贵金属纳米颗粒在玻碳电极上的层层组装

采用表面活性剂二辛酯琥珀酸磺酸钠(AOT, sodiumbis(2-ethylhexyl)sulfosuccinate)微乳法可以制备得到各种贵金属纳米颗粒(包括银、金、铂以及钯),其性质利用紫外-可见吸收光谱、透射电镜、X-射线衍射、傅立叶变换红外光谱以及Zeta电位分析进行了表征。通过层层自组装方法,将带有负电荷的Pt纳米颗粒和聚阳离子(聚烯丙基氯化铵, PAH)自组装到玻碳电极上,并研究了该修饰电极对甲醇的电催化氧化性质。     

退火对溶胶-凝胶法制备的ZnO薄膜结构和光致发光的影响

采用溶胶-凝胶法在n-Si(100)衬底上制备ZnO薄膜并从三个方面对其研究。X射线衍射结果表明,在含氧气氛中退火的ZnO薄膜为多晶六角纤锌矿结构,有明显的c轴择优结晶取向;退火时间的长短和温度的高低对结晶取向性和粒径均有较大影响,通过进一步的研究发现最佳处理温度在500℃左右。用扫描电子显微镜观察样品的表面和侧面形貌,晶体的生长比较均匀,粒径平均在70~160nm范围内,与XRD测量结果相一致。室温下ZnO胶体的光致发光谱表明,随着胶体老化时间的延长,胶体的紫外峰位发生了蓝移。室温下ZnO薄膜的光致发光谱表明,紫外部分的发光峰位在365,390nm,发光强度较强;在可见光区的发光强度相对较弱,但是还没有被氧完全抑制掉。     

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [11\overline 2 0] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580~°C and 10⁴~Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10¹⁴~cm^-3 obtained by c--V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.     

偶极随钻声波测井声压和径向位移响应的差异*

声波测井仪接收到的电信号通常是多个压电片响应的叠加,它主要是由声压还是径向位移响应转化而来,或是两种响应兼有目前未有定论。该文通过实轴积分法和复变函数法计算并对比分析随钻声波测井的声压和径向位移场,发现这两种响应特性有着显著的差异。首先,软地层的偶极随钻测井时,声压信号包含钻铤波和舒尔特波两个波群,而径向位移信号仅有钻铤波波群;其次,单极声源情况下,声压和径向位移信号的钻铤波能量分别集中在钻铤内、外壁,而偶极情况恰好相反,可见,钻铤按照单极情况的分析结果进行刻槽后,高频时的拖尾现象会影响偶极信号中舒尔特波对横波速度的反演。因此,阐明两类信号的差异对横波速度的反演和钻铤波的压制都具有重要意义。     

Threshold resistance switching in silicon-rich SiO_x thin films

Si-rich SiO_x and amorphous Si clusters embedded in SiO_x films were prepared by the radio-frequency magnetron cosputtering method and high-temperature annealing treatment.The threshold resistance switching behavior was achieved from the memory mode by continuous bias sweeping in all films,which was caused by the formation of clusters due to the local overheating under a large electric field.Besides,the Ⅰ-Ⅴ characteristics of the threshold switching showed a dependence on the annealing temperature and the SiO_x thickness.In particular,formation and rupture of conduction paths is considered to be the switching mechanism for the 39 nm-SiO_x film,while for the 78 nm-SiO_x film,adjusting of the Schottky barrier height between insulator and semiconductor is more reasonable.This study demonstrates the importance of investigation of both switching modes in resistance random access memory.     

近红外光谱技术用于复杂植物样品中无机离子测定的新方法

植物样品中的无机离子以一定形式与具有近红外吸收的有机基团结合, 因而可以借助近红外光谱技术测定其含量。对烟草样品近红外光谱数据及其小波变换处理后的小波系数,采用偏最小二乘法预测其中钾离子的含量,建立了小波变换与近红外光谱技术结合用于复杂植物样品中无机离子测定的新方法。结果表明：近红外光谱数据压缩为原始大小的3.3%,基本上没有光谱信息的丢失; 基于小波系数的模型优于传统的全谱模型,对于无机离子的测定可以取得较为准确的预测结果。     

低浓度多元糖混合水溶液体系的近红外分析

利用近红外光谱分析了葡萄糖、果糖、单糖和蔗糖的二元以及三元混合溶液。水在近红外区域的吸收十分强烈,近红外光谱分析更多应用于干燥的或者低水分的样品,而不适用于新鲜的果蔬样品。文章试图将近红外用于水溶液体系的分析,在不回避水的强干扰因素的情况下,探讨如何改进分析手段,优化分析结果。实验中样品浓度分布在0.01～0.25 mol·L-1的范围。对于物理化学性质都比较接近的低浓度单糖溶液,通过比较它们在不同组分中的近红外谱图,特别是C—H,O—H等基团的近红外吸收在不同条件下的变化,以及选择不同波数区间或者全谱建立分析模型对于分析结果的影响,优化波数区间的选择,结合化学计量学优化计算,以获得质量较高的校正模型,改善分析结果,克服水的影响。