学性能,明确了S-CO2循环与铅基堆结合较传统循环的热力学优势。为进一步提高再压缩S-CO2循环的效率,以跨临界CO2 (T-CO2)循环为底循环构建了再压缩S-CO2/T-CO2复合循环,探讨了不同顶循环透平入口温度、压力和压缩机入口温度条件下系统性能的变化规律,对比了S-CO2/T-CO2复合循环和S-CO2循环的热学性能。结果表明:铅基堆再压缩S-CO2循环发电系统较传统循环形式具有更高的热效率;构建的S-CO2/T-CO2复合循环能够有效提高S-CO2循环的效率,在所研究参数范围内,S-CO2/T-CO2复合循环的热效率和效率比S-CO2循环分别最大可提高约4.8%和8.3%;再压缩S-CO2循环和S-CO2/T-CO2复合循环热学性能随顶循环关键参数变化规律具有一致性。     

基于深度学习的ELM实时识别研究

基于深度学习的方法，在HL-2A装置上开发出了一套边缘局域模(ELM)实时识别算法。算法使用5200次放电数据(约24.19万数据切片)进行学习，得到一个深度为22层的卷积神经网络。为衡量算法的识别能力，识别了HL-2A装置自2009年实现稳定ELMy H模放电以来所有历史数据(约26000次放电数据)，共识别出1665次H模放电，其中误识别35次，误报率为2.10%。在实际的1634次H模放电中，漏识别4次，漏识别率为0.24%。该误报率和漏报率可以满足ELM实时识别的精度要求。识别算法在实时控制环境下，对单个时间点的平均计算时间为0.46ms，可以满足实时控制的计算速度要求。     

Modeling ExB drift transport in conceptual slot divertor configurations

At DIII-D, a slot divertor concept, called small-angle-slot (SAS), is under development, aiming to enable detachment at relatively low plasma edge density. We report on simulations using the SOLPS-ITER two-dimensional edge code to examine the performance of conceptual “SAS 2” slot configurations. The focus of the analysis is on E  ×  B drift effects on upstream density at detachment (UDD), with detachment marked by electron temperature T_e ≤ 3 eV at the outer strike point (OSP). With toroidal field such that radial E  ×  B drift carries particles from the OSP towards the private flux region (PFR), placing the OSP near the inner slot wall gives ≈20% lower UDD than having the OSP near the outer wall. The inner wall effectively traps the radial E  ×  B drift flux, resulting in low T_e and associated radial electric field in the PFR, and thus small losses from the slot to the inner target via poloidal E  ×  B drift flux. With toroidal field reversed such that radial E  ×  B drift is reversed, OSP placement near the inner wall gives ≈10% lower UDD than OSP placement near the outer wall. Although radial E  ×  B flux is from the OSP towards the outer wall, this flux largely escapes the slot, raising the UDD. A change in the slot shaping is suggested with the goal of eliminating such E  ×  B -driven particle losses from the slot.     

第三族金属氧化物离子对二氧化碳转化的红外光谱研究

本文利用红外光解离光谱研究了第三族金属氧化物离子对二氧化碳分子的转化机制. 研究表明，对于[ScO(CO₂)_n]⁺体系，在n≤4时，形成了溶剂化结构；在n=5时，形成了碳酸盐结构，实现了二氧化碳的转化. 对于[YO(CO₂)_n]⁺体系，需要4个二氧化碳分子就可以实现二氧化碳的转化. 而在[YO(CO₂)_n]⁺体系中，只发现了溶剂化结构，没有观察到碳酸盐结构. 理论计算表明，[YO(CO₂)_n]⁺体系拥有最小的溶剂化结构向碳酸盐结构转化能垒，[LaO(CO₂)_n]⁺体系拥有最大的溶剂化结构向碳酸盐结构转化能垒. 本文从分子水平揭示了不同金属氧化物离子对二氧化碳分子转化的影响规律.     

饮用水中三氯甲烷与其他氯消毒副产物在活性炭上的吸附竞争研究

通过等温吸附实验，探究了三氯甲烷（CHCl₃）与二氯一溴甲烷（CHBrCl₂）、二氯乙酸（Cl₂CHCOOH）在活性炭上的竞争吸附关系，同时探究了在低浓度条件下CHBrCl₂和Cl₂CHCOOH浓度变化对活性炭吸附CHCl₃的影响。实验结果表明，活性炭吸附CHCl₃和CHBrCl₂符合Freundlich模型，对Cl₂CHCOOH的吸附符合Langmuir模型；活性炭对3种消毒副产物均为优先吸附，吸附能力由大到小依次为CHBrCl₂、CHCl₃、Cl₂CHCOOH；低浓度条件下，活性炭对消毒副产物的吸附效果随体系中物质种类的增加而降低；低浓度条件下，Cl₂CHCOOH的浓度变化对CHCl₃的吸附效果影响不大，但吸附效果随水体中CHBrCl₂浓度的升高而降低。     

Assessing the nucleophilic character of 2-amino-4-arylthiazoles through coupling with 4,6-dinitrobenzofuroxan: Experimental and theoretical approaches based on structure-reactivity relationships

A kinetic study of the reactions of potentially bioactive 2-amino-4-arylthiazoles with highly reactive 4,6-dinitrobenzofuroxan (DNBF) is reported herein in acetonitrile solution. The complexation reaction was followed by recording the UV–vis spectra with time at λ_max = 482 nm. Electronic effects of substituents influencing the rate of reaction have been studied using structure-reactivity relationships. It is shown that the Hammett plot relative to the reaction of DNBF with 2-amino-4-(4-chlorophenyl)thiazole exhibit positive deviation from the log k₁ versus σ correlation, while it showed excellent linear correlation in terms of Yukawa–Tsuno equation. It has be noticed that the nonlinear Hammett plot observed for 2-amino-4-(4-chlorophenyl) thiazole is not attributed to a change in rate-determining step but is due to nature of electronic effect of substituent caused by the resonance of stabilization of substrates. The second-order rate constant (k₁) relating to the bond C–C and C-N forming step of the complexation processes of DNBF with 4-substituted-aminothiazoles and 2-amino-5-methyl-4-phenylthiazole, respectively, is fit into the linear relationship log k = s_N (N + E), thereby permitting the assessment of the nucleophilicity parameter (N) of the 2-amino-4-arylthiazoles of the range (4.90 < N < 6.85). 2-amino-4-arylthiazoles is subsequently ranked by positioning its reactivity on the general nucleophilicity scale developed recently by Mayr and coworkers (2003) leading an interesting and a direct comparison over a large domain of π-, σ -, and n-nucleophiles. The global electrophilicity/nucleophilicity reactivity indexes of the 2-amino-4-arylthiazoles have been investigated by means of a density functional theory (DFT) method. .     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.