A Random Number Generator Based on Quantum Entangled Photon Pairs

A new scheme for a random number generator based on quantum entangled photon pairs is demonstrated.Signal photons produced by optical parametric down-conversion are detected at two single-photon detectors after transmission or reflection at a 50/50% beamsplitter, to form a truly random binary sequence. Their arrival is signalled by their twin idler photons, so that a cw laser source may be used instead of attenuated laser pulses.Coincidence measurement is employed to obtain the bit sequences, which are shown to fully satisfy the standard tests for randomness.     

光合作用研究中国有突破

 关于植物进行光合作用的机理研究,几百年来一直是科学研究的一个重大课题。最近,我国科学家率先独立完成了这一课题的核心问题研究。国际权威科技期刊《自然》以封面和评论文章的形式发表了我国科学家的研究成果。     

用拉曼散射光谱估算纳米Ge晶粒平均尺寸

用射频共溅射技术和真空退火方法制备了埋入ＳｉＯ２基底中的纳米Ｇｅ复合膜（ｎｃ－Ｇｅ／ＳｉＯ２）测量了不同温度退火后该复合膜的拉曼散射光谱，其结果与晶体Ｇｅ的拉曼谱相比，纳米Ｇｅ的拉曼峰红移峰形变宽，用拉曼谱的参数计算了纳米Ｇｅ晶粒的平均尺寸，所得结果与声子限域理论模型符合。     

Correlation Between the IR Transmission Spectra and the CdZnTe Qualities

Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified quaJities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm^-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm^-1. The reasons of the above results are attempted to be given.     

纳米电子学研究进展

 一、跨世纪的新学科--纳米科技 原子是组成自然界的基本单位,原子的不同方式排列使自然界多姿多彩。纳米科技是在0.1-100纳米(1纳米=10^-9米)尺度上研究和利用原子与分子的结构、特征及其相互作用的高新科技。它的诞生使人类改造自然的能力延伸到分子和原子。它的最终目标是直接以分子、原子在纳米尺度上制造具有特定功能的产品,实现生产方式的飞跃。因此,这一兴起于本世纪90年代的纳米科学技术,必将雄踞于21世纪,对人类产生重大而深远的影响。     

H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响

以SiH4,Ar和H2为反应气体,采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜.实验发现,反应气体中H2的比例是影响薄膜结晶质量的重要因素,在适量的H2比例下制备的多晶Si薄膜具有结晶相体积分数高,氢含量低,生长速率快、抗杂质污染等特性.     

单光子探测器量子效率的自绝对标定

单光子探测器日益广泛地应用于科学研究的各个领域，精确地标定其量子效率成为应用的先决条件。我们首次实现了单光子探测器量子效率自绝对标定的原理性实验，即只利用待测探测器本身就可以对其量子效率进行绝对标定，而不需要第二个探测器或任何参考标准。该方法基于自发参量下转换产生的纠缠光子对的时间关联性，在信号光子和闲散光子之间引入延时，由单光子计数率和符合计数率测得探测器的量子效率。     

Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.     

Research on CeO2 cap layer for YBCO-coated conductor

Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition （PLD） under the same conditions have been studied. Of them, one group is of CeO2 films, which are deposited on stainless steel （SS） tapes coated by IBAD-YSZ （IBAD-YSZ/SS）, and the other group is of CeO2/YSZ/Y2O3 multilayers, which are deposited on NiW substrates by PLD for the fabrication of YBCO-coated conductor through the RABiTS approach. YBCO film is then deposited on the tops of both types of buffer layers by PLD. The effects of the thickness of the CeO2 film on the texture of the CeO2 film and the critical current density （Jc） of the YBCO film are analysed. For the case of CeO2 film on IBAD-YSZ/SS, there appears a self-epitaxy effect with increasing thickness of the CeO2 film. For CeO2/YSZ/Y2O3/NiW, in which the buffer layers are deposited by PLD, there occurs no self-epitaxy effect, and the optimal thickness of CeO2 is about 50 nm. The surface morphologies of the two groups of samples are examined by SEM.     

一类新的贵金属显色剂——若丹宁偶氮同系物

若丹宁偶氮同系物是七十年代发展起来的一类新光度显色试剂。这类试剂与贵金属离子的显色反应具有很高的灵敏度和选择性。到目前为止,Саввин等人已发表了20余篇关于这类试剂的合成、性质和分析应用方面的研究报导。已研究过的这类化合物有:若丹宁偶氮化合物、硫代若丹宁偶氮化合物、3-取代若丹宁偶氮化合物和硫代丙酰若丹宁偶氮化合物。它们的结构通式如下:A.若丹宁偶氮化合物