| 单层n型MoS2/p型c-Si异质结太阳电池数值模拟 |
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| 引用本文： | 陈云,蔡厚道.单层n型MoS2/p型c-Si异质结太阳电池数值模拟[J].人工晶体学报,2020,49(12):2287-2291. |
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| 作者姓名： | 陈云 蔡厚道 |
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| 作者单位： | 江西科技学院智能工程学院,南昌 330098;江西科技学院智能工程学院,南昌 330098 |
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| 基金项目： | 江西省教育厅科学技术研究项目(GJJ180974) |
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| 摘 要： | 单层二硫化钼(MoS2)是一种具有优异光电性能的半导体材料,在太阳能能量转换中表现出很大的应用潜力。本文基于AMPS模拟软件,对单层n型MoS2/p型c-Si异质结太阳电池进行了数值模拟与分析。通过模拟优化,n型MoS2的电子亲和能为3.75 eV、掺杂浓度为1018 cm-3,p型c-Si的掺杂浓度为1017 cm-3时,太阳电池能够取得最高22.1%的转换效率。最后模拟了n型MoS2/p型c-Si异质结界面处的界面态对太阳电池性能的影响,发现界面态密度超过1011 cm-2·eV-1时会严重影响太阳电池的光伏性能。
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| 关 键 词： | 二硫化钼 c-Si 异质结太阳电池 转换效率 二维材料 数值模拟 |
Numerical Simulation of Monolayer n-Type MoS2/p-Type c-Si Heterojunction Solar Cells |
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| CHEN Yun,CAI Houdao.Numerical Simulation of Monolayer n-Type MoS2/p-Type c-Si Heterojunction Solar Cells[J].Journal of Synthetic Crystals,2020,49(12):2287-2291. |
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| Authors: | CHEN Yun CAI Houdao |
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| Affiliation: | School of Intelligent Engineering, Jiangxi University of Technology, Nanchang 330098, China |
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| Abstract: | Monolayer MoS2 is a promising semiconductor material for solar energy conversion application because of its excellent optoelectronic properties. In this study, monolayer n-type MoS2/p-type c-Si heterojunction solar cell was proposed and simulated using AMPS software. The different factors influenced the photovoltaic performance of the solar cell were studied. The simulation results show that the solar cell can achieve the highest conversion efficiency of 22.1% with the electron affinity of n-type MoS2 is 3.75 eV, the doping concentration of n-type MoS2 is 1018 cm-3, and the doping concentration of p-type c-Si is 1017 cm-3. Finally, the influence of interface states at the n-type MoS2/p-type c-Si heterointerface on the overall performance of solar cell is simulated. It is found that the interface state density over 1011 cm-2·eV-1 will seriously affect the photovoltaic performance of solar cell. |
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| Keywords: | MoS2 c-Si heterojunction solar cell conversion efficiency two-dimensional material numerical simulation |
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