Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition |
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作者姓名: | 栗军帅 王金晓 尹旻 高平奇 贺德衍 |
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作者单位: | Department of Physics, Lanzhou University, Lanzhou 730000 |
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基金项目: | Supported by the National Natural Science Foundation of China under Grant No 10175030, and the Natural Science Foundation of Gansu Province under Grant No 4WS035-A72-134. |
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摘 要: | Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit (〈0.01 at.%) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.
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关 键 词: | 多晶硅膜 电感耦合等离子体化学气相淀积 Al诱导晶化 结晶生长 CVD |
收稿时间: | 2006-07-27 |
修稿时间: | 2006-07-27 |
Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition |
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Institution: | Department of Physics, Lanzhou University, Lanzhou 730000 |
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Abstract: | Polycrystalline Si (poly-Si) films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350°C. Compared to the traditional annealing crystallization of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of Al atoms are detected in Si layer within the limit (<0.01 at.%) of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures. |
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Keywords: | 72 80 Jc 52 80 Yr |
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