Singlet-Triplet Transition in Quantum Dots Confined by Triangular and Bowl-Like Potentials： the Effect of Electric Fields

We theoretically investigate the energy spectra of two-electron two-dimensional （2e 2D） quantum dots （QDs） confined by triangular potentials and bowl-like potentials in a magnetic field by exact diagonalization in the framework of effective mass theory. An in-plane electric field is found to contribute to the singlet-triplet transition of the ground state of the 2e 2D QDs confined by triangular or bowl-like potentials in a perpendicular magnetic field. The stronger the in-plane electric field, the smaller the magnetic field for the total spin of the ground states in the dot systems to change from S = 0 to S = 1. However, the influence of an in-plane electric field on the singlettriplet transition of the ground state of two electrons in a triangular QD modulated by a perpendicular magnetic field is quite small because the triangular potential just deviates from the harmonic potential well slightly. We find that the strength of the perpendicular magnetic field needed for the spin singlet-triplet transition of the ground state of the QD confined by a bowl-like potential is reduced drastically by applying an in-plane electric field.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

Luminescent Properties and Mechanism of Gd1-x-yAlO3Eux,REy

GAP:Eu,Re(Gd1-x-yAlO3Eux,REy?A，RE=Pr or Ce) powders were prepared by a nitrate-citrate process. It is found that luminescent intensity decreases when GAP:Eu is co-doped with Pr or Ce. The phenomena of spectra prove that there is a resonant energy transfer between Eu and Pr, by the absorption and emission of lower-energy phonon, and also Ce sensitizer decreases the activator energy level from host→Eu. The two factors are considered to be the main reasons for decrease of the luminescent intensity for the co-doped GAP:Eu,Re.     

超声Doppler血流信号自回归谱估计研究

本文讨论了自回归(AR)模型用于处理超声Doppler血流信号的情况。实验表明,AR谱估计比FFT周期谱具有分辨率高,随机起伏误差小等优点。     

薄铝埋点等离子体K线光谱半定量诊断

高温等离子体系统中存在等离子体流体力学运动演化过程、离子的离化分布演化动力学过程、高剥离态离子谱发射过程及发射芬光辐射输运过程等，而且高温等离子体系统通常是非平衡系统，所以定量研究高温等离子体系统的发射X光谱和高温等离子体对X光的吸收是一个非常复杂的问题。为了模拟和解释实验测得的激光等离子体发射光谱，提出了一种薄埋点靶：直径为φ200μm厚度为0．1μm的铝点埋在20μm厚的CH膜底衬中，表面再覆盖0．1μm厚CH膜。     

脉冲中子探测系统的中子灵敏度能量响应

为了获得脉冲中子探测系统的中子灵敏度能量响应，编制了适合裂变中子测量探测系统灵敏度能响的一系列专用程序，研究了相应的实验标定技术，采用理论计算和实验验证相结合的方法，对几套探测系统中子灵敏度能量响应进行了研究，初步解决了标定需要的“单能、脉冲、高强度、多个不同能量的中子源”问题，使不确定度大大提高，满足了测量的要求。     

Lifetime Measurements for Electric-Dipole △n=0 Transitions in the Beryllium-Like Sulfur

We have measured lifetimes of △n=0 allowed transitions in beryllium-like sulfur using beam foil spectroscopic techniques. The measured values, derived from analysis of arbitrarily normalized decay curves, are presented and compared with theoretical calculations and previous measurements. Accurate probabilities have been determined by the well-known relationship.     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.