Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Yb:FAP和Yb:C3S2-FAP晶体光谱的温度特性和选择激发

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Exact Solution of an Extended Hubbard Model with Electron—Lattice Interaction for an Organic Ferromagnetic Polymer

Using an exact diagonalization method,we study an extended Hubbard model with an electron-lattice interaction for an organic ferromagnetic chain with radical coupling.The result shows that the ferromagnetic ground state originates from the antiferromagnetic correlation between adjoining sites,which is enhanced by the on-site e-e repulsion.The intersite e-e repulsion induces the inhomogeneous distribution of the charge density.The dimerization is decreased by the e-e interaction and the radical coupling.The electron-lattice interaction and the radical coupling can transfer the spin density and charge density between the main chain and the radicals.     

Energy Distribution in the SU（1,1）Coherent State of Hydrogen

We Construct and SU(1,1)coherent state for hydrogen,we discuss its properties,and we give the energy distribution law of the atom.The coherent state may be used to describe the atomic states of the discrete spectrum.     

Analysis of X（1576） as a Tetraquark State with the QCD Sum Rules

We take the viewpoint that X（1576） is the tetraquark state which consists of a scalar diquark and an antiscalar-diquark in relative P-wave, and calculate its mass in the framework of the QCD sum rule approach. The numerical value of the mass mx= （1.66 =k 0.14） GeV is consistent with the experimental data. There might be some tetraquark components in the vector meson X（1576）.     

阴极还原处理对多孔硅发光性能的影响

对经过阴极还原处理后的多孔硅样片进行了光致发光测试和稳定性测试.实验结果表明这种处理能明显改善多孔硅的发光稳定性,使其表面结构更加稳定.利用原子力显微镜对不同还原时间的多孔硅微结构及形貌进行了比较,在一定范围内随着还原时间的增长多孔硅表面粗糙度增大,PL谱增强.     

第一届掺杂纳米材料发光性质学术会议

该会议为中国物理学会发光分会、中国稀土学会发光专业委员主办的国内首次纳米材料发光性质专题学术研讨会，旨在通过大会报告、专题研讨等活动，总结、交流近年来掺杂纳米发光材料及其相关应用领域所取得的研究进展和成果。在此基础上凝练科学目标、探讨和规划未来的学科发展方向并集中国内的优势资源攻克难点的科学问题，使我国在该研究领域更具国际竞争力。会议诚邀请该领域知名的专家和学者参加；在探索纳米世界之余，也将带您领略海南美丽而独特的自然景观和人文奇迹。